DG180/181/182
Vishay Siliconix
High-Speed Drivers with Dual SPST JFET Switches
FEATURES
BENEFITS
APPLICATIONS
D Constant On-Resistance Over
Entire Analog Range
D Low Leakage
D Low Crosstalk
D Rad Hardness
D
D
D
D
D
D
D
D
D
D
Low Distortion
Eliminates Large Signal Errors
High Precision
High Bandwidth Capability
Fault Protection
Audio Switching
Video Switching
Sample/Hold
Guidance and Control Systems
Aerospace
DESCRIPTION
The DG180/181/182 are precision dual single-pole,
single-throw (SPST) analog switches designed to provide
accurate switching of video and audio signals. This series is
ideally suited for applications requiring a constant
on-resistance over the entire analog range.
on-resistance include audio switching, video switching, and
data acquisition.
To achieve fast and accurate switch performance, each device
comprises four n-channel JFET transistors and a TTL
compatible bipolar driver. In the on state, each switch conducts
current equally well in either direction. In the off condition, the
switches will block up to 20 V peak-to-peak, with feedthrough
of less than –60 dB at 10 MHz.
The major difference in the devices is the on-resistance
(DG180—10 W, DG181—30 W, DG182—75 W). Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
S1
D1
NC
NC
IN1
V+
VL
1
14
2
3
S2
S2
S1
1
14
S2
13
D2
D1
2
13
D2
12
NC
NC
3
12
NC
NC
NC
4
4
11
IN1
5
Flat
Package 11
Top View 10
5
10
IN2
V+
6
9
V–*
9
V–
VL
7
8
VR
8
VR
6
Dual-In-Line
Top View
7
NC
S1
1
9
D1
IN2
2
IN2
IN1
8
3
V+
7
Metal Can
Top View
V–
6
4
Refer to JAN38510 Information, Military Section
D2
10
5
VR
VL
*Common to Substrate and Case
TRUTH TABLE
Logic
Switch
0
1
ON
OFF
Logic “0”
0 v0
0.8
8V
Logic “1” w 2.0
20V
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-1
DG180/181/182
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
–25 to 85_C
85 C
Part Number
10-Pin Metal Can
DG181BA
14-Pin Sidebraze
DG180BP
DG180AA/883, 5962-8767301IA
10-Pin Metal Can
DG181AA/883, JM38510/11101BIA
DG182AA/883, JM38510/11102BIA
DG180AP/883, 5962-8767301CA
–55 to 125_C
14-Pin Sidebraze
DG181AP/883, JM38510/11101BCA
DG182AP/883, JM38510/11102BCA
5962-8767301XA
14-Pin Flat Pack
JM38510/11101BXA
JM38510/11102BXA
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Current (S or D) DG181, DG182 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
VD to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V
VL to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
VR to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V
VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V
Current (S or D) DG180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dissipationa
10-Pin Metal Canb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
14-Pin Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
14-Pin Flat Packd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6 mW/_C above 75_C
c. Derate 11 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
VL
S
IN
D
VR
V–
FIGURE 1.
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4-2
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
DG180/181/182
Vishay Siliconix
SPECIFICATIONSa FOR DG180
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 Vf
Tempb
Typc
A Suffix
B Suffix
–55 to 125_C
–25 to 85_C
Mind
Maxd
Mind
Maxd
Unit
–7.5
15
–7.5
15
V
W
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Full
IS = –10 mA, VD = –7.5 V
Room
Full
7.5
10
20
15
25
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.05
10
1000
15
300
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.05
10
1000
15
300
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.04
10
1000
15
300
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.03
10
1000
15
300
Source Off
Leakage Current
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "7.5 V
Room
Hot
–0.1
Saturation Drain Current
IDSS
2 ms Pulse Duration
Room
300
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
55
Room
0.6
Room
–2.7
Room
3
Room
–1
f = 1 MHz
f = 1 MHz, RL = 75 W
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
IL
Reference Supply Current
IR
VIN = 0 V
V, or 5 V
1.5
–5
1.5
–5
mA
4.5
–2
4.5
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-3
DG180/181/182
Vishay Siliconix
SPECIFICATIONSa FOR DG181
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 Vf
Tempb
Typc
A Suffix
B Suffix
–55 to 125_C
–25 to 85_C
Mind
Maxd
Mind
Maxd
Unit
–7.5
15
–7.5
