DG2034DQ-T1-E3

DG2034 Vishay Siliconix Single 4:1 Low rON Multiplexers DESCRIPTION The DG2034 is a low voltage, low rON, high bandwidth single 4 to 1 analog multiplexer designed for high performance switching of analog and video signals. Combining low power; fast switching; low on-resistance, flatness and matching; and small physical size, the DG2034 is ideal for portable and battery applications. Built on Vishay Siliconix’s low voltage CMOS process, the DG2034 has an epitaxial layer which prevents latchup. Break-before-make is guaranteed. FEATURES • Low voltage operation (1.8 V to 5.5 V) • • • • Low on-resistance - rDS(on): 4 Ω Off-isolation and crosstalk: - 55 dB at 10 MHz Fast switch - 25 ns tON Low charge injection - QINJ: 4.7 pC RoHS COMPLIANT • Low power consumption - 4 µW BENEFITS • • • • • High accuracy High bandwidth TTL and low voltage logic compatibility Low power consumption Reduced PCB space APPLICATIONS • • • • • Mixed signal routing Portable and battery operated systems Low voltage data acquisition Modems PCMCIA cards FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 12-Pin QFN (3 x 3 mm) A0 NC A1 12 11 10 MSOP-10 Logic S1 1 9 S2 GND 2 8 COM S3 3 7 S4 4 5 6 EN NC V+ 10 A1 2 9 S2 GND 3 8 COM S3 4 7 S4 EN 5 6 V+ A0 1 S1 Logic Top View Top View TRUTH TABLE ORDERING INFORMATION A1 A0 EN ON Switch X X 0 None 0 0 1 S1 0 1 1 S2 1 0 1 S3 1 1 1 S4 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 Temp Range - 40 °C to 85 °C Package MSOP-10 Part Number DG2034DQ-T1-E3 12-pin QFN (3 x 3 mm) DG2034DN-T1-E4 www.vishay.com 1 DG2034 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Referenced V+ to GND Unit - 0.3 to + 6 AX, EN, SX, COMa V - 0.3 to (V+ + 0.3) Continuous Current (Any Terminal) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 100 Power Dissipation (Packags)b QFN-12 (3 x 3 mm)c 1295 d 320 MSOP-10 mA mW Storage Temperature (D Suffix) - 65 to 150 °C Notes: a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 16.2 mV/°C above 70 °C. d. Derate 4.0 mV/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) Parameter Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VAL = 0.4 V, VAH = 1.5 Ve Limits - 40 to 85 °C Temp.a Min.c VANALOG Full 0 rON Room Full 4 7 9 Room 0.1 0.3 Room 0.3 1.5 Symbol Typ.b Max.c Unit V+ V Analog Switch Analog Signal Ranged On-Resistance ΔrON rON Match rON Flatness rON Flatnessd,f Off Leakage Currentg IS(off) V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V IS = 10 mA V+ = 3.3 V, VS = 1 V/3 V VCOM = 3 V/1 V, VEN = 0 V Room Full -1 - 10 0.3 1 10 Room Full -1 - 10 0.3 1 10 0.3 1 10 COM Off Leakage Currentg ICOM(off) Channel-On Leakage Currentg ICOM(on) V+ = 3.3 V VCOM = VS = 1 V/3 V Room Full -1 - 10 IA or IEN VA/EN = 0 or V+, See Truth Table Full - 1.0 1.5 Ω nA Digital Control Input Currentd 1.0 d Input High Voltage VAH or VENH Full d VAL or VENL Full Turn-On Time tON Room Full 25 35 45 Turn-Off Time tOFF Room Full 15 25 35 Room 10.5 Room Full 30 Input Low Voltage 0.4 µA V Dynamic Characteristics Break-Before-Make Timed VS = 1.5 V, RL = 300 Ω tD Transition Time ttrans VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 Ω Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω Off-Isolationd OIRR Channel-to-Channel Crosstalkd Off Capacitanced COM Off XTALK RL = 50 Ω, CL = 5 pF RL = 50 Ω, CL = 5 pF Room - 4.7 f = 1 MHz Room - 73 f = 10 MHz Room - 54 f = 1 MHz Room - 77 f = 10 MHz Room - 59 Room 14 Room 46 Room 67 CS(off) Capacitanced CCOM(off) d CCOM(on) COM On Capacitance V+ = 2.7 V, f = 1 MHz ns 45 55 pC dB pF Power Supply Power Supply Range V+ Power Supply Currentd I+ www.vishay.com 2 2.7 