CQY80NG

CQY80N, CQY80NG Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 1 C 5 2 E 4 3 A (+) C (-) NC • Isolation materials according to UL94-VO • Pollution degree IEC 60664) 2 (DIN/VDE 0110/resp. • Special construction: therefore, extra low coupling capacity of typical 0.3 pF, high common mode rejection • Low temperature coefficient of CTR • Climatic classification 55/100/21 (IEC 60068 part 1) V D E 18537_5 17201_4 DESCRIPTION The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. • Rated impulse VIOTM = 6 kV peak voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation VIOWM = 600 VRMS voltage (RMS • Rated recurring peak VIORM = 600 VRMS (848 V peak) includes voltage DC) (repetitive) AGENCY APPROVALS • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI = 275 • UL1577, file no. E52744, double protection • Thickness through insulation ≥ 0.75 mm • BSI: BS EN 41003, BS EN 60065, BS EN 60950 • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC • DIN EN 60747-5-5 (VDE 0884) • FIMKO (SETI): EN 60950, certificate no. FI25155 and in APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884) ORDER INFORMATION PART REMARKS CQY80N CTR > 50 %, DIP-6 CQY80NG CTR > 50 %, DIP-6 Note G = leadform 10.16 mm; G is not marked on the body. Document Number: 83533 Rev. 1.9, 13-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 263 CQY80N, CQY80NG Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA Pdiss 70 mW Tj 125 °C IFSM 1.5 A Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature tp ≤ 10 µs Forward surge current OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 70 mW Tj 125 °C COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation t = 1 min Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C 2 mm from case, t ≤ 10 s Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT IF = 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0 A, E=0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Forward voltage Junction capacitance V pF OUTPUT Collector emitter leakage current 10 200 nA 0.3 V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF www.vishay.com 264 TEST CONDITION SYMBOL MIN. TYP. VCE = 5 V, IF = 10 mA CTR 50 90 For technical questions, contact: optocoupleranswers@vishay.com MAX. UNIT % Document Number: 83533 Rev. 1.9, 13-Oct-09 CQY80N, CQY80NG Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Ptot - Total Power Dissipation (mW) Insulation resistance 275 TYP. MAX. UNIT VIOTM 250 225 t1, t2 t3 , t4 ttest tstres Psi (mW) 200 175 = 1 to 10 s =1s = 10 s = 12 s VPd 150 125 100 VIOWM VIORM Isi (mA) 75 50 25 0 0 0 95 10923 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) 175 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 1 - Derating Diagram Document Number: 83533 Rev. 1.9, 13-Oct-09 Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC 60747 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 265 CQY80N, CQY80NG Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) MIN. TYP. MAX. UNIT td 4 µs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr 7 µs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf 6.7 µs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton 11 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff 7 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 µs IF 0 IF IF 0 +5V IC = 5 mA; Adjusted through input amplitude RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 100 Ω tr Oscilloscope RL ≥ 1 MΩ CL ≥ 20 pF Fig. 3 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 14943 0 tp IC td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V IF IC RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 Oscilloscope RL 1 M CL 20 pF 1k 14944 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 266 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83533 Rev. 1.9, 13-Oct-09 CQY80N, CQY80NG Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection TYPICAL CHARACTERISTICS Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 300 ICEO - Collector Dark Current, with Open Base (nA) 10 000 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 100 10 1 0 40 80 100 10 1 0.1 0.4 0.8 1.2 1.6 Fig. 7 - Forward Current vs. Forward Voltage VS = 5 V 0.1 0.01 0.001 1 Fig. 10 - Collector Base Current vs. Forward Current 100 VCE = 5 V IF = 10 mA IC - Collector Current (mA) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 96 11920 100 10 IF - Forward Current (mA) 95 11052 1.5 1.4 100 75 1 2.0 VF - Forward Voltage (V) 50 Fig. 9 - Collector Dark Current vs. Ambient Temperature ICB- Collector Base Current (mA) 1000 0 25 Tamb - Ambient Temperature (°C) 95 11026 Fig. 6 - Total Power Dissipation vs. Ambient Temperature IF - Forward Current (mA) 0 120 Tamb - Ambient Temperature (°C) 96 11700 CTRrel - Relative Current Transfer Ratio 1000 0 96 11862 VCE = 20 V IF = 0 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83533 Rev. 1.9, 13-Oct-09 VCE = 5 V 10 1 0.1 0.01 0.1 95 11053 1 100 10 IF - Forward Current (mA) Fig. 11 - Collector Current vs. Forward Current For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 267 CQY80N, CQY80NG Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection CTR - Current Transfer Ratio (%) IC - Collector Current (mA) 100 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 1 0.8 0.6 CTR = 50 % used 0.4 0.2 20 % used 10 % used 95 11055 IC - Collector Current (mA) 800 600 400 200 95 11056 10 100 IC - Collector Current (mA) Fig. 14 - DC Current Gain vs. Collector Current www.vishay.com 268 100 10 Fig. 15 - Current Transfer Ratio vs. Forward Current 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 5 10 20 15 IF - Forward Current (mA) Fig. 16 - Turn-on/off Time vs. Forward Current ton/toff - Turn-on/Turn-off Time (µs) hFE - DC Current Gain VCE = 5 V 1 1 IF - Forward Current (mA) 95 11017 1000 0.1 1 100 10 Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current 0 0.01 10 0.1 ton/toff - Turn-on/Turn-off Time (µs) VCEsat - Collector Emitter Saturation Voltage (V) 1.0 1 100 95 11057 Fig. 12 - Collector Current vs. Collector Emitter Voltage 0 VCE = 5 V 100 10 VCE - Collector Emitter Voltage (V) 95 11054 1000 20 Non-saturated operation VS = 5 V RL = 100 Ω ton 15 toff 10 5 0 0 95 11016 2 4 6 8 10 IC - Collector Current (mA) Fig. 17 - Turn-on/off Time vs. Collector Current For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83533 Rev. 1.9, 13-Oct-09 CQY80N, CQY80NG Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection PACKAGE DIMENSIONS in millimeters DIP-6 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 2.8 ± 0.5 0.5 ± 0.1 0.25 1.2 ± 0.1 6 14771_2 4.5 ± 0.3 4.5 ± 0.3 5 4 7.62 to 9.5 typ. 1 2 3 DIP-6, 400 mil 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 0.5 ± 0.1 1.2 ± 0.1 4.5 ± 0.3 2.8 ± 0.5 4.5 ± 0.3 0.25 10.16 (typ.) 6 14771_1 5 4 1 2 3 PACKAGE MARKING CQY80N V YWW 24 21764-28 Document Number: 83533 Rev. 1.9, 13-Oct-09 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 269 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1