DG184AP/883L

DG183/184/185 Vishay Siliconix High-Speed Drivers and Dual DPST JFET Switches FEATURES BENEFITS APPLICATIONS D Constant On-Resistance Over Entire Analog Range D Low Leakage D Low Crosstalk D Break-Before-Make Switching D Rad Hardness D D D D D D D D D D D Low Distortion Eliminates Large Signal Errors High Precision Improved Channel Isolation Eliminates Inadvertent Shorting Between Channels D Fault Protection Audio Switching Precision Switching Video Switching Video Routing Sample/Hold Aerospace DESCRIPTION The DG183/184/185 are precision dual double-pole, single-throw (DPST) analog switches designed to provide accurate switching of video and audio signals. This series is ideally suited for applications requiring a constant on-resistance over the entire analog range. on-resistance include audio switching, video switching, and data acquisition. To achieve fast and accurate switch performance, each device comprises four n-channel JFET transistors and a TTL compatible bipolar driver. In the on state, each switch conducts current equally well in either direction. In the off condition, the switches will block up to 20 V peak-to-peak, with feedthrough of less than –60 dB at 10 MHz. The major difference in the devices is the on-resistance (DG183—10 W, DG184—30 W, DG185—75 W). Reduced errors are achieved through low leakage current (ID(on) < 2 nA). Applications which benefit from the flat JFET FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION D1 NC D3 S3 S4 D4 NC D2 1 16 2 15 3 14 4 5 Dual-In-Line Top View 13 12 6 11 7 10 8 9 S1 S4 1 14 S3 D4 D2 2 13 D3 3 D1 4 12 Flat Package 11 S2 IN2 5 Top View 10 IN1 V+ 6 9 V–* VL 7 8 VR IN1 V– VR VL V+ IN2 S1 Refer to JAN38510 Information, Military Section *Common to Substrate and Case S2 TRUTH TABLE Logic Switch 0 OFF 1 ON Logic “0” 0 v0 0.8 8V Logic “1” w 2.0 20V Document Number: 70032 S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600 4-1 DG183/184/185 Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number –25 to 85_C 85 C 16-Pin Sidebraze DG183BP DG184BP DG183AP/883 16-Pin Sidebraze DG184AP/883, JM38510/11103BEA DG185AP/883, JM38510/11104BEA –55 to 125_C JM38510/11103BXA 14-Pin Flat Pack JM38510/11104BXA ABSOLUTE MAXIMUM RATINGS V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Current (S or D) DG184, DG185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA VD to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V VL to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Power Dissipationa 16-Pin Sidebrazeb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V 14-Pin Flat Packc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V Notes: a. All leads welded or soldered to PC Board. b. Derate 12 mW/_C above 75_C c. Derate 10 mW/_C above 75_C VR to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V Current (S or D) DG183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ VL S IN D VR V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70032 S-52895—Rev. D, 16-Jun-97 DG183/184/185 Vishay Siliconix SPECIFICATIONSa FOR DG183 Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc A Suffix B Suffix –55 to 125_C –25 to 85_C Mind Maxd Mind Maxd Unit –7.5 15 –7.5 15 V W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS = –10 mA, VD = –7.5 V Room Full 7.5 10 20 15 25 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.05 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.05 10 1000 15 300 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.04 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.03 10 1000 15 300 Source Off Leakage Current IS(off) Drain Off Leakage Current ID(off) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot –0.1 Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 55 –2 –200 nA –10 –200 mA Digital Input 10 20 –250 10 20 mA –250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR See Switching Time Test Circuit f = 1 MHz f = 1 MHz, RL = 75 W ns pF dB Power Supplies Positive Supply Current I+ Room 0.6 Negative Supply Current I– Room –2.7 Logic Supply Current IL Room 3.1 Reference Supply Current IR Room –1 VIN = 0 V V, or 5 V 1.5 –5 1.5 –5 mA 4.5 –2 4.5 –2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70032 S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600 4-3 DG183/184/185 Vishay Siliconix SPECIFICATIONSa FOR DG184 Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb Typc A Suffix –55 to 125_C B Suffix –25 