V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table Full 3.3 V 1.0 µA Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VAL = 0.8 V or VAH = 2.4 Ve Limits - 40 to 85 °C Temp.a Min.c VANALOG Full 0 rON Symbol Typ.b Max.c Unit V+ V Room Full 3 5.5 7 Room 0.16 0.5 Room 0.6 1.5 Analog Switch Analog Signal Ranged On-Resistance ΔrON rON Match rON Flatness rON Flatness d,f IS(off) Off Leakage Current V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V IS = 10 mA V+ = 5.5 V, VS = 1 V/4.5 V VCOM = 4.5 V/1 V, VEN = 0 V Room Full -1 - 10 0.5 1 10 Room Full -1 - 10 0.5 1 10 0.5 1 10 COM Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V, VCOM = VS = 1 V/4.5 V Room Full -1 - 10 IAH or IENH VA or VEN = 0 or V+, See Truth Table Full - 1.0 VAH or VENH Full 2.4 VAL or VENL Full Turn-On Time tON Room Full 18 30 40 Turn-Off Time tOFF Room Full 12 20 30 Room 10.5 Room Full 25 Ω nA Digital Control Input Currentd Input High Voltage d Input Low Voltaged 1.0 0.8 µA V Dynamic Characteristics Break-Before-Make Timed VS = 3.0 V, RL = 300 Ω tD VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 Ω Transition Time ttrans Off-Isolationd OIRR RL = 50 Ω, CL = 5 p Channel-to-Channel Crosstalkd XTALK RL = 50 Ω, CL = 5 pF Charge Injection QINJ d CS(off) Capacitanced CCOM(off) d CCOM(on) Off Capacitance COM Off d COM On Capacitance f = 1 MHz Room - 73 f = 10 MHz Room - 53.5 f = 1 MHz Room - 77 f = 10 MHz CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω V+ = 5 V, f = 1 MHz Room - 60.2 Room - 4.4 Room 13 Room 43 Room 64 ns 40 50 dB pC pF Power Supply Power Supply Range V+ Power Supply Current I+ 4.5 V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table Full 5.5 V 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5 V testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 3 DG2034 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5.0 12 4.5 V+ = 2.7 V 8 rON - On-Resistance (Ω) rON - On-Resistance (Ω) 10 V+ = 1.8 V V+ = 2.7 V 6 V+ = 3.3 V 4 V+ = 5.5 V 4.0 C 3.5 A 2.5 B 2.0 A 1.5 A = 85 °C B = 25 °C C = - 40 °C 1.0 2 0.5 0.0 0.0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature rON vs. VCOM and Supply Voltage 10 m 10000 1m I+ - Supply Current (A) V+ = 5.5 V I+ - Supply Current (pA) V+ = 4.5 V C B 3.0 1000 V+ = 5.5 V 100 µ 10 µ 1µ 100 n 10 n 100 - 75 - 50 - 25 0 25 50 75 100 1n 10 125 1K 10 K 100 K 1M 10 M Temperature (°C) Input Switching Frequency (Hz) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 400 10000 V+ = 5.5 V VCOM = 4.5 V VS = 1.0 V 200 IS( off ) 100 V+ = 5.5 V 0 1000 Leakage Current (pA) Leakage Current (pA) 100 10 - 200 - 400 ICOM(on) IS(off) - 600 - 800 ICOM(off) - 1000 ICOM( on ) - 1200 ICOM( off ) 1 - 75 - 50 - 25 0 25 50 75 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 125 - 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS - Analog Voltage (V) Leakage vs. Analog Voltage Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 30 tON V+ = 3.3 V 20 tON V+ = 5.5 V 15 tOFF V+ = 3.3 V 10 - 20 Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) Loss 0 25 tOFF V+ = 5.5 V - 40 OIRR - 60 XTALK - 80 5 V+ = 3.3 V RL = 50 Ω - 100 0 - 80 - 60 - 40 - 20 - 120 0 20 40 60 80 100 120 140 10 k 100 k 10 M 100 M Frequency (Hz) Switching Time vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency 1G 3 2.2 Q - Charge Injection (pC) 2 VT - Switching Threshold (V) 1M Temperature (°C) 1.8 1.4 1.0 V+ = 5.5 V 1 0 -1 -2 V+ = 3.3 V -3 V+ = 1.8 V -4 0.6 CL = 1 nF -5 -6 0.2 1 2 3 4 5 0 6 1 2 3 4 5 6 VCOM - Analog Voltage (V) V+ - Supply Voltage (V) Charge Injection vs. Analog Voltage Switching Threshold vs. Supply Voltage 35 RL = 