DG2002DL-T1-GE3

DG2002 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG2002 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 8 ns, tOFF: 6 ns), low on-resistance (rDS(on): 7 Ω) and small physical size (SC70), the DG2002 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. • • • • • • The DG2002 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG2002. BENEFITS Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. Low voltage operation (1.8 V to 5.5 V) Low on-resistance - rDS(on): 7 Ω Fast switching - tON : 8 ns, tOFF: 6 ns Low charge injection - QINJ: 5 pC Low power consumption TTL/CMOS compatible • 6-pin SC70 package • • • • Pb-free Available RoHS* COMPLIANT Reduced power consumption Simple logic interface High accuracy Reduce board space APPLICATIONS • • • • • Cellular phones Communication systems Portable test equipment Battery operated systems Sample and hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Logic NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package - 40 to 85 °C SC70-6 Device Marking: E2xx Part Number DG2002DL-T1 DG2002DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71448 S-72609-Rev. C, 24-Dec-07 www.vishay.com 1 DG2002 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Referenced V+ to GND IN, COM, NC, NOa Limit Unit - 0.3 to +6 - 0.3 to (V+ + 0.3) V Continuous Current (Any Terminal) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature Power Dissipation (Packages)b 6-Pin SC70c mA - 65 to + 150 °C 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/°C above 70 °C. SPECIFICATIONS V+ = 2.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 2.0 V, ± 10 % VIN = 0.4 or 1.6 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged On-Resistance rON Flatnessd Switch Off Leakage Current f rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA Room Fulld 38 39.3 rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 21 INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V 46.1 47.1 Ω Room Fulld - 250 - 3.0 250 3.0 pA nA Room Fulld - 250 - 3.0 250 3.0 pA nA Room Fulld - 250 - 3.0 250 3.0 pA nA 1.6 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin Input Current IINL or IINH 0.4 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond d Off-Isolation d Crosstalk VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 td QINJ OIRR XTALK NO, NC Off Capacitanced CNO(off) CNC(off) Channel-On Capacitanced CON Room Fulld 22 31 32 Room Fulld 10 17 18 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 12 Room 5 Room - 67 Room - 71 Room 5 Room 29 dB pF Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC www.vishay.com 2 1.8 VIN = 0 or V+ 0.01 2.2 V 1.0 µA 2.2 µW Document Number: 71448 S-72609-Rev. C, 24-Dec-07 DG2002 Vishay Siliconix SPECIFICATIONS V+ = 3.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ±10 % VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged On-Resistanced rON Flatnessd Switch Off Leakage Current f rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 12.2 13 rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 5 INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 14.8 15.8 Ω Room Full - 500 - 4.0 500 4.0 pA nA Room Full - 500 - 4.0 500 4.0 pA nA Room Full - 500 - 4.0 500 4.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin IINL or IINH Input Current 0.4 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injection Off-Isolation d d Crosstalkd VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 td QINJ OIRR XTALK NO, NC Off Capacitanced CNO(off) CNC(off) Channel-On Capacitanced CON Room Full 12 21 22 Room Full 7 14 15 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 6 Room 5 Room - 67 Room - 69 Room 5 Room 29 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 71448 S-72609-Rev. C, 24-Dec-07 2.7 VIN = 0 or V+ 0.01 3.3 V 1.0 µA 3.3 µW www.vishay.com 3 DG2002 Vishay Siliconix SPECIFICATIONS V+ = 5.