DG2517, DG2518
Vishay Siliconix
3-Ω, High Bandwidth, Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2517, DG2518 are low-voltage dual single-pole/
double-throw monolithic CMOS analog switches. Designed
to operate from 1.8 V to 5.5 V power supply, the DG2517,
DG2518 achieves a bandwidth of 242 MHz while providing
low on-resistance (3 Ω), excellent on-resistance matching
(0.2 Ω) and flatness (1 Ω) over the entire signal range.
The DG2517, DG2518 offers the advantage of high linearity
that reduces signal distortion, making ideal for audio, video,
and USB signal routing applications. Additionally, the
DG2517, DG2518 are 1.6 V logic compatible within the full
operation voltage range.
Built on Vishay Siliconix’s proprietary sub-micron highdensity process, the DG2517, DG2518 brings low power
consumption at the same time as reduces PCB spacing with
the MSOP10 and DFN10 packages.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. The DFN
package has a nickel-palladium-gold device termination and
is represented by the lead (Pb)-free "-E4" suffix. The MSOP
package uses 100 % matte Tin device termination and is
represented by the lead (Pb)- free "-E3" suffix. Both the
matte Tin and nickel-palladium-gold device terminations
meet all JEDEC standards for reflow and MSL ratings.
• 1.8 V to 5.5 V single supply operation
• Low RON: 3 Ω at 4.2 V
• 242 MHz, - 3 dB bandwidth
• Low off-isolation, - 51 dB at 10 MHz
• + 1.6 V logic compatible
RoHS
COMPLIANT
BENEFITS
•
•
•
•
High linearity
Low power consumption
High bandwidth
Full rail signal swing range
APPLICATIONS
•
•
•
•
•
•
•
USB/UART signal switching
Audio/video switching
Cellular phone
Media players
Modems
Hard drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2517
IN1
1
10
COM1
NO1
2
9
NC1
GND
3
8
V+
Logic
NC1 and NC2
NO1 and NO2
NO2
4
7
NC2
0
ON
OFF
6
COM2
1
OFF
ON
IN2
5
TRUTH TABLE
Top View
DG2518
IN1
1
10
COM1
NC1
2
9
NO1
GND
3
8
V+
NC2
4
7
NO2
IN2
5
6
COM2
ORDERING INFORMATION
Temp. Range
Package
MSOP-10
- 40 °C to 85 °C
DFN-10
Part Number
DG2517DQ-T1-E3
DG2518DQ-T1-E3
DG2517DN-T1-E4
DG2518DN-T1-E4
Top View
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
1
DG2517, DG2518
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference to GND
V+
IN, COM, NC, NOa
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Limit
MSOP-10c
DFN-10d
Power Dissipation (Packages)b
Unit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
- 65 to 150
320
1191
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Analog Signal Ranged
VNO, VNC,
VCOM
On-Resistance
RON Flatness
RON Match Between Channels
Switch Off Leakage Currentf
RON
RON
Flatness
ΔRON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve
Temp.
