DG201A_MIL/202_MIL
Vishay Siliconix
Monolithic Quad SPST CMOS Analog Switches
(Obsolete for non-hermetic. Use DG201B/202B as pin-for-pin replacements.)
Wide Input Range
Low Distortion Switching
Can Be Driven from Comparators or
Op Amps Without Limiting Resistors
15-V Input Range
Low Off Leakage—ID(on): 0.1 nA
Low On-Resistance—rDS(on): 115
44-V Maximum Supply Ratings
TTL and CMOS Compatible
Disk Drives
Radar Systems
Communications Systems
Sample-and-Hold
The DG201A_MIL and DG202_MIL are quad SPST analog
switches designed to provide accurate switching over a wide
range of input signals. When combining a low on-resistance
and a wide signal range (15 V) with low charge-transfer
these devices are well suited for industrial and military
applications.
switches will block up to 30 V peak-to-peak and have a 44-V
absolute maximum power supply rating.
Built on Vishay Siliconix’ high voltage metal gate process to
achieve optimum switch performance, each switch conducts
equally well in both directions when on. When off these
The DG201A_MIL/202_MIL are available in hermetic
packages. For plastic packages, use the DG201B/202B as
pin-for-pin replacements.
These two devices are differentiated by the type of switch
actions (See Truth Table).
Dual-In-Line
DG201A_MIL
IN1
LCC
D1 IN1 NC IN2 D2
DG201A_MIL
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V–
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Key
3
2
1
20
19
S1
4
18
S2
V–
5
17
V+
NC
6
16
NC
7
15
NC
8
14
GND
S4
9
10
11 12
S3
13
D4 IN4 NC IN3 D3
Top View
Top View
Logic
DG201A_MIL
DG202_MIL
0
ON
OFF
1
OFF
ON
Logic “0” 0.8 V
Logic “1” 2.4 V
Document Number: 70036
S-00405—Rev. G, 21-Feb-00
www.vishay.com FaxBack 408-970-5600
4-1
DG201A_MIL/202_MIL
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG201AAK
DG201AAK/883, JM38510/12302BEA
–55
55 to 125
125_C
C
16 Pi CerDIP
16-Pin
C DIP
7705301EA
DG202AK
DG202AK/883
JM38510/12302BEC
16-Pin Sidebraze
–55
125_C
55 to 125
C
7705301EC
LCC-20
77053012A
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
(K, Z Suffix) . . . . . . . . . . . . . . . . . –65 to 150_C
(J, Y Suffix) . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin CerDIP and Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 20 mA, whichever occurs first
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 12 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 70 mA
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
–
+
V+
GND
INX
D
V–
FIGURE 1.
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4-2
Document Number: 70036
S-00405—Rev. G, 21-Feb-00
DG201A_MIL/202_MIL
Vishay Siliconix
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15V
VIN = 2.4 V, 0.8 Vf
A Suffix
–55 to 125_C
Tempb
Mind
Full
–15
Typc
Maxd
Unit
15
V
Analog Switch
Analog Signal Rangee
VANALOG
Room
115
175
rDS(on)
VD = 10 V, IS = 1 mA
Source Off
Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room
Full
–1
–100
0.02
1
100
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room
Full
–1
–100
0.02
1
100
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room
Full
–1
–200
0.15
1
200
VIN = 2.4 V
Room
Full
–1
–1
–0.0004
VIN = 15 V
