DG186/187/188
Vishay Siliconix
High-Speed Drivers with SPDT JFET Switches
FEATURES
BENEFITS
APPLICATIONS
D Constant On-Resistance Over
Entire Analog Range
D Low Leakage
D Low Crosstalk
D Rad Hardness
D
D
D
D
D
D
D
D
D
D
Low Distortion
Eliminates Large Signal Errors
High Precision
High Bandwidth Capability
Fault Protection
Audio Switching
Video Switching
Sample/Hold
Guidance and Control Systems
Telemetry
DESCRIPTION
The DG186/187/188 are precision single-pole, double-throw
(SPDT) analog switches designed to provide accurate
switching of video and audio signals. This series is ideally
suited for applications requiring a constant on-resistance over
the entire analog range.
on-resistance include audio switching, video switching, and
data acquisition.
To achieve fast and accurate switch performance, each device
comprises two n-channel JFET transistors and a TTL
compatible bipolar driver. The driver is designed to achieve
break-before-make switching action, eliminating the
inadvertent shorting between channels and the crosstalk
which would result. In the on state, each switch conducts
current equally well in either direction. In the off condition, the
switches will block up to 20 V peak-to-peak, with feedthrough
of less than –60 dB at 10 MHz.
The major difference in the devices is the on-resistance
(DG186—10 W, DG187—30 W, DG188—75 W). Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC
1
NC
2
D1
3
S1
Dual-In-Line
Top View
4
NC
1
NC
2
14
NC
13
NC
12
D2
11
S2
14
NC
13
NC
D1
3
12
D2
S1
4
IN
5
10
NC
V+
6
9
V–*
VL
7
8
VR
11
S2
IN
5
10
NC
V+
6
9
V–
7
8
VR
Flat
Package
Top View
D1
S2
10
1
9
S1
NC
2
IN
8
7
3
4
Refer to JAN38510 Information, Military Section
VL
D2
V+
Metal Can
Top View
5
V–*
6
VR
VL
*COMMON TO SUBSTRATE AND CASE
TRUTH TABLE
Logic
SW1
0
OFF
SW2
ON
1
ON
OFF
Logic “0”
0 v 0.8 V
Logic “1” w 2.0
20V
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-1
DG186/187/188
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG186AA/883
10-Pin Metal Can
DG187AA/883, JM38510/11105BIA
DG188AA/883, JM38510/11106BIA
DG186AP/883
–55 to 125_C
DG187AP/883, JM38510/11105BCA
14-Pin Sidebraze
DG188AP
DG188AP/883, JM38510/11106BCA
JM38510/11105BXA
14-Pin Flat Pack
JM38510/11106BXA
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Current (S or D) DG187, DG188 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
VD to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V
Power Dissipationa
VL to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
10-Pin Metal Canb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
14-Pin Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
14-Pin Flat Packd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6 mW/_C above 75_C
c. Derate 11 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
VR to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V
VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V
Current (S or D) DG186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
VL
S
IN
D
VR
V–
FIGURE 1.
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4-2
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
DG186/187/188
Vishay Siliconix
SPECIFICATIONSa For DG186
Test Conditions
Unless Specified
p
Parameter
Symbol
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 or 2 Vf
Limits
Tempb
Mind
Full
–7.5
Typc
Maxd
Unit
15
V
W
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
IS = –10 mA, VD = –7.5 V
Room
Full
7.5
10
20
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.05
10
1000
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.05
10
1000
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.04
10
1000
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.03
10
1000
Source Off
Leakage Current
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "7.5 V
Room
Hot
Saturation Drain Current
IDSS
2 ms Pulse Duration
Room
300
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
55
See Switching Time Test Circuit
f = 1 MHz
f = 1 MHz, RL = 75 W
ns
pF
dB
Power Supplies
Positive Supply Current
I+
Room
Negative Supply Current
I–
Room
Logic Supply Current
IL
Reference Supply Current
IR
VIN = 0 V
V, or 5 V
0.8
–3
mA
Room
Room
3.2
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-3
DG186/187/188
Vishay Siliconix
SPECIFICATIONSa For DG187
Test Conditions
Unless Specified
p
Parameter
Symbol
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 or 2 Vf