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % VIN = 0.8 or 2.4 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd Switch Off Leakage Current VNO, VNC, VCOM rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 6.4 7.4 rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 3 INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, V+ = 5.5 V VNO, VNC = VCOM = 1 V/4.5 V 7.8 8.8 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 4.0 1.0 4.0 2.4 Ω nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin IINL or IINH Input Current 0.8 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injection d VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced CNO(off), CNC(off) Channel-On Capacitanced CON Room Full 8 15 16 Room Full 6 13 14 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 4 Room 5 Room - 69 Room - 69 Room 5 Room 29 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 VIN = 0 or V+ 0.01 5.5 V 1.0 µA 5.5 µW Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 71448 S-72609-Rev. C, 24-Dec-07 DG2002 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 35 35 30 r ON - On-Resistance (Ω) r ON - On-Resistance (Ω) V+ = 1.8 V 30 25 20 V+ = 2 V 15 V+ = 3 V V+ = 5 V 10 25 V+ = 2 V 20 85 °C 15 25 °C - 40 °C 85 °C 25 °C - 40 °C 10 5 5 0 0 0 1 2 3 4 5 0 1 2 VCOM - Analog Voltage (V) 3 4 5 6 VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 10 10 m V+ = 5 V VIN = 0 V 1m I+ - Supply Current (A) I+ - Supply Current (nA) V+ = 5 V 1 0.1 100 µ 10 µ 1µ 100 n 10 n 0.01 - 60 1n - 40 - 20 0 20 40 60 80 100 10 100 K 1M 10 M Supply Current vs. Input Switching Frequency 150 V+ = 5 V T = 25 °C 100 Leakage Current (pA) 1000 Leakage Current (pA) 10 K Supply Current vs. Temperature V+ = 5 V INO(off)/INC(off) 10 50 0 ICOM(off) INO(off)/INC(off) - 50 ICOM(on) ICOM(on) - 100 ICOM(off) 1 - 60 1K Input Switching Frequency (Hz) 10000 100 100 Temperature (°C) - 150 - 40 - 20 0 20 40 60 Temperature (°C) Leakage Current vs. Temperature Document Number: 71448 S-72609-Rev. C, 24-Dec-07 80 100 0 1 2 3 4 5 VCOM, V NO, V NC - Analog Voltage Leakage vs. Analog Voltage www.vishay.com 5 DG2002 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 0 Loss, OIRR, XTALK (dB) t ON, t OFF - Switching Time (ns) tON V+ = 2 V 25 20 tON V+ = 3 V 15 tON V+ = 5 V tOFF V+ = 2 V 10 tOFF V+ = 3 V 5 - 40 - 20 0 20 40 60 80 - 20 - 30 - 40 - 50 OIRR - 60 XTALK - 90 - 100 100 K 100 1M Temperature (°C) 10 M 100 M 1G Frequency (Hz) Switching Time vs. Temperature and Supply Voltage Insertion Loss, Off -Isolation Crosstalk vs. Frequency 1.8 20 1.6 15 1.4 Q - Charge Injection (pC) V T - Switching Threshold (V) V+ = 3 V RL = 50 Ω - 70 - 80 tOFF V+ = 5 V 0 - 60 LOSS - 10 1.2 1.0 0.8 0.6 0.4 10 V+ = 5 V 5 0 V+ = 3 V -5 V+ = 2 V V+ = 2.5 V - 10 - 15 0.2 0.0 - 20 0 www.vishay.com 6 1 2 3 4 5 6 0 1 2 3 4 5 V+ - Supply Voltage (V) VCOM - Analog Voltage (V) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 6 Document Number: 71448 S-72609-Rev. C, 24-Dec-07 DG2002 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ Switch Input Switch Output COM NO or NC tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL VOUT = VCOM R L + R ON Figure 1. Switching Time V+ Logic Input V+ tr < 5 ns tf < 5 ns VINL COM NO VNO VINH VO NC VNC RL 300 Ω IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ COM NC or NO VOUT VOUT + Vgen IN CL = 1 nF IN On Off On GND Q = ΔVOUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Document Number: 71448 S-72609-Rev. C, 24-Dec-07 www.vishay.com 7 DG2002 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO 0V, 2.4 V IN COM RL V COM Off Isolation = 20 log V NO/ NC GND Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71448. www.vishay.com 8 Document Number: 71448 S-72609-Rev. C, 24-Dec-07 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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