CS2K-E3/I

End of Life "August 2021" - Alternative Device "S2D - S2M-E3" CS2D, CS2G, CS2J, CS2K, CS2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) DESIGN SUPPORT TOOLS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started TYPICAL APPLICATIONS Models For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Available PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 5.0 μA VF at IF = 2.0 A (TA = 125 °C) 0.90 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configuration Single Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM CS2D CS2G CS2J CS2K CS2M D G J K M 200 400 600 800 1000 UNIT V IF(AV) (1) 1.6 IF(AV) (2) 2.0 IFSM 50 A TJ, TSTG -55 to +150 °C A Notes (1) Free air, mounted on recommended copper pad area (2) Mounted on 8 mm x 8 mm copper pad areas Revision: 01-Mar-2021 Document Number: 87636 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device "S2D - S2M-E3" CS2D, CS2G, CS2J, CS2K, CS2M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Maximum instantaneous forward voltage IF = 2.0 A IF = 1.0 A IF = 2.0 A SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C Maximum DC reverse current at rated DC blocking voltage Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance 4.0 V, 1 MHz MAX. 0.92 - 0.99 1.2 0.81 - 0.90 0.98 UNIT V - 5.0 - 350 trr 2.1 - μs CJ 12 - pF IR (2) TA = 125 °C TYP. μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance CS2D CS2G CS2J RθJA (1) 97 RθJM (2) 20 CS2K CS2M UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R θJA - junction-to-ambient (2) Mounted on 8 mm x 8 mm copper pad areas, R θJM - junction-to-mount at the terminal ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 I 3200 13" diameter plastic tape and reel CS2J-E3/I 2.4 2.4 D = 0.5 D = 0.3 2.2 2.0 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.8 1.6 1.4 1.2 RthJA =97 ƱC/W 1.0 0.8 0.6 0.4 RthJM = 20 ƱC/W, mounted on 8 mm x 8 mm copper pad areas 0.2 2.0 D = 0.8 D = 0.2 1.6 D = 1.0 D = 0.1 1.2 0.8 T 0.4 D = tp/T tp 0.0 0 0 25 50 75 100 125 150 Mount Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Average Forward Current (A) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 01-Mar-2021 Document Number: 87636 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device "S2D - S2M-E3" CS2D, CS2G, CS2J, CS2K, CS2M www.vishay.com Vishay General Semiconductor 100 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 175 °C TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = -40 °C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.8 1 Instantaneous Forward Voltage (V) TJ = 150 °C 100 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0.001 TJ = -40 °C 0.0001 10 20 30 40 50 60 70 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 TJ = 125 °C 80 90 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 10 10 100 1000 Junction to Ambient 100 10 1 0.01 0.1 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 1 10 100 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 01-Mar-2021 Document Number: 87636 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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