DG2011DXA-T1-E3

DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package DESCRIPTION FEATURES The DG2011 is a low on-resistance, single-pole/doublethrow monolithic CMOS analog switch. It is designed for low voltage applications with guaranteed operation at 2 V. The DG2011 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.8 Ω at 2.7 V), charge injection is less than 10 pC over the entire analog range. • • • • • The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG2011 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The DG2011 represents a breakthrough in packaging development for analog switching products. The SC-89 package (1.6 x 1.6 mm2) – also know as SOT-666 in the industry – reduces board spacing by approximately 40 % while obtaining performance comparable to SC-70 analog switch devices available today. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100 % matte tin device terminations, the lead (Pb)-free “-E3” suffix is being used as a designator. Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 1.8 Ω at 2.7 V Low Charge Injection Low Voltage Logic Compatible SC-89 Package (1.6 x 1.6 mm) Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Guaranteed 2 V Operation APPLICATIONS • • • • • • • Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits ADC and DAC Applications Low Voltage Data Acquisition Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-89 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Logic NC NO 0 ON OFF 1 OFF ON COMMERCIAL ORDERING INFORMATION Temp Range Ax - 40 to 85 °C Pin 1 Device Marking: Ax x = Date/Lot Traceability Code Package Part Number SC-89 (SOT-666) with Tape and Reel DG2011DX-T1** SC-89 (SOT-666) Lead (Pb)-free with Tape and Reel DG2011DX-T1-E3** DG2011DXA-T1-E3 ** Note: DG2011DX-T1 and DG2011DX-T1-E3 are not recommended for new designs. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70102 S-60004–Rev. F, 16-Jan-06 www.vishay.com 1 DG2011 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Reference V+ to GND Unit - 0.3 to + 6 V - 0.3 to (V+ + 0.3 V) IN, COM, NC, NOa Continuous Current (NO, NC, COM pins) ± 150 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 mA Storage Temperature D Suffix - 65 to 150 °C Power Dissipation (Packages)b SC-89c 172 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 2.15 mW/°C above 70 °C. SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance Switch Off Leakage Currentf Symbol VNO, VNC, VCOM rON INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf V+ = 2.0 V, VIN = 0.4 V or 1.6 Ve ICOM(on) V+ = 2.0 V, VCOM = 0.2 V/0.9 V INO, INC = 20 mA V+ = 2.2 V, VNO, VNC= 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Limits - 40 to 85 °C Tempa Minb Full 0 Typc 3.5 Room Full Maxb Unit V+ V 5.5 5.5 Ω Room Full -1 - 10 1 10 Room Full Room Full -1 - 10 -1 - 10 1 10 1 10 1.5 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Dynamic Characteristics Cin IINL or IINH Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced Power Supply CNO(off) CNC(off) V+ Negative Supply Current I+ www.vishay.com 2 4 Full VIN = 0 or V+ Full VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω Room 7 Room - 62 Room - 69 Room 29 Room 85 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz CON Positive Supply Range 0.4 VIN = 0 or V+ 1 37 1 pF 1 75 V 110 113 71 76 µA ns 37 1.8 pC dB pF 5.5 0.01 1.0 V µA Document Number: 70102 S-60004–Rev. F, 16-Jan-06 DG2011 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness Switch Off Leakage Current Symbol VNO, VNC, VCOM rON ΔrON rON Flatness INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf V+ = 3 V, ±10 %,VIN = 0.4 V or 2.0 Ve ICOM(on) V+ = 2.7 V, VCOM = 0.9 V/1.5 V INO, INC = 50 mA V+ = 3.3 V, VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Limits –40 to 85 °C Tempa Minb Full 0 Typc Room Full Room 1.8 Room 0.2 Maxb Unit V+ V 2.7 2.9 0.2 Ω 0.5 Room Full -1 - 10 1 10 Room Full Room Full -1 - 10 -1 - 10 1 10 1 10 1.6 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Dynamic Characteristics Cin IINL or IINH Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced Power Supply CNO(off) CNC(off) V+ Power Supply Current I+ Power Consumption PC 4 Full VIN = 0 or V+ Full VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω Room 2 Room - 62 Room - 68 Room 28 Room 84 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz CON Power Supply Range 0.4 1 29 1 75 77 59 62 µA ns 16 1.8 VIN = 0 or V+ pF 1 45 V pC dB pF 5.5 0.01 1.0 V µA 3.3 µW Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70102 S-60004–Rev. F, 16-Jan-06 www.vishay.com 3 DG2011 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 6 6 A: 85 °C B: 25 °C C: - 40 °C T = 25 °C 5 On-Resistance (Ω) 4 V+ = 2.0 V IS = 20 mA 3 2 V+ = 3.0 V IS = 50 mA A B 3 C A B V+ = 5.0 V IS = 100 mA A B C C 1 0 0 0 1 2 3 4 0 6 5 1 2 3 4 5 6 VCOM – Analog Voltage (V) VCOM – Analog Voltage (V) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 10000 10 mA V+ = 5.0 V V+ = 5.0 V VIN = 0 V 1 mA 1000 I+ – Supply Current (A) I+ – Supply Current (pA) V+ = 3.0 V IS = 50 mA 2 V+ = 5.0 V IS = 100 mA 1 V+ = 2.0 V IS = 20 mA 4 rON rON – On-Resistance (Ω) 5 100 10 100 µA 10 µA 1 µA 100 nA 10 nA 1 nA 1 100 pA - 60 - 40 - 20 0 20 40 60 80 100 100 1k 10 k Temperature (°C) Supply Current vs. Temperature 10 M 100 M 250 V+ = 5.0 V V+ = 5.0 V 200 150 ION(off)/INC(off) Leakage Current (pA) 1000 Leakage Current (pA) 1M Supply Current vs. Input Switching Frequency 10000 100 100 k Input Switching Frequency (Hz) ICOM( on) ICOM(off) 10 100 ICOM(off) 50 ICOM(on) 0 - 50 ION(off)/INC(off) - 100 - 150 - 200 1 - 250 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 0 1 2 3 4 5 VCOM, VNO, VNC, – Analog Voltage (V) Leakage vs. Analog Voltage Document Number: 70102 S-60004–Rev. F, 16-Jan-06 DG2011 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 90 0 tON V+ = 2 V LOSS 10 70 60 tON V+ = 3 V 50 40 tOFF V+ = 2 V tON V+ = 5 V 30 tOFF V+ = 5 V tOFF V+ = 3 V 20 LOSS, OIRR, XTLAK (dB) tON, tOFF, – Switchint Time (ns) 80 10 20 30 40 XTALK 50 OIRR 60 70 V+ = 5.0 V RL = 50 Ω 80 0 - 60 90 - 40 - 20 0 20 40 60 80 100 100 K 1M 10 M Temperature (°C) Switching Time vs. Temperature and Supply Voltage 1G Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 3.0 30 2.5 20 Q – Charge Injection (pC) VT – Switchint Threshold (V) 100 M Frequency (Hz) 2.0 1.5 1.0 V+ = 2 V V+ = 5 V 10 0 V+ = 3 V 10 20 0.5 30 0.0 0 1 2 3 4 5 6 V+ – Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 70102 S-60004–Rev. F, 16-Jan-06 7 0 1 2 3 4 5 6 VCOM – Analog Voltage (V) Charge Injection vs. Analog Voltage www.vishay.com 5 DG2011 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ NO or NC Switch Input tr < 5 ns tf < 5 ns 50% 0V Switch Output COM VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ tr