300 Ω 30 tTRANS- , V+ = 3.0 V tTRANS+, V+ = 3.3 V 25 20 tTRANS- , V+ = 5.5 V 15 tTRANS+, V+ = 5.5 V 10 - 80 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Transistion Time vs. Temperature Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 5 DG2034 Vishay Siliconix TEST CIRCUITS V+ Logic Input VINH tr < 5 ns tf < 5 ns 50 % VINL Switch Input VIN Switch Output V+ NO or NC COM tOFF VOUT VOUT IN RL 300 Ω GND CL 35 pF VOUT = VIN 0V Switch Output CL (includes fixture and stray capacitance) Note: RL 0.9 x VOUT 90 % tON Logic input waveform is inverted for switches that have the opposite logic sense control RL + rON Figure 1. Switching Time V+ Logic Input V+ VNO VNC tr < 5 ns tf < 5 ns VINL COM NO VINH VO NC RL 300 Ω IN CL 35 pF GND VNC = VNO VO Switch Output 90 % 0V tD tD 50 % tr < 5 ns tf < 5 ns CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make +15 V V+ NO or NC COM VS1 VS2 VO Logic VINH Input VINL NC or NO RL 300 Ω IN tTRANS+ CL 35 pF tTRANS- VS1 V01 GND 90 % Switch Output CL (includes fixture and stray capacitance) VO = VS VS2 V02 10 % RL RL + rON Figure 3. Transition Time www.vishay.com 6 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix TEST CIRCUITS ΔVO V+ VO V+ Rg COM NO or NC IN Vg IN VO OFF ON CL 1 nF OFF Q = ΔVO x CL GND IN dependent on switch configuration Input polarity determined by sense of switch. VIN = 0 - V+ Figure 4. Charge Injection V+ C V+ VS VIN NO or NC COM Rg = 50 Ω 50 Ω IN 0 V or 2.4 V NC or NO VOUT GND XTALK Isolation = 20 log VOUT VIN C = RF bypass Figure 5. Crosstalk V+ V+ C C V+ COM NO or NC COM Meter Rg = 50 Ω IN RL 50 Ω IN 0 V, 2.4 V 0 V, 2.4 V NO or NC GND GND Off Isolation = 20 log C = RF Bypass Figure 6. Off Isolation VCOM HP4192A Impedance Analyzer or Equivalent f = 1 MHz VNO/NC Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72418. Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 7 Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places C ς A2 Seating Plane 0.05 S E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) NOTES: 1. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. N = 10L Die thickness allowable is 0.203"0.0127. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71245 12-Jul-02 MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.17 - 0.27 8 0.17 0.20 0.23 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.50 BSC 2.00 BSC 0.40 0.55 10 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 www.vishay.com 1 Package Information Vishay Siliconix QFN−12 LEAD (3 X 3) D2 D D2/2 Terminal Tip 3 - B- D/2 L E2/2 E/2 e E E2 C 2xe 0.25 - A- AA DD BB Exposed Pad 4 4xb 0.10 CC Pin #1 Identifier M C A B 0.25 3 C 2xe TOP VIEW BOTTOM VIEW // 0.10 C 0.08 C A NX 4 A1 SEATING PLANE - C A3 SIDE VIEW MILLIMETERS NOTES: 1. All dimensions are in millimeters. 2. N is the total number of terminals. 3. Dimension b applies to metallized terminal and is measured between 0.25 and 0.30 mm from terminal tip. 4. Coplanarity applies to the exposed heat sink slug as well as the terminal. 5. The pin #1 identifier may be either a mold or marked feature, it must be located within the zone iindicated. INCHES Dim Min Nom Max Min Nom Max A b D D2 E E2 e L AA BB CC DD 0.80 0.90 1.00 0.032 0.035 0.039 0.18 0.23 0.30 0.007 0.009 0.012 3.00 BSC 1.00 1.15 0.118 BSC 1.25 0.039 3.00 BSC 1.00 1.15 1.25 0.039 0.50 BSC 0.45 0.55 0.045 0.049 0.118 BSC 0.045 0.049 0.02 BSC 0.65 0.018 0.022 0.435 0.017 0.435 0.017 0.18 0.007 0.18 0.007 0.026 ECN: C-03092—Rev. A, 14-Apr-03 DWG: 5898 Document Number: 72209 14-Apr-03 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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