DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automated insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
~
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFM
LINKS TO ADDITIONAL RESOURCES
MECHANICAL DATA
3D 3D
Case: DFM
3D Models
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
1A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
50 A
IR
5 μA
VF at IF = 1.0 A
1.1 V
TJ max.
150 °C
Package
DFM
Circuit configuration
Quad
per
Polarity: as marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M
Device marking code
DF005
DF01
DF02
DF04
DF06
DF08
DF10
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
V
Maximum DC blocking voltage
VDC
Maximum average forward output rectified current
at TA = 40 °C
IF(AV)
1.0
A
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
50
A
I2t
10
A2s
TJ, TSTG
-55 to +150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Revision: 03-Sep-2020
Document Number: 88571
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
Maximum reverse current at
rated DC blocking voltage per
diode
Typical junction capacitance
per diode
1.0 A
1.1
VF
TA = 25 °C
V
5.0
IR
TA = 125 °C
4.0 V, 1 MHz
μA
500
CJ
25
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
(1)
DF005M
DF01M
DF02M
DF04M
RJA
40
RJL
15
DF06M
DF08M
DF10M
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
DF06M-E3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.416
45
50
Tube
Revision: 03-Sep-2020
Document Number: 88571
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (µA)
Average Forward Output Current (A)
1.0
60 Hz
Resistive or
Inductive Load
0.5
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
0
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
20
40
60
80
100
120
140 150
0
20
60
40
80
100
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
100
60
TJ = 150 °C
Single Sine-Wave
50
Junction Capacitance (pF)
Average Forward Output Current (A)
10
40
30
20
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1.0 Cycle
1
0
1
10
1
100
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Heating Time (s)
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Revision: 03-Sep-2020
Document Number: 88571
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Revision: 03-Sep-2020
Document Number: 88571
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000