15
V
W
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Source Off
Leakage Current
VANALOG
rDS(on)
Full
IS = –10 mA, VD = –7.5 V
Room
Full
18
30
60
50
75
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.05
1
100
5
100
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.07
1
100
5
100
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.5
1
100
5
100
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.6
1
100
5
100
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "7.5 V
Room
Hot
–0.02
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
50
Room
0.6
Room
–2.7
Room
3.1
Room
–1
f = 1 MHz
f = 1 MHz, RL = 75 W
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
IL
Reference Supply Current
IR
VIN = 0 V
V, or 5 V
1.5
–5
1.5
–5
mA
4.5
–2
4.5
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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4-4
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
DG180/181/182
Vishay Siliconix
SPECIFICATIONSa FOR DG182
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 Vf
A Suffix
–55 to 125_C
Tempb
Typc
B Suffix
–25 to 85_C
Mind
Maxd
Mind
Maxd
Unit
–10
15
–10
15
V
W
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
Source Off
Leakage Current
rDS(on)
Full
IS = –10 mA, VD = –7.5 V
Room
Full
35
75
150
100
150
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.05
1
100
5
100
VS = "10 V, VD = #10 V
Room
Hot
0.07
1
100
5
100
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.4
1
100
5
100
VS = "10 V, VD = #10 V
Room
Hot
0.5
1
100
5
100
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "10 V
Room
Hot
–0.02
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
50
Room
0.6
Room
–2.7
Room
3.1
Room
–1
–2
–200
nA
–10
–200
Digital Input
10
20
–250
10
20
mA
–250
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Source-Off Capacitance
ton
toff
See Switching Time Test Circuit
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Off Isolation
OIRR
f = 1 MHz
f = 1 MHz, RL = 75 W
ns
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
IL
Reference Supply Current
IR
VIN = 0 V
V, or 5 V
1.5
–5
1.5
–5
mA
4.5
–2
4.5
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-5
DG180/181/182
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
IIN vs. VIN and Temperature
100
5
VINL = 0
VINH = 5 V
80
IL
3
I IN (mA)
I L , I–, I+, I
R (mA)
4
–I–
2
–IINL
60
40
–IR
1
20
I+
IINH
0
–55 –35
–15
5
25
45
65
85
105
0
–55 –35
125
–15
5
Temperature (_C)
rDS(on) vs. Temperature
45
65
85
105
125
Switching Time vs. VD and Temperature (DG180)
100
230
VD = 7.5 V
DG182
210
tON
VD = –7.5 V
190
t ON, t OFF (ns)
DG181
r DS(on) ( W )
25
Temperature (_C)
10
DG180
170
tOFF
150
130
VD = –7.5 V
IS = –10 mA
110
1
–50
–25
0
25
50
75
100
90
–55
125
–35
–15
5
Temperature (_C)
45
65
85
105 125
Temperature (_C)
Leakage vs. Temperature (DG180)
Switching Time vs. VD and Temperature (DG181/182)
130
100
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
VD = –7.5 V
110
t ON, t OFF (ns)
I S, I D (nA)
IS(off)
1
ID(off)
90
tOFF
80
60
0.1
45
tON
100
70
ID(on)
25
VD = 7.5 V
120
10
65
85
Temperature (_C)
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4-6
25
105
125
50
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
DG180/181/182
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
ID(off) vs. Temperature (DG181/182)
Capacitance vs. VD or VS (DG180)
30
100
f = 1 MHz
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
26
C S, D (pF)
I D (nA)
10
B Suffix
1
CS(off)
22
CD(on)
18
A Suffix
CD(off)
14
0.1
10
25
45
65
85
Temperature (_C)
105
125
–8
20
100
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
90
80
CD(on)
14
70
12
60
10
ISO (dB)
C S, D (pF)
16
CS(off)
CD(off)
6
DG180
50
30
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
RL = 75 W
VIN w 220 mVRMS
20
4
0
–10
DG181/182
40
8
2
8
Off Isolation vs. Frequency
Capacitance vs. VD or VS (DG181/182)
18
–4
0
4
VD or VS – Drain or Source Voltage (V)
Capacitance is measured from test terminal
to common.
10
0
–8
–6
–4
–2
0
2
4
6
VD or VS – Drain or Source Voltage (V)
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
8
10
105
106
107
108
f – Frequency (Hz)
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4-7
DG180/181/182
Vishay Siliconix
TEST CIRCUITS
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
+5 V
tON: VS = 3 V
tOFF: VS = –3 V
+15 V
VL
Logic
Input
V+
S
50%
0V
D
VO
IN
RL
1 kW
VR
tr