DG213
Vishay Siliconix
Quad Complementary CMOS Analog Switch
DESCRIPTION
FEATURES
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Vishay Siliconix’ proprietary highvoltage silicon gate CMOS process, resulting in lower onresistance, lower leakage, higher speed, and lower power
consumption.
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± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - rDS(on): 45 Ω
Low leakage - ID(on): 20 pA
Single supply operation possible
Extended temperature range
Fast switching - tON: 85 ns
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
This analog switch was designed for a wide variety of
general purpose applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. These switches can handle
up to
± 22 V, and have an improved continuous current
rating of 30 mA. An epitaxial layer prevents latchup.
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
For additional information, please refer to Application Note
AN208 (FaxBack document #70606).
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Low charge injection - Q: 1 pC
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Low cost
APPLICATIONS
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Industrial instrumentation
Test equipment
Communications systems
Computer peripherals
Portable instruments
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic
SW1, SW4
SW2, SW3
0
OFF
ON
1
ON
OFF
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
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1
DG213
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
Standard Part Number
Lead (Pb)-free Part Number
16-Pin Plastic DIP
DG213DJ
DG213DJ-E3
16-Pin Narrow SOIC
DG213DY
DG213DY-T1
DG213DY-E3
DG213DY-T1-E3
16-Pin TSSOP
DG213DQ
DG213DQ-T1
DG213DQ-E3
DG213DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Voltages Referenced V+ to VGND
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Digital Inputsa VS, VD
Current, Any Terminal
30
Peak Current (Pulsed at 1 ms, 10 % duty cycle max.)
100
Storage Temperature
Power Dissipationb
Unit
44
- 65 to 125
16-Pin Plastic DIPc
470
16-Pin Narrow SOICd
640
16-Pin TSSOP
d
V
mA
°C
mW
500
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
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Document Number: 70662
S-80263-Rev. G, 11-Feb-08
DG213
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, VL = 5 V,
Parameter
Symbol
VIN = 2.4 V, 0.8 Ve
D Suffix
- 40 °C to 85 °C
Temp.a
Min.c
Full
V-
Typ.b
Max.c
Unit
V+
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
VANALOG
rDS(on)
ΔrDS(on)
VD = ± 10 V, IS = 1 mA
Room
Full
Room
Room
Full
Room
Full
Room
Full
- 0.5
-5
- 0.5
-5
- 0.5
- 10
2.4
Source Off Leakage Current
IS(off)
VS = ± 14 V, VD = ± 14 V
Drain Off Leakage Current
ID(off)
VD = ± 14 V, VS = ± 14 V
Drain On Leakage Currentf
ID(on)
VS = VD = 14 V
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Input Current
Input Capacitance
IINL or IINH
VINH or VINL
CIN
Full
45
1
± 0.01
± 0.01
± 0.02
60
85
2
0.5
5
0.5
5
0.5
10
0.8
-1
1
5
Room
tON
85
130
tOFF
VS = 10 V
See Figure 2
Room
Turn-Off Time
Room
55
100
tD
VS = 10 V, See Figure 3
Room
Q
CL = 1000 pF, Vg = 0 V, Rg = 0 Ω
Charge Injection
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
Off-Isolation
OIRR
Channel-to-Channel Crosstalk
XTALK
VS = 0 V, f = 1 MHz
15
nA
V
µA
pF
Dynamic Characteristics
Turn-On Time
Break-Before-Make Time Delay
Ω
ns
25
Room
1
Room
5
Room
5
VD = VS = 0 V, f = 1 MHz
Room
16
CL = 15 pF, RL = 50 Ω
VS = 1 VRMS, f = 100 kHz
Room
90
Room
95
pC
pF
dB
Power Supply
Positive Supply Current
I+
VIN = 0 or 5 V
Negative Supply Current
I-
Logic Supply Current
IL
Power Supply Range for
Continuous Operation
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
VOP
Room
Full
Room
Full
Room
Full
1
5
-1
-5
Full
±3
µA
1
5
± 22
V
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DG213
Vishay Siliconix
SPECIFICATIONS for Unipolar Supply