to 85_C Mind Maxd Mind Maxd Unit –7.5 15 –7.5 15 V W Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance Source Off Leakage Current rDS(on) Full IS = –10 mA, VD = –7.5 V Room Full 22 30 60 50 75 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.06 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.05 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.4 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.3 1 100 5 100 IS(off) Drain Off Leakage Current ID(off) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot –0.02 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 50 Room 0.6 Room –2.7 Room 3.1 Room –1 f = 1 MHz f = 1 MHz, RL = 75 W pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I– Logic Supply Current IL Reference Supply Current IR VIN = 0 V V, or 5 V 3 –5.5 3 –5.5 mA 4.5 –2 4.5 –2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70032 S-52895—Rev. D, 16-Jun-97 DG183/184/185 Vishay Siliconix SPECIFICATIONSa FOR DG185 Test Conditions Unless Otherwise Specified Parameter A Suffix B Suffix –55 to 125_C –25 to 85_C V+ = 15 V, V– = –15 V, VL = 5 V VR = 0 V, VIN = 0.8 V or 2 Vf Tempb VANALOG Full rDS(on) IS = –10 mA, VD = –7.5 V Room Full 35 75 150 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.05 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.07 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, V– = –20 V Room Hot 0.4 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.3 1 100 5 100 Symbol Typc Mind Maxd Mind –10 15 –10 Maxd Unit 15 V 100 150 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current IS(off) Drain Off Leakage Current ID(off) Channel On Leakage Current ID(on) VD = VS = "10 V Room Hot –0.03 Input Current with Input Voltage High IINH VIN = 5 V Room Hot 50 –2 –200 nA –10 –200 Digital Input 10 20 –250 10 20 mA –250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR See Switching Time Test Circuit f = 1 MHz f = 1 MHz, RL = 75 W ns pF dB Power Supplies Positive Supply Current I+ Room 0.6 Negative Supply Current I– Room –2.7 Logic Supply Current IL Room 3.1 Reference Supply Current IR Room –1 VIN = 0 V V, or 5 V 3 –5.5 3 –5.5 mA 4.5 –2 4.5 –2 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70032 S-52895—Rev. D, 16-Jun-97 www.vishay.com S FaxBack 408-970-5600 4-5 DG183/184/185 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Current vs. Temperature IIN vs. VIN and Temperature 100 5 VINL = 0 VINH = 5 V 80 IL 3 I IN (mA) I L , I–, I+, I R (mA) 4 –I– 2 –IINL 60 40 –IR 1 20 I+ IINH 0 –55 –35 –15 5 25 45 65 85 105 0 –55 –35 125 –15 5 Temperature (_C) 45 65 85 105 125 Temperature (_C) rDS(on) vs. Temperature Switching Time vs. VD and Temperature (DG183) 100 230 VD = 7.5 V DG185 210 tON VD = –7.5 V 190 t ON, t OFF (ns) DG184 r DS(on) ( W ) 25 10 DG183 170 tOFF 150 130 VD= –7.5 V IS = –10 mA 110 1 –50 –25 0 25 50 75 100 90 –55 125 –35 –15 5 Temperature (_C) 25 45 65 85 105 125 Temperature (_C) Switching Time vs. VD and Temperature (DG184/185) Leakage vs. Temperature (DG183) 130 100 V+ = 10 V V– = –20 V VL = 5 V VR = 0 VD = 7.5 V 120 VD = –7.5 V 110 t ON, t OFF (ns) I S, I D (nA) 10 IS(off) tON 100 90 tOFF 80 1 70 ID(on) ID(off) 60 0.1 25 45 65 85 Temperature (_C) www.vishay.com S FaxBack 408-970-5600 4-6 105 125 50 –55 –35 –15 5 25 45 65 85 105 125 Temperature (_C) Document Number: 70032 S-52895—Rev. D, 16-Jun-97 DG183/184/185 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) ID(off) vs. Temperature (DG184/185) 30 100 Capacitance vs. VD or VS (DG183) f = 1 MHz V+ = 10 V, V– = –20 V VD = –10 V, VS = 10 V 26 C S, D (pF) I D (nA) 10 B Suffix 1 CS(off) 22 CD(on) 18 A Suffix CD(off) 14 0.1 10 25 20 18 65 85 Temperature (_C) 105 125 –8 Capacitance vs. VD or VS (DG184/185) VINL = 0.8 V VINH = 2 V f = 1 MHz 90 80 CD(on) 70 12 60 10 CS(off) 8 DG184/185 DG183 50 40 CD(off) 6 30 V+ = 15 V, V– = –15 V VR = 0, VL = 5 V RL = 75 W VIN w 220 mVRMS 20 4 0 –10 8 Off Isolation vs. Frequency 14 2 –4 0 4 VD or VS – Drain or Source Voltage (V) 100 ISO (dB) C S, D (pF) 16 45 Capacitance is measured from test terminal to common. 10 0 –8 –6 –4 –2 0 2 4 6 VD or VS – Drain or Source Voltage (V) Document Number: 70032 S-52895—Rev. D, 16-Jun-97 8 10 105 106 107 108 f – Frequency (Hz) www.vishay.com S FaxBack 408-970-5600 4-7 DG183/184/185 Vishay Siliconix TEST CIRCUITS Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. +5 V +15 V VL VS1 VS2 tON: VS = 3 V tOFF: VS = –3 V V+ S1 D1 S2 D2 tr