DG2522DN-T1-E4

DG2522 Vishay Siliconix Low Voltage, Fault Protection, SP3T Analog Switch (3:1 Multiplexer/Demultiplexer) DESCRIPTION FEATURES The DG2522 is a low on-resistance SP3T analog switch design to operation from 1.6 V to 5.5 V. The DG2522 switches signals in either direction with amplitudes up to V+. Protection circuit is built in to isolate the signals if any of them swings above V+. It guaranteed low leakage level for isolation in power down mode. Built on Vishay Siliconix’s sub-micro CMOS technology, the DG2522 achieves switch on-resistance of 0.8 Ω at 4.5 V V+ with 0.6 Ω flatness. It has superior 0.008 % THD (total harmonic distortion) over frequency of 20 Hz to 20 kHz. It provides - 59 dB off-Isolation, - 65 dB crosstalk at 1 MHz, and 105 MHz - 3 dB bandwidth. The select pin of the control logic input can tolerate voltages above V+ up to 5.5 V. Logic high 1.8 V is guaranteed over the full V+ range that makes it compatible with many low voltage digital control circuits. The features of ultra small package size, wide V+ range, low on-resistance, low logic threshold, and switch isolation under fault condition make it an ideal device for battery operated devices to handle signals such as audio, video, data stream, and other high accuracy signals. • • • • • • • Isolation at V+ = 0 V and signal above V+ Logic input tolerates up to 5.5 V 1.6 V to 5.5 V operation voltage range Guaranteed 1.8 V VTH(high) at V+ = 4.5 V 0.008 % total harmonic distortion Low switch on-resistance 300 mA latch up current per JESD78 RoHS COMPLIANT BENEFITS • Ultra small miniQFN8 package of 1.4 mm x 1.4 mm x 0.55 mm • High fidelity audio switch • Reed relay replacement • Low power consumption APPLICATIONS • • • • • • • The DG2522 comes in a small miniQFN-8 lead package of 1.4 mm x 1.4 mm x 0.55 mm. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device termination and is 100 % RoHS compliant. Cellular phones and PDAs GPS and portable media players Modems and wireless cards Computers peripherals Communication and network circuits Low voltage data acquisition systems Portable instrumentation FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION COM IN1 IN2 DG2522 miniQFN - 8L 7 6 5 Control V+ 8 4 GND 1 2 3 S0 S1 S2 Px Top View Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 Pin 1 Device marking: Px for DG2522 x = Date/Lot Traceability Code www.vishay.com 1 DG2522 Vishay Siliconix TRUTH TABLE DG2522 IN1 (Pin 6) IN2 (Pin 5) 0 0 COM diconnect 1 0 COM (Pin 7) = S0 (Pin 1) 0 1 COM (Pin 7) = S1 (Pin 2) 1 1 COM (Pin 7) = S2 (Pin 3) Function ORDERING INFORMATION Temp. Range Package Part Number - 40 °C to 85 °C miniQFN-8L DG2522DN-T1-E4 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Reference to GND V+ IN, COM, SXa Limit - 0.3 to 6.0 - 0.3 to (V+ + 0.3) 30 ± 300 ± 500 - 65 to 150 190 Unit V Current (Any terminal except SX or COM) mA Continuous Current (SX or COM) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (D Suffix) °C Power Dissipation (Packages)b miniQFN-8Lc mW Notes: a. Signals on S0, S1, S2 and COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.4 mW/°C above 70 °C. www.vishay.com 2 Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 DG2522 Vishay Siliconix SPECIFICATIONS V+ = 5 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 %,VIN = 0.6 V or 1.8 Ve Limits - 40 °C to 