DG211BDJ

DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. • • • • • • • These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle up to ± 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (see Truth Table.) ± 22 V supply voltage rating TTL and CMOS compatible logic Low on-resistance - RDS(on): 50  Low leakage - ID(on): 20 pA Single supply operation possible Extended temperature range Fast switching - tON: 120 ns • Low charge injection - Q: 1 pC BENEFITS • Wide analog signal range • • • • • Simple logic interface Higher accuracy Minimum transients Reduced power consumption Superior to DG211, DG212 • Space savings (TSSOP) APPLICATIONS • • • • • • • Industrial instrumentation Test equipment Communications systems Disk drives Computer peripherals Portable instruments Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG211B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 D1 2 15 D2 14 S2 S1 3 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic DG211B DG212B 0 ON OFF 1 OFF ON Logic “0” 0.8 V Logic “1” 2.4 V Top View * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com 1 DG211B, DG212B Vishay Siliconix ORDERING INFORMATION Temp. Range Package 16-Pin Plastic DIP 16-Pin Narrow SOIC - 40 °C to 85 °C 16-Pin TSSOP Standard Part Number Lead (Pb)-free Part Number DG211BDJ DG212BDJ DG211BDY DG211BDY-T1 DG211BDJ-E3 DG212BDJ-E3 DG211BDY-E3 DG211BDY-T1-E3 DG212BDY DG212BDY-T1 DG212BDY-E3 DG212BDY-T1-E3 DG211BDQ DG211BDQ-T1 DG211BDQ-E3 DG211BDQ-T1-E3 DG212BDQ DG212BDQ-T1 DG212BDQ-E3 DG212BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Voltages Referenced, V+ to V- Unit 44 GND 25 Digital Inputsa, VS, VD Current (Any terminal) 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature mA - 65 to 125 c Power Dissipation (Package)b V (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 16-Pin Plastic DIP 470 16-Pin Narrow SOIC and TSSOPd 640 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. SCHEMATIC DIAGRAM (Typical Channel) V+ SX VL Level Shift/ Drive INX VV+ DX GND V- Figure 1. www.vishay.com 2 Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 DG211B, DG212B Vishay Siliconix SPECIFICATIONS Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance RDS(on) Match Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve VANALOG RDS(on) RDS(on) VD = ± 10 V, IS = 1 mA D Suffix - 40 °C to 85 °C Temp.a Min.b Full Room Full Room Room Full Room Full Room Full - 15 - 0.5 -5 - 0.5 -5 - 0.5 - 10 2.4 Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V Drain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V Drain On Leakage Current ID(on) VS = VD = ± 14 V Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF VS = 10 V see figure 2 Q CL = 1000 pF, Vgen = 0 V, Rgen = 0  Charge Injection Full 45 ± 0.01 ± 0.01 ± 0.02 Unit 15 85 100 V 0.5 5 0.5 5 0.5 10 0.8 -1 1 5  300 Room 200 Room 1 Room 5 CS(off) Drain-Off Capacitance CD(off) Room 5 Channel-On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16 Off Isolation OIRR 90 XTALK CL = 15 pF, RL = 50  VS = 1 VRMS, f = 100 kHz Room Channel-to-Channel Crosstalk Room 95 nA V µA pF Room Source-Off Capacitance VS = 0 V, f = 1 MHz Max.b 2 Room CIN Typ.c ns pC pF dB Power Supply - 10 - 50 IL Room Full Room Full Room Full VOP Full ± 4.5 Positive Supply Current I+ Negative Supply Current I- Logic Supply Current VIN = 0 or 5 V Power Supply Range for Continuous Operation Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 10 50 µA 10 50 ± 22 V www.vishay.com 3 DG211B, DG212B Vishay Siliconix SPECIFICATIONS (for Single Supply) Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b 0 RDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full Dynamic Characteristics Turn-On Time tON 300 tOFF VS = 8 V see figure 1 Room Turn-Off Time Room 200 Q CL = 1 nF, Vgen = 6 V, Rgen = 0  Room Parameter Symbol Analog Switch Analog Signal Ranged Drain-Source On-Resistance D Suffix - 40 °C to 85 °C VANALOG Charge Injection Typ.c 90 Max.b Unit 12 160 200 V 4  ns pC