CQY36N

CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors 94 8638 • Package matches with detector BPW16N • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr)  (deg) P (nm) tr (ns) 1.5 ± 55 950 800 CQY36N Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE CQY36N PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 V Forward current IF 100 mA tp  100 μs Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number: 81001 Rev. 1.8, 16-May-11 UNIT IFSM 2 A PV 160 mW Tj 100 °C Tamb - 25 to + 85 °C °C Tstg - 25 to + 100 t3s Tsd 245 °C leads not soldered RthJA 450 K/W For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 450 K/W 80 60 40 100 80 60 RthJA = 450 K/W 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21319 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21320 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage SYMBOL MIN. TYP. MAX. 1.6 IF = 50 mA, tp  20 ms VF 1.3 IF = 100 mA TKVF - 1.3 Temperature coefficient of VF Breakdown voltage UNIT V mV/K IR = 100 μA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 50 mA, tp  20 ms Ie Radiant power IF = 50 mA, tp  20 ms e 10 mW IF = 50 mA TKe - 0.8 %/K  ± 55 deg Junction capacitance Temperature coefficient of e Angle of half intensity 5 μA 50 0.7 pF 1.5 2.1 mW/sr Peak wavelength IF = 50 mA p 950 nm Spectral bandwidth IF = 50 mA  50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp 10 μs tr 400 ns d 1.2 mm Rise time Virtual source diameter BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (mA) 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 IF = 10 mA 1.0 0.9 0.8 0.7 0 1 2 3 4 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage www.vishay.com 2 1.1 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature For technical questions, contact: emittertechsupport@vishay.com Document Number: 81001 Rev. 1.8, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.25 Φe rel - Relative Radiant Power 100 I e – Radiant Intensity (mW/sr) Vishay Semiconductors 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 100 101 102 103 I F – Forward Current (mA) 94 7917 0 900 104 94 7994 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel – Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 1000 I F - Forward Current (mA) 13718 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7919 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81001 Rev. 1.8, 16-May-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-5053.01-4 Issue: 1; 01.07.96 96 12189 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81001 Rev. 1.8, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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