DG201HSDJ-E3

DG201HS Vishay Siliconix High-Speed Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 Ω) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. • • • • • • • To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary high-voltage silicon-gate process. An epitaxial layer prevents latchup. BENEFITS • • • • • • • Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off. Fast Switching-tON: 38 ns Low On-Resistance: 25 Ω Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: - 30 mA Pb-free Available RoHS* COMPLIANT Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP) APPLICATIONS • • • • • • • • • Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION LCC Dual-In-Line, SOIC and TSSOP D1 IN1 1 16 IN2 D1 2 15 D2 14 S2 S1 V- 3 13 4 NC IN2 D2 Key 3 2 1 20 19 S1 4 18 S2 V- 5 17 V+ NC 6 16 NC GND 7 15 NC S4 8 14 S3 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View IN1 9 D4 10 IN4 11 12 NC IN3 Top View TRUTH TABLE Logic 0 1 Switch ON OFF Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V 13 D3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70038 S-71241–Rev. G, 25-Jun-07 www.vishay.com 1 DG201HS Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG201HSDJ DG201HSDJ-E3 16-Pin Plastic DIP 16-Pin Narrow SOIC DG201HSDY DG201HSDY-E3 DG201HSDY-T1 DG201HSDY-T1-E3 16-Pin TSSOP DG201HSDQ DG201HSDQ-E3 DG201HSDQ-T1 DG201HSDQ-T1-E3 - 40 to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ to V- Unit 44 GND to V- 25 a Digital Inputs , VS, VD Continuous Current (Any Terminal) 30 Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100 Storage Temperature (A Suffix) - 65 to 150 (D Suffix) - 65 to 125 16-Pin Plastic DIPc Power Dissipation (Package)b V (V-) - 4 to (V+) + 4 or 30 mA, whichever occurs first 16-Pin CerDIP mA °C 470 d 900 e 16-Pin Narrow Body SOIC and TSSOP 600 LCC-20d 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75 °C. d. Derate 12 mW/°C above 75 °C. e. Derate 7.6 mW/°C above 75 °C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX 5V Reg Level Shift/ Drive VV+ DX INX GND V- Figure 1. www.vishay.com 2 Document Number: 70038 S-71241–Rev. G, 25-Jun-07 DG201HS Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Symbol VIN = 3 V, 0.8 Vf Tempb IS = - 10 mA, VD = ± 8.5 V V+ = 13.5 V, V- = - 13.5 V Room Full 25 Room Room Full Room Full Room Full 3 0.1 Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind Maxd Unit V- V+ V- V+ V 50 75 Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) Full V+ = 16.5 V, V- = - 16.5 V VD = ± 15.5 V VS= ± 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Input Capacitance Input Current CIN IINH or IINL Full 0.1 0.1 50 75 % -1 - 60 -1 - 60 -1 - 60 1 60 1 60 1 60 2.4 -1 - 20 -1 - 20 -1 - 20 1 20 1 20 1 20 2.4 0.8 0.8 5 VIN under test = 0.8 V, 3 V Full RL = 1 kΩ, CL = 35 pF VS = ± 10 V, VINH = 3 V See Figure 2 tOFF2 Room Full Room Full Room 150 ts Room 180 Room -5 Room 85 Room 100 nA V pF -1 1 -1 1 µA 60 75 50 70 ns Dynamic Characteristics Turn-On Time Turn-Off Time Output Settling Time to 0.1 % Charge Injection tON tOFF1 Q Off Isolation OIRR Crosstalk (Channel-to-Channel) XTALK CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 Ω RL = 1 kΩ, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kΩ, CL = 10 pF f = 100 kHz 48 30 Source Off Capacitance CS(off) Room 8 CD(off) Room 8 Channel On Capacitance Drain-to-Source Capacitance CD(on) Room 30 Room 0.5 Room Full Room Full 4.5 CDS(off) pC dB Drain Off Capacitance VS , VD = 0 V, f = 1 MHz 60 75 50 70 pF Power Supplies Positive Supply Current Negative Supply Current Power Consumptionc I+ IPC V+ = 15 V, V- = - 15 V VIN = 0 or 5 V Full 10 10 3.5 -6 mA -6 240 240 mW Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 °C, Full = as determined by the operating temperature suffix. c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 70038 S-71241–Rev. G, 25-Jun-07 www.vishay.com 3 DG201HS Vishay Siliconix SPECIFICATIONSa FOR SINGLE SUPPLY Test Conditions Unless Specified V+ = 10.8 V to 16.5 V, Parameter Symbol V- = GND = 0 V, VIN = 3 V, 0.8 Vf Tempb Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind Maxd Unit 0 V+ 0 V+ V -1 - 20 -1 - 20 -1 - 20 90 120 1 20 1 20 1 20 Ω -1 - 60 -1 - 60 -1 - 60 90 120 1 60 1 60 1 60 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) Full IS = - 10 mA, VD = 8.5 V V+ = 