85 °C Temp.a Min.b RDS(on) Full 0 V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V Room Typ.c Max.b Unit V+ V 0.8 1.1 Analog Switch Analog Signal Ranged On-Resistance Vanalog RDS(on) RON Match RON Resistance Flatness Switch Off Leakage Current Channel-On Leakage Current V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V Full 1.5 ΔRON V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V Room 0.1 RON flatness V+ = 4.5 V, ISX = 100 mA, VCOM = 0.5 V, 2.5 V Room ISX(off) ICOM(off) ICOM(on) Power Down Leakage V+ = 5.5 V, VSX = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 4.3 V, VSX = VCOM = 4.5 V/1 V V+ = 0 V, VSX = 0 V/5.5 V, VCOM = 5.5 V/0 V 0.2 0.6 Room - 20 20 Full - 120 120 Room - 20 20 Full - 120 120 Room Full - 20 20 - 120 120 Room -1 Full - 25 0.001 Ω 1 25 nA µA Digital Control Input High Voltage VINH Input Low Voltage VINL V+ = 2.7 V V+ = 4.5 V Full 1.6 Full 1.8 CIN f = 1 MHz, VINx = 0 V Room IINL or IINH VIN = 0 or V+ Full Break-Before-Make Timee tBBM V+ = 5.0 V, VSX = V+, RL = 50 Ω, CL = 35 pF (see figure 2) Room Enable Turn-On Timee tON Enable Turn-Off Timee tOFF Input Capacitance Input Current V Full 0.6 5 -1 pF 1 µA Dynamic Characteristics Charge Injectiond Off-Isolationd Crosstalkd - 3 dB Bandwidth d Source Off Capacitanced Full 8 14 Room V+ = 5.0 V, VSX = V+, RL = 50 Ω, CL = 35 pF (see figure 1) 53 Full Room 40 Full ns 60 70 Q CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz XTALK RL = 50 Ω, CL = 5 pF, f = 1 MHz Room BW RL = 50 Ω, CL = 5 pF Room 105 CSX(off) f = 1 MHz, VNX = 0 V Room 17 Room 27 pC - 59 dB - 64 Drain Off Capacitanced CCOM(off) f = 1 MHz, VCOM = 0 V Room 51 Drain On Capacitanced CCOM(on) f = 1 MHz, VCOM = VNX = 0 V Room 70 THD V+ = 5 V, VIN = 1 VRMS, RL = 600 Ω f = 20 Hz to 20 kHz Room 0.008 VIN = 0 or V+ Full Total Harmonic Distortiond 75 85 MHz pF % Power Supply Power Supply Range V+ Power Supply Current I+ 1.6 5.5 V 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 www.vishay.com 3 DG2522 Vishay Siliconix 5.0 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 V+ = 1.6 V ISX = 100 mA 4.5 4.0 V+ = 1.6 V V+ = 2.3 V V+ = 3.0 V V+ = 4.5 V V+ = 5.5 V RON - On-Resistance (Ω) RON - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 40 °C 3.5 + 25 °C + 85 °C 3.0 2.5 2.0 1.5 1.0 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.0 5.5 0 0.2 0.4 VD - Analog Voltage (V) 1 1.2 1.4 1.6 5.0 5.0 V+ = 2.3 V ISX = 100 mA 4.5 4.5 V+ = 3.0 V ISX = 100 mA 4.0 3.5 3.0 2.5 + 85 °C + 25 °C - 40 °C 2.0 1.5 RON - On-Resistance (Ω) 4.0 3.5 3.0 2.5 + 25 °C 0.5 0.5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.0 0.0 2.2 0.3 0.6 0.9 VD - Analog Voltage (V) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 5.0 5.0 4.5 - 40 °C 1.5 1.0 0 + 85 °C 2.0 1.0 0.0 V+ = 4.5 V ISX = 100 mA 4.5 V+ = 5.5 V ISX = 100 mA 4.0 RON - On-Resistance (Ω) 4.0 RON - On-Resistance (Ω) 0.8 RON vs. Analog Voltage and Temperature RON vs. VD and Single Supply Voltage RON - On-Resistance (Ω) 0.6 VD - Analog Voltage (V) 3.5 3.0 2.5 2.0 + 85 °C 1.5 - 40 °C + 25 °C 3.5 3.0 2.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 4 4.5 + 85 °C + 25 °C - 40 °C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 DG2522 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 000 10 mA V+ = 4.3 V V+ = 5.5 V 1 mA 10 000 ICOM(ON) Leakage Current (pA) I+ - Supply Current (A) V