Limits
Tempb
Mind
Full
–7.5
Typc
Maxd
Unit
15
V
W
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
Source Off
Leakage Current
rDS(on)
IS = –10 mA, VD = –7.5 V
Room
Full
22
30
60
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.06
1
100
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.13
1
100
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.04
1
100
VS = "7.5 V, VD = #7.5 V
Room
Hot
0.03
1
100
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "7.5 V
Room
Hot
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
Input Current with
Input Voltage Low
IINL
VIN = 0 V
Full
–2
–200
nA
–0.02
Digital Input
50
f = 1 MHz
f = 1 MHz, RL = 75 W
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
IL
Reference Supply Current
IR
Room
Room
VIN = 0 V
V, or 5 V
0.8
–3
mA
Room
Room
3.2
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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4-4
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
DG186/187/188
Vishay Siliconix
SPECIFICATIONSa For DG188
Test Conditions
Unless Otherwise Specified
Parameter
Limits
V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 0.8 or 2 Vf
Tempb
Mind
VANALOG
Full
–10
rDS(on)
IS = –10 mA, VD = –7.5 V
Room
Full
35
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.05
1
100
VS = "10 V, VD = #10 V
Room
Hot
0.07
1
100
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V
Room
Hot
0.04
1
100
VS = "10 V, VD = #10 V
Room
Hot
0.50
1
100
Symbol
Typc
Maxd
Unit
15
V
75
150
W
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Source Off
Leakage Current
IS(off)
Drain Off
Leakage Current
ID(off)
Channel On
Leakage Current
ID(on)
VD = VS = "10 V
Room
Hot
Input Current with
Input Voltage High
IINH
VIN = 5 V
Room
Hot
Input Current with
Input Voltage Low
IINL
VIN = 0 V
Full
–2
–200
nA
–0.03
Digital Input
50
See Switching Time Test Circuit
f = 1 MHz
f = 1 MHz, RL = 75 W
ns
pF
dB
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Room
Room
0.8
–3
VIN = 0 V
V, or 5 V
mA
Logic Supply
Current
IL
Room
Reference Supply
Current
IR
Room
3.2
–2
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
www.vishay.com S FaxBack 408-970-5600
4-5
DG186/187/188
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
IIN vs. VIN and Temperature
100
5
VINL = 0
VINH = 5 V
80
IL
3
I IN (mA)
I L , I–, I+, I
R (mA)
4
–I–
2
–IINL
60
40
–IR
1
20
I+
IINH
0
–55 –35
–15
5
25
45
65
85
105
0
–55 –35
125
–15
5
Temperature (_C)
45
65
85
105
125
Temperature (_C)
rDS(on) vs. Temperature
Switching Time vs. VD and Temperature (DG186)
100
230
VD = 7.5 V
DG188
210
tON
VD = –7.5 V
190
t ON, t OFF (ns)
DG187
r DS(on) ( W )
25
10
DG186
170
tOFF
150
130
VD= –7.5 V
IS = –10 mA
110
1
–50
–25
0
25
50
75
100
90
–55
125
–35
–15
5
Temperature (_C)
25
45
65
85
105 125
Temperature (_C)
Leakage vs. Temperature (DG186)
Switching Time vs. VD and Temperature (DG187/188)
130
100
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
VD = 7.5 V
120
VD = –7.5 V
110
t ON, t OFF (ns)
I S, I D (nA)
10
IS(off)
tON
100
90
tOFF
80
1
70
ID(on)
ID(off)
60
0.1
25
45
65
85
Temperature (_C)
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4-6
105
125
50
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
DG186/187/188
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
ID(off) vs. Temperature (DG187/188)
Capacitance vs. VD or VS (DG186)
30
100
f = 1 MHz
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
26
C S, D (pF)
I D (nA)
10
B Suffix
1
CS(off)
22
CD(on)
18
A Suffix
CD(off)
14
0.1
10
25
45
65
85
Temperature (_C)
105
125
–8
Capacitance vs. VD or VS (DG187/188)
100
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
90
80
CD(on)
14
70
12
60
ISO (dB)
C S, D (pF)
16
10
CS(off)
8
DG186
50
30
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
RL = 75 W
VIN w 220 mVRMS
20
4
0
–10
DG187/188
40
CD(off)
6
2
8
Off Isolation vs. Frequency
20
18
–4
0
4
VD or VS – Drain or Source Voltage (V)
Capacitance is measured from test terminal
to common.
10
0
–8
–6
–4
–2
0
2
4
6
VD or VS – Drain or Source Voltage (V)
Document Number: 70033
S-52895—Rev. E, 16-Jun-97
8
10
105
106
107
108
f – Frequency (Hz)
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4-7
DG186/187/188
Vishay Siliconix
TEST CIRCUITS
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
+5 V
+15 V
tON: VS = 3 V
tOFF: VS = –3 V
VL
VS1
VS2
Logic
Input
V+
S1
D1
S2
D2
tr