Power Supply - 10 - 50 IL Room Full Room Full Room Full VOP Full + 4.5 Positive Supply Current I+ Negative Supply Current I- Logic Supply Current VIN = 0 or 5 V Power Supply Range for Continuous Operation 10 50 µA 10 50 + 25 V Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 110 100 100 90 R DS(on) - Drain-Source On-Resistance (Ω) R DS(on) - Drain-Source On-Resistance (Ω) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 90 ±5V 80 70 ± 10 V 60 50 ± 15 V 40 ± 20 V 30 20 10 - 20 - 16 - 12 www.vishay.com 4 -8 -4 0 4 8 12 16 20 V+ = 15 V V- = - 15 V 80 70 60 125 °C 85 °C 50 40 25 °C 30 - 55 °C 20 10 0 - 15 - 10 -5 0 5 10 VD - Drain Voltage (V) VD - Drain Voltage (V) RDS(on) vs. VD and Power Supply Voltages RDS(on) vs. VD and Temperature 15 Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 DG211B, DG212B Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 V+ = 5 V 225 V+ = 22 V V- = - 22 V TA = 25 °C 30 200 20 175 150 I S, I D - Current (pA) RDS(on) - Drain-Source On-Resistance (Ω) 250 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 - 10 - 20 50 - 30 25 - 40 - 20 0 0 2 4 6 8 10 12 14 16 - 15 VD - Drain Voltage (V) -5 0 5 10 15 20 VANALOG - Analog V oltage (V) RDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage 30 1 nA V+ = 15 V V- = - 15 V VS, V D = ± 14 V 20 100 pA 10 Q - Charge (pC) I S, ID - Current - 10 IS(off), ID(off) V+ = 15 V V- = - 15 V 0 V+ = 12 V V- = 0 V - 10 10 pA - 20 1 pA - 55 - 35 - 15 5 25 45 65 85 - 30 - 15 105 125 - 10 -5 0 5 10 15 VANALOG - Analog Voltage (V) Temperature (°C) QS, QD - Charge Injection vs. Analog Voltage Leakage Current vs. Temperature 120 V+ = + 15 V V- = - 15 V 110 100 OIRR (dB) 90 RL = 50 Ω 80 70 60 50 40 10K 100K 1M 10M f - Frequency (Hz) Off Isolation vs. Frequency Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com 5 DG211B, DG212B Vishay Siliconix TEST CIRCUITS + 15 V V+ S VS = + 2 V D 3V Logic Input VO tr < 20 ns tf < 20 ns 50 % 0V tOFF IN V- GND CL 35 pF RL 1 kΩ 3V 90 % Switch Output - 15 V VO tON RL VO = VS RL + rDS(on) Figure 2. Switching Time + 15 V C + 15 V C V+ V+ S VS VO D S1 VS Rg = 50 Ω RL IN GND V- 0 V, 2.4 V S2 NC C - 15 V Off Isolation = 20 log C = RF bypass VO X TALK Isolation = 20 log Figure 3. Off Isolation V- C VS VO - 15 V Figure 4. Channel-to-Channel Crosstalk ΔVO + 15 V VO V+ S D IN VO CL 1000 pF 3V GND RL GND VS VO D2 IN2 0 V, 2.4 V Vg 50 Ω IN1 0V, 2.4 V Rg D1 Rg = 50 Ω INX ON OFF ON VΔVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x ΔV O - 15 V Figure 5. Charge Injection www.vishay.com 6 Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 DG211B, DG212B Vishay Siliconix APPLICATIONS + 15 V +5V VL V+ Logic Input Low = Sample High = Hold 1 kΩ + 15 V DG211B + 15 V - 15 V - J202 LM101A VIN 2N4400 + 5 MΩ 50 pF 200 W 5.1 MΩ VOUT 1000 pF V- J507 J500 30 pF - 15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 µs = 1 µs = 5 mV = 5 mV/s - 15 V Figure 6. Sample-and-Hold + 15 V 160 V1 C4 fC3 Select TTL Control 150 pF 120 C3 1500 pF Voltage Gain - dB fC4 Select C2 fC2 Select 0.015 µF fC1 Select 0.15 µF C1 80 fC1 fC2 fC3 DG211B fL2 fL1 0 V- fC4 40 fL3 fL4 GND - 40 1 10 100 - 15 V R3 = 1 MΩ + 15 V - 15 V R1 = 10 kΩ LM101A + R2 = 10 kΩ 10K 100K 1M VOUT R3 AL (Voltage Gain Below Break Frequency) = = 100 (40 dB) R1 1 fC (Break Frequency) = 2πR3CX fL (Unity Gain Frequency) = 30 pF 1K Frequency - Hz Max. Attenuation = R DS(on) 10 kΩ ≈ 1 2πR1CX - 47 dB Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com 7 DG211B, DG212B Vishay Siliconix APPLICATIONS VIN1 +5V + 15 V 30 pF VL V+ + 15 V + LM101A VIN2 - + 15 V DG419 - 15 V RF1 18 kΩ RF2 9.9 kΩ RF3 100 kΩ RG1 2 kΩ RG2 100 Ω RG3 100 Ω DG212B CH GND V- - 15 V Gain = RF + RG RG Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- GND Logic High = Switch On - 15 V Figure 8. A Precision Amplifier with Digitally Programable Input and Gains Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70040. www.vishay.com 8 Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000