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, VL = 5 V,
Parameter
D Suffix
- 40 °C to 85 °C
VIN = 2.4 V, 0.8 Ve
Temp.a
Min.c
VANALOG
Full
V-
rDS(on)
VD = 3 V, IS = 1 mA
Symbol
Typ.b
Max.c
Unit
V+
V
Room
Full
90
110
140
Ω
Room
125
200
Room
45
100
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
See Figure 2
Break-Before-Make Time Delay
tD
VS = 8 V, See Figure 3
Room
Charge Injection
Q
CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω
Room
50
ns
80
pC
4
Power Supply
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
VIN = 0 or 5 V
Power Supply Range for
Continuous Operation
VOP
Room
Full
Room
Full
Room
Full
1
5
-1
-5
Full
+3
µA
1
5
+ 40
V
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70662
S-80263-Rev. G, 11-Feb-08
DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
110
r DS(on) - Drain-Source On-Resistance (Ω)
100
r DS(on) - Drain-Source On-Resistance (Ω)
100
90
±5V
80
70
± 10 V
60
50
± 15 V
40
± 20 V
30
20
-8
-4
0
4
8
12
16
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
- 15
10
- 20 - 16 - 12
V+ = 15 V
V- = ± 15 V
90
20
- 10
-5
rDS(on) vs. VD and Power Supply Voltages
10
15
40
V- = 0 V
VL = 5 V
5V
250
V+ = 22 V
V- = - 22 V
TA = 25 °C
30
20
200
IS, I D - Current (pA)
r DS(on) - Drain-Source On-Resistance (Ω)
5
rDS(on) vs. VD and Temperature
300
7V
150
10 V
100
12 V
ID(on)
10
IS(off), ID(off)
0
- 10
- 20
50
- 30
0
0
2
4
6
8
10
- 40
- 20
12
- 15
VD - Drain V oltage (V)
- 10
-5
0
5
10
15
20
VANALOG - Analog V oltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Analog Voltage
1 nA
30
V+ = 15 V
V- = - 15 V
VS, VD = ± 14 V
20
100 pA
Q - Charge (pC)
I S,I D - Current
0
VD - Drain Voltage (V)
VD - Drain V oltage (V)
IS(off), ID(off)
10 pA
10
V+ = 15 V
V- = - 15 V
0
V+ = 12 V
V- = 0 V
- 10
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
85
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
105 125
- 30
- 15
- 10
-5
0
5
10
15
VANALOG - Analog V oltage (V)
QS, QD - Charge Injection vs. Analog Voltage
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DG213
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
120
V+ = + 15 V
V- = - 15 V
110
100
OIRR (dB)
90
RL = 50 Ω
80
70
60
50
40
10 k
100 k
1M
10 M
f - Frequency (Hz)
Off Isolation vs. Frequency
SCHEMATIC DIAGRAM Typical Channel
V+
SX
VL
Level
Shift/
Drive
V–
V+
INX
DX
GND
V–
Figure 1.
TEST CIRCUITS
+ 15 V
V+
VS = + 2 V
D
S
VO
Logic
Input
3V
tr < 20 ns
tf < 20 ns
50 %
0V
tOFF
IN
3V
GND
V-
CL
35 pF
RL
300 Ω
90 %
Switch
Output
- 15 V
VO = VS
VO
tON
RL
RL + rDS(on)
Figure 2. Switching Time
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Document Number: 70662
S-80263-Rev. G, 11-Feb-08
DG213
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
3V
Logic
Input
VL
S1
VS1
D1
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
0V
VS1
VO1
VO1
IN1
VS2
50 %
V+
RL2
300 Ω
0V
VS2
VO2
CL1
35 pF
CL2
35 pF
90 %
0V
Switch
Output
tD
tD
- 15 V
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
C
+ 15 V
+ 15 V
V+
S1
VS
C
D1
Rg = 50 Ω
V+
S
VS
0 V, 2.4 V
Rg = 50 Ω
S2
NC
RL
IN
0 V, 2.4 V
V-
VO
D2
RL
IN2
0 V, 2.4 V
GND
50 Ω
IN1
VO
D
C
GND
V-
C
C = RF bypass
Off Isolation = 20 log
XTA LK Isolation = 20 log
- 15 V
VS
VS
VO
Figure 4. Off Isolation
Figure 5. Channel-to-Channel Crosstalk
+ 15 V
Rg
ΔVO
VO
V+
S
D
IN
Vg
- 15 V
VO
CL
1000 pF
3V
GND
VO
INX
ON
OFF
ON
VΔVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x ΔVO
- 15 V
Figure 6. Charge Injection
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
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DG213
Vishay Siliconix
APPLICATIONS
+ 15 V
+5V
+ 15 V
VIN1
VOUT
VIN2
CMOS Logic
Input Select
High = V IN1
Low = V IN2
- 15 V
CMOS Logic
Gain Select
High = 10x
Low = 1 x
1x
10x
DG213
GND
20 kΩ
180 kΩ
- 15 V
Figure 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70662.
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Document Number: 70662
S-80263-Rev. G, 11-Feb-08
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
