End of Life "August 2021" - Alternative Device "S3D - S3M-E3"
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
Surface-Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
DESIGN SUPPORT TOOLS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
Models
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Available
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
3.0 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
100 A
IR
5.0 μA
VF at IF = 3.0 A (TA = 125 °C)
0.85 V
TJ max.
150 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
VRRM
CS3D
CS3G
CS3J
CS3K
CS3M
D
G
J
K
M
200
400
600
800
1000
UNIT
V
IF(AV) (1)
2.0
IF(AV) (2)
3.0
IFSM
100
A
TJ, TSTG
-55 to +150
°C
A
Notes
(1) Free air, mounted on recommended copper pad area
(2) Mounted on 14 mm x 14 mm copper pad areas
Revision: 01-Mar-2021
Document Number: 87637
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life "August 2021" - Alternative Device "S3D - S3M-E3"
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.5 A
Maximum instantaneous forward voltage
SYMBOL
TA = 25 °C
IF = 3.0 A
VF (1)
IF = 1.5 A
TA = 125 °C
IF = 3.0 A
TA = 25 °C
Maximum DC reverse current at rated DC
blocking voltage
Rated VR
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical junction capacitance
4.0 V, 1 MHz
MAX.
0.90
-
0.95
1.2
0.77
-
0.85
1.05
UNIT
V
-
10
-
500
trr
2.8
-
μs
CJ
26
-
pF
IR (2)
TA = 125 °C
TYP.
μA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
CS3D
CS3G
CS3J
RθJA(1)
80
RθJM (2)
13
CS3K
CS3M
UNIT
°C/W
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance R
θJA - junction to ambient
(2) Mounted on 14 mm x 14 mm copper pad areas, R
θJM - junction to mount at the terminal
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.211
I
3500
13" diameter plastic tape and reel
CS3J-E3/I
3.6
3.5
D = 0.8
D = 0.5
D = 0.3
3.2
3.0
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
RthJM = 13 °C/W, mounted on
14 mm x 14 mm copper pad areas
2.5
2.0
1.5
RthJA = 80 °C/W
1.0
0.5
2.8
D = 0.2
D = 1.0
2.4
D = 0.1
2.0
1.6
1.2
T
0.8
0.4
D = tp/T
tp
0.0
0
0
25
50
75
100
125
150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Average Forward Current (A)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 01-Mar-2021
Document Number: 87637
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life "August 2021" - Alternative Device "S3D - S3M-E3"
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
100
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 75 °C
0.1
TJ = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = -40 °C
0.01
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
Instantaneous Forward Voltage (V)
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
TJ = -40 °C
0.001
10
20
30
40
50
60
70
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
1000
TJ = 150 °C
80
90
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
100
100
Junction to Ambient
10
1
0.01
0.1
Percent of Rated Peak Reverse Voltage (%)
1
10
100
1000
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.01)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 01-Mar-2021
Document Number: 87637
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