a
Full
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
V+ = 2.7 V, VCOM = 1.5, 2 V
INO/NC = 10 mA
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
V+ = 3.6 V, VNO, VNC = 0.3 V/ 3 V
VCOM = 3 V/0.3 V
V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Limits
- 40 °C to 85 °C
Typ.c
Max.b
Min.b
0
V+
3.2
1.0
0.1
-1
- 10
-1
- 10
-1
- 10
4.5
5.0
1.4
16
0.3
0.4
1
10
1
10
1
10
Unit
V
Ω
nA
Digital Control
Input High Voltaged
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injectiond
- 3 dB Bandwidth
td
QINJ
BW
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(off)
CNC(off)
CNO(on)
CNC(on)
Full
Full
Full
Full
V+ = 2.7 V, VNO or VNC = 1.5 V
RL = 300 Ω, CL = 35 pF
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω
0 dBm, CL = 5 pF, RL = 50 Ω
f = 1 MHz
RL = 50 Ω, CL = 5 pF
f = 10 MHz
f = 1 MHz
RL = 50 Ω, CL = 5 pF
f = 10 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
1.4
0.5
4
1
1
15
10
30
50
25
35
V
pF
µA
ns
1
1
242
- 71
- 51
- 73
- 55
8
8
35
35
pC
MHz
dB
pF
Power Supply
I+
Full
0.01
1.0
µA
Power Supply Current
VIN = 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
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Document Number: 74333
S-82589-Rev. B, 27-Oct-08
DG2517, DG2518
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 Ve
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
On-Resistance
RON Flatness
RON Match Between Channels
Switch Off Leakage Current
RON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
3
4.0
4.3
RON
Flatness
V+ = 4.2 V, VCOM = 1, 2, 3.5 V
INO/NC = 10 mA
Room
Full
1.1
1.4
1.6
ΔRON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VCOM = VNO, VNC = 1 V/4.5 V
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
2.0
Ω
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Cin
Input Capacitance
IINL or IINH
Input Current
Full
VIN = 0 V or V+
Full
V
0.8
4
1
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
V+ = 4.2 V, VNO or VNC = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
12
25
45
Room
Full
8
20
30
td
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Full
d
QINJ
CL = 1 nF, VGEN = 2.5 V, RGEN = 0 Ω
Room
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Break-Before-Make Time
Charge Injection
Off-Isolationd
Crosstalk
OIRR
d
XTALK
Source-Off Capacitanced
Channel-On Capacitance
d
RL = 50 Ω, CL = 5 pF
RL = 50 Ω, CL = 5 pF
f = 1 MHz
1
2
pC
Room
242
MHz
Room
- 71
f = 10 MHz
Room
- 51
f = 1 MHz
Room
- 73
Room
- 55
CNO(off)
Room
8
CNC(off)
Room
8
Room
35
Room
35
CNO(on)
f = 10 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on)
ns
dB
pF
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
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DG2517, DG2518
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
10
T = 25 °C
INO/NC = 10 mA
V+ = 1.8 V
9
4
R ON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
8
7
6
5
V+ = 2.7 V
4
3
2
V+ = 2.7 V
85 °C
25 °C
- 40 °C
3
2
V+ = 4.2 V
85 °C
1
V+ = 4.2 V
25 °C
1
- 40 °C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. VCOM and Supply Voltage
10 000
10 mA
1000
V+ = 5 V
VIN = 0 V
I+ - Supply Current (A)
I+ - Supply Current (pA)
V+ = 5.5 V
1 mA
100
100 µA
10 µA
1 µA
100 nA
10
10 nA
1
- 60
1 nA
- 40
- 20
0
20
40
60
80
10
100
100
1K
10K
1M
100K
10M
Input Switching Frequency (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
1000
80
V+ = 5.5 V
60
Leakage Current (pA)
Leakage Current (pA)
ICOM(on)
100
INO(off), INC(off)
10
40
20
ICOM(on)
0
INC(off), INO(off)
- 20
- 40
ICOM(off)
ICOM(off)
1
- 40
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4
- 15
- 60
10
35
60
85
- 80
0.0
1.0
2.0
3.0
4.0
Temperature (°C)
VCOM, VNO, VNC - Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
5.0
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
DG2517, DG2518
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
-2
tON, V+ = 2.7 V
14
12
-4
tON, V+ = 4.2 V
Loss (dB)
t ON / t OFF - Switching Time (µs)
16
0
RL = 300 Ω
10
8
-6
-8
6
tOFF, V+ = 2.7 V
4
V+ = 5 V
RL = 50 Ω
tOFF, V+ = 4.2 V
- 10
2
0
- 60
- 12
- 40
- 20
0
20
40
60
80
100
100K
1M
Temperature (°C)
1G
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss vs. Frequency
0
40
V+ = 5 V
RL = 50 Ω
- 10
20
Q - Charge Injection (pC)
- 20
OIRR, X TALK (dB)
100M
10M
- 30
- 40
- 50
OIRR
- 60
- 70
0
V+ = 5 V
- 20
V+ = 3 V
- 40
XTALK
- 60
- 80
- 90
100K
- 80
1M
100M
10M
1G
0
1
2
3
4
5
VCOM - Analog Voltage (V)
Frequency (Hz)
Off-Isolation and Crosstalk vs. Frequency
Charge Injection vs. Analog Voltage
VT - Switching Threshold (V)
2.5
2
1.5
1
0.5
0
1.5
2
2.5
3
3.5
4
4.5
5
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
5
DG2517, DG2518
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
NO or NC
Switch
Input
VINL
Switch Output
COM
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x VOUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT
VCOM
RL
RL
R ON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
NC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 74333
S-82589-Rev. B, 27-Oct-08
DG2517, DG2518
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
0 V, 2.0 V
Meter
COM
0 V, 2.0 V
COM
RL
IN
NC or NO
GND
GND
Analyzer
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO NC
Figure 4. Off-Isolation
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74333.
