CQY80N, CQY80NG
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
B
6
1
C
5
2
E
4
3
A (+) C (-) NC
• Isolation materials according to UL94-VO
• Pollution degree
IEC 60664)
2
(DIN/VDE
0110/resp.
• Special construction: therefore, extra low
coupling capacity of typical 0.3 pF, high common
mode rejection
• Low temperature coefficient of CTR
• Climatic classification 55/100/21 (IEC 60068 part 1)
V
D E
18537_5
17201_4
DESCRIPTION
The CQY80N(G) series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
6 pin plastic dual inline package.
• Rated
impulse
VIOTM = 6 kV peak
voltage
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated
isolation
VIOWM = 600 VRMS
voltage
(RMS
• Rated
recurring
peak
VIORM = 600 VRMS (848 V peak)
includes
voltage
DC)
(repetitive)
AGENCY APPROVALS
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI = 275
• UL1577, file no. E52744, double protection
• Thickness through insulation ≥ 0.75 mm
• BSI: BS EN 41003, BS EN 60065, BS EN 60950
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
and
in
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)
ORDER INFORMATION
PART
REMARKS
CQY80N
CTR > 50 %, DIP-6
CQY80NG
CTR > 50 %, DIP-6
Note
G = leadform 10.16 mm; G is not marked on the body.
Document Number: 83533
Rev. 1.9, 13-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
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263
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Pdiss
70
mW
Tj
125
°C
IFSM
1.5
A
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
mA
Power dissipation
Junction temperature
tp ≤ 10 µs
Forward surge current
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
IC
50
ICM
100
mA
Pdiss
70
mW
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
t = 1 min
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
2 mm from case, t ≤ 10 s
Soldering temperature (2)
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
IF = 50 mA
VF
1.25
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
VCE = 20 V, IF = 0 A,
E=0
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.3
pF
Forward voltage
Junction capacitance
V
pF
OUTPUT
Collector emitter leakage current
10
200
nA
0.3
V
COUPLER
Coupling capacitance
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
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264
TEST CONDITION
SYMBOL
MIN.
TYP.
VCE = 5 V, IF = 10 mA
CTR
50
90
For technical questions, contact: optocoupleranswers@vishay.com
MAX.
UNIT
%
Document Number: 83533
Rev. 1.9, 13-Oct-09
CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
130
mA
Pdiss
265
mW
VIOTM
6
kV
Tsi
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
6
kV
Vpd
1.3
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
Ptot - Total Power Dissipation (mW)
Insulation resistance
275
TYP.
MAX.
UNIT
VIOTM
250
225
t1, t2
t3 , t4
ttest
tstres
Psi (mW)
200
175
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
150
125
100
VIOWM
VIORM
Isi (mA)
75
50
25
0
0
0
95 10923
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
175
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 1 - Derating Diagram
Document Number: 83533
Rev. 1.9, 13-Oct-09
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC 60747
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265
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
MIN.
TYP.
MAX.
UNIT
td
4
µs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
tr
7
µs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
tf
6.7
µs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
ts
0.3
µs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
ton
11
µs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω,
(see figure 3)
toff
7
µs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
ton
25
µs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
toff
42.5
µs
IF
0
IF
IF
0
+5V
IC = 5 mA; Adjusted through
input amplitude
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50 Ω
100 Ω
tr
Oscilloscope
RL ≥ 1 MΩ
CL ≥ 20 pF
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
10 %
0
14943
0
tp
IC
td
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
IF
IC
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50
Oscilloscope
RL 1 M
CL 20 pF
1k
14944
Fig. 4 - Test Circuit, Saturated Operation
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83533
Rev. 1.9, 13-Oct-09
CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
TYPICAL CHARACTERISTICS
Ptot - Total Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
300
ICEO - Collector Dark Current,
with Open Base (nA)
10 000
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
100
10
1
0
40
80
100
10
1
0.1
0.4
0.8
1.2
1.6
Fig. 7 - Forward Current vs. Forward Voltage
VS = 5 V
0.1
0.01
0.001
1
Fig. 10 - Collector Base Current vs. Forward Current
100
VCE = 5 V
IF = 10 mA
IC - Collector Current (mA)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
96 11920
100
10
IF - Forward Current (mA)
95 11052
1.5
1.4
100
75
1
2.0
VF - Forward Voltage (V)
50
Fig. 9 - Collector Dark Current vs. Ambient Temperature
ICB- Collector Base Current (mA)
1000
0
25
Tamb - Ambient Temperature (°C)
95 11026
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
IF - Forward Current (mA)
0
120
Tamb - Ambient Temperature (°C)
96 11700
CTRrel - Relative Current Transfer Ratio
1000
0
96 11862
VCE = 20 V
IF = 0
Tamb - Ambient Temperature (°C)
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
Document Number: 83533
Rev. 1.9, 13-Oct-09
VCE = 5 V
10
1
0.1
0.01
0.1
95 11053
1
100
10
IF - Forward Current (mA)
Fig. 11 - Collector Current vs. Forward Current
For technical questions, contact: optocoupleranswers@vishay.com
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267
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CTR - Current Transfer Ratio (%)
IC - Collector Current (mA)
100
20 mA
IF = 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
1
0.8
0.6
CTR = 50 % used
0.4
0.2
20 % used
10 % used
95 11055
IC - Collector Current (mA)
800
600
400
200
95 11056
10
100
IC - Collector Current (mA)
Fig. 14 - DC Current Gain vs. Collector Current
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268
100
10
Fig. 15 - Current Transfer Ratio vs. Forward Current
50
toff
40
30
ton
20
Saturated operation
VS = 5 V
RL = 1 kΩ
10
0
0
5
10
20
15
IF - Forward Current (mA)
Fig. 16 - Turn-on/off Time vs. Forward Current
ton/toff - Turn-on/Turn-off Time (µs)
hFE - DC Current Gain
VCE = 5 V
1
1
IF - Forward Current (mA)
95 11017
1000
0.1
1
100
10
Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current
0
0.01
10
0.1
ton/toff - Turn-on/Turn-off Time (µs)
VCEsat - Collector Emitter
Saturation Voltage (V)
1.0
1
100
95 11057
Fig. 12 - Collector Current vs. Collector Emitter Voltage
0
VCE = 5 V
100
10
VCE - Collector Emitter Voltage (V)
95 11054
1000
20
Non-saturated
operation
VS = 5 V
RL = 100 Ω
ton
15
toff
10
5
0
0
95 11016
2
4
6
8
10
IC - Collector Current (mA)
Fig. 17 - Turn-on/off Time vs. Collector Current
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83533
Rev. 1.9, 13-Oct-09
CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
PACKAGE DIMENSIONS in millimeters
DIP-6
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
2.8 ± 0.5
0.5 ± 0.1
0.25
1.2 ± 0.1
6
14771_2
4.5 ± 0.3
4.5 ± 0.3
5
4
7.62 to 9.5 typ.
1 2 3
DIP-6, 400 mil
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
0.5 ± 0.1
1.2 ± 0.1
4.5 ± 0.3
2.8 ± 0.5
4.5 ± 0.3
0.25
10.16 (typ.)
6
14771_1
5
4
1 2 3
PACKAGE MARKING
CQY80N
V YWW 24
21764-28
Document Number: 83533
Rev. 1.9, 13-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
269
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Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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