Room
Full
IINL
VIN = 0 V
Room
Full
Turn-On Time
tON
Turn-Off Time
tOFF
See Switching
g Time
T t Circuit
Test
Ci it
Drain-Source On-Resistance
Full
250
W
nA
A
Digital Control
p Current with
Input
Input
High
I
t Voltage
V lt
Hi h
Input Current with
Input Voltage Low
IINH
0.003
–1
–10
1
10
mA
A
–0.0004
Dynamic Characteristics
Charge Injection
Q
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on) +
CS(on)
Off Isolation
OIRR
Channel-to-Channel
Crosstalk
XTALK
CL = 1000 pF, Vg= 0 V
Rg = 0 W
VS = 0 V, VIN = 5 V, f = 1 MHz
VD = VS = 0 V, VIN = 0 V
f = 1 MHz
VIN = 5 V, RL = 75 W
VS = 2 V, f = 100 kHz
Room
480
600
Room
370
450
Room
20
Room
5
Room
5
Room
16
Room
70
Room
90
ns
pC
pF
F
dB
Power Supply
Positive Supply Current
I+
Negative Supply Current
I–
Room
0.9
All Channels On or Off
2
mA
Room
–1
–0.3
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70036
S-00405—Rev. G, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
4-3
DG201A_MIL/202_MIL
Vishay Siliconix
_
Charge Injection vs. Analog Voltage
rDS(on) vs. VD and Power Supply Voltage
70
300
V+ = 15 V, V– = –15 V
TA = 25_C
60
TA = 25_C
250
50
5 V
r DS(on) ( )
40
Q (pC)
30
QD
20
10
200
8 V
10 V
150
12 V
QS
0
15 V
100
–10
–20
50
–30
–15
–10
–5
0
5
10
15
–25
–15
–5
VANALOG – Analog Voltage (V)
rDS(on) vs. VD and Temperature
15
25
Leakage vs. Temperature
100 nA
180
V+ = 15 V, V– = –15 V
160
V+ = 15 V, V– = –15 V
VD = 14 V
10 nA
140
1 nA
125_C
120
I S, I D
r DS(on) ( )
5
VD – Drain Voltage (V)
85_C
100 pA
IS(off), ID(off), ID(on)
25_C
100
10 pA
0_C
80
–40_C
1 pA
–55_C
60
–15
–10
–5
0
5
VD – Drain Voltage (V)
10
0.1 pA
–55 –35
15
Supply Current vs. Switching Frequency
5
25
45
65
Temperature (_C)
85
105
125
Insertion Loss vs. Frequency
2.0
6
4
1 M
0.0
V+ = 15 V
V– = –15 V
V+ = 15 V
V– = –15 V
Ref. 0.0 dBm
2
I+
LOSS (dB)
I+, I– (mA)
–15
0
I–
–2.0
1 k
See Figures 3 and 4
–4.0
–2
RL = 50
–6.0
–4
–6
1k
10 k
100 k
f – Frequency (Hz)
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4-4
1M
1k
10 k
100 k
1M
f – Frequency (Hz)
10 M
Document Number: 70036
S-00405—Rev. G, 21-Feb-00
DG201A_MIL/202_MIL
Vishay Siliconix
_
Crosstalk and Off Isolation vs. Frequency
Leakage Current vs. Analog Voltage
0
–20
V+ = 15 V
V– = –15 V
Ref. 0 dBm
RL = 50
8
6
4
–60
I S, I D (pA)
X TALK, ISO (dB)
–40
10
Off Isolation
–80
Crosstalk
–100
2
IS(off), ID(off)
0
ID(on)
–2
V+ = 15 V
V– = –15 V
TA = 25_C
For ID(off), VS = –VD
For IS(off), VD = – VS
–4
–120
See Figures 3 and 4
–6
–140
–8
–160
10 k
–10
100 k
1M
f – Frequency (Hz)
10 M
–20
Switching Time vs. Temperature
1000
V+ = 15 V
V– = –15 V
VS = 2 V
900
800
800
700
700
t ON, t OFF (ns)
t ON, t OFF (ns)
20
Switching Time vs. Power Supply Voltage
1000
900
–15
–10
–5
0
5
10
15
VD or VS – Drain or Source Voltage (V)
600
tON
500
400
600
tON
500
400
tOFF
tOFF
300
300
200
200
100
–55
–35
–15
5
25
45
65
Temperature (_C)
Document Number: 70036
S-00405—Rev. G, 21-Feb-00
85
105
125
100
10
12
14
16
18
20
22
V+ – Positive Supply (V)
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4-5
DG201A_MIL/202_MIL
Vishay Siliconix
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
+15 V
V+
D
S
VS = +2 V
VO
IN
tr