10.8 V V+ = 16.5 V VS= 0.5 V, 10 V VD = 10 V, 0.5 V V+ = 16.5 V VD = 0.5 V, 10 V Room Full Room Full Room Full Room Full Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Input Capacitance CIN Input Current Full 65 0.1 0.1 0.1 2.4 0.8 5 V+ = 16.5 V VIN under test = 0.8 V, 3 V Full RL = 1 kΩ, CL = 35 pF VS = 2 V, V = 10.8 V See Figure 2 tOFF2 Room Full Room Full Room 150 ts Room 180 Room 10 Room 85 Room 100 IINH or IINL 2.4 0.8 nA V pF -1 1 -1 1 µA 50 70 50 70 ns Dynamic Characteristics Turn-On Time Turn-Off Time Output Settling Time to 0.1 % Charge Injection tON tOFF1 Q Off Isolation OIRR Crosstalk (Channel-to-Channel) XTALK CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 Ω RL = 1 kΩ, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kΩ, CL = 10 pF f = 100 kHz Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) VANALOG = 0 V I+ PC V+ = 15 V, VIN = 0 or 5 V Power Supply Positive Supply Current Power Consumptionc f = 1 MHz 50 70 50 70 pC dB Room 10 Room 10 Room 30 pF Full 10 10 mA Full 150 150 mW Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70038 S-71241–Rev. G, 25-Jun-07 DG201HS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 r DS(on) – Drain-Source On-Resistance (Ω) r DS(on) – Drain-Source On-Resistance (Ω) 70 60 50 ±5V 40 ± 10 V 30 ± 15 V 20 ± 20 V 10 0 - 20 - 16 - 12 -8 -4 0 4 8 12 16 V+ = 15 V V- = - 15 V 40 125 °C 85 °C 30 25 °C 20 0 °C - 55 °C 10 0 - 15 20 - 10 -5 10 15 rDS(on) vs. VD and Temperature 180 10 nA V+ = 5 V 160 140 120 1 nA Leakage r DS(on) – Drain-Source On-Resistance (Ω) 5 VD – Drain Voltage (V) VD – Drain Voltage (V) rDS(on) vs. VD and Power Supply Voltages 7V 100 80 10 V 60 ID(on) 100 pA 12 V IS(off), ID(off) 15 V 40 20 0 0 2 4 6 8 10 12 14 10 pA - 60 - 40 - 20 16 VD – Drain Voltage (V) 0 20 40 60 80 100 120 140 Temperature (°C) rDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Temperature 2.5 55 2 50 Switching Time (ns) V TH (V) 0 1.5 1 45 tON 40 35 0.5 tOFF 30 0 4 6 8 10 12 14 16 18 20 Positive Supplies (V) Input Switching Threshold vs. Supply Voltage Document Number: 70038 S-71241–Rev. G, 25-Jun-07 ±4 ±6 ±8 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20 Supply Voltage (V) Switching Time vs. Power Supply Voltage www.vishay.com 5 DG201HS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 65 45 V+ = 15 V V- = - 15 V 60 tON 55 t ON, t OFF (ns) Switching Time (ns) 40 35 tOFF 30 50 45 tON 40 25 35 tOFF 30 20 - 55 - 25 0 25 50 75 100 4 125 6 8 Temperature (°C) 12 14 16 18 20 Switching Times vs. Power Supply Voltage Switching Times vs. Temperature 20 50 V+ = 15 V, V- = 0 V V+ = 10.8 V V- = 0 V 10 40 Chargie Injection (pC) 45 Switching Time (ns) 10 V+ – Positive Supply (V) tON 35 tOFF 30 0 - 10 V+ = 15 V V- = - 15 V - 20 - 30 25 - 40 20 - 55 - 25 0 25 50 75 100 - 15 125 - 10 -5 0 5 10 Temperature (°C) VS – Source Voltage (V) Switching Times vs. Temperature Charge Injection vs. Source Voltage 15 120 V+ = 15 V V- = - 15 V 110 100 RL = 100 Ω OIRR 90 80 70 RL = 1 kΩ 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) Off Isolation vs. Frequency www.vishay.com 6 Document Number: 70038 S-71241–Rev. G, 25-Jun-07 DG201HS Vishay Siliconix TEST CIRCUITS + 15 V V+ D S ± 10 V IN CL 35 pF RL 1 kΩ V- tr < 20 ns tf < 20 ns 50 % 0V VO 3V GND 3V Logic Input tOFF1 Switch Input VS Switch Output VO 90 % 10 % tON - 15 V tOFF2 CL (includes fixture and stray capacitance) RL VO = V S RL + rDS(on) Figure 2. Switching Time + 15 V V+ Rg S D IN CL 1 nF 3V INX V- GND ΔVO VO VO SWON OFF Q = ΔVO x CL - 15 V Figure 3. Charge Injection V+ C S1 VS V+ S VS + 15 V C + 15 V VO D Rg = 50 Ω Rg = 50 Ω D1 50 Ω IN1 0 V, 3 V RL IN NC 0 V, 3 V GND V- C 0 V, 3 V S2 D2 VO RL IN2 GND V- C - 15 V - 15 V Off Isolation = 20 log VS VO XTA LK Isolation = 20 log VS VO C = RF bypass Figure 4. Off Isolation Document Number: 70038 S-71241–Rev. G, 25-Jun-07 Figure 5. Crosstalk www.vishay.com 7 DG201HS Vishay Siliconix APPLICATIONS A high-speed, low-glitch analog switch such as Vishay Siliconix’s DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit. Input Buffer DG201HS JFET Buffer OUTPUT to A/D Converter VANALOG CH (Polystyrene) Si581 SAMPLE/HOLD Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70038. www.vishay.com 8 Document Number: 70038 S-71241–Rev. G, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1