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
7
Package Information
Vishay Siliconix
MSOP:
10−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
(N/2) Tips)
2X
5
A B C 0.20
N N-1
0.60
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
E
1 2
0.50
N/2
0.60
0.08 M C B S
b
A S
7
Top View
b1
e1
With Plating
e
A
See Detail “B”
c1
0.10 C
-H-
A1
D
6
Seating Plane
c
Section “C-C”
Scale: 100/1
(See Note 8)
Base Metal
-A-
3
See Detail “A”
Side View
0.25
BSC
C
Parting Line
0.07 R. Min
2 Places
C
ς
A2
Seating Plane
0.05 S
E1
-B-
L 4
T
-C-
3
0.95
End View
Detail “A”
(Scale: 30/1)
NOTES:
1.
2.
Dimensioning and tolerances per ANSI.Y14.5M-1994.
3.
Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4.
Dimension is the length of terminal for soldering to a substrate.
5.
Terminal positions are shown for reference only.
6.
Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7.
N = 10L
Die thickness allowable is 0.203"0.0127.
The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8.
Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9.
Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
Document Number: 71245
12-Jul-02
MILLIMETERS
Dim
Min
Nom
Max
A
A1
A2
b
b1
c
c1
D
E
E1
e
e1
L
N
T
-
-
1.10
0.05
0.10
0.15
0.75
0.85
0.95
0.17
-
0.27
8
0.17
0.20
0.23
8
0.13
-
0.23
0.15
0.18
0.13
3.00 BSC
Note
3
4.90 BSC
2.90
3.00
3.10
3
0.70
4
0.50 BSC
2.00 BSC
0.40
0.55
10
0_
4_
5
6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
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1
Package Information
Vishay Siliconix
DFN-10 LEAD (3 X 3)
D
e
Terminal Tip
3
D/2
3
NXb
0.10
M
C
A
B
5
0.15
C
E2
NXL
Exposed Pad
Index Area
D/2 E/2
D2
0.15
5
BOTTOM VIEW
// 0.10
E/2
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
2x
Index Area
D/2 E/2
C
E
2x
TOP VIEW
C
A
4
NX
0.08
SEATING
PLANE
C
A1
A3
SIDE VIEW
MILLIMETERS
NOTES:
1.
All dimensions are in millimeters and inches.
2.
N is the total number of terminals.
3.
4.
5.
Dimension b applies to metallized terminal and is measured
between 0.15 and 0.30 mm from terminal tip.
Coplanarity applies to the exposed heat sink slug as well as the
terminal.
The pin #1 identifier may be either a mold or marked feature, it
must be located within the zone iindicated.
INCHES
Dim
Min
Nom
Max
Min
Nom
Max
A
0.80
0.90
1.00
0.031
0.035
0.039
A1
0.00
0.02
0.05
0.000
0.001
0.002
A3
b
D
D2
E
E2
e
L
0.20 BSC
0.18
0.23
0.008 BSC
0.30
0.007
2.48
0.087
3.00 BSC
2.20
2.38
1.64
0.40
0.094
0.098
0.118 BSC
1.74
0.059
0.50 BSC
0.30
0.012
0.118 BSC
3.00 BSC
1.49
0.009
0.065
0.069
0.020 BSC
0.50
0.012
0.016
0.020
*Use millimeters as the primary measurement.
ECN: S-42134—Rev. A, 29-Nov-04
DWG: 5943
Document Number: 73181
29-Nov-04
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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to the warranty expressed therein.
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Revision: 01-Jan-2022
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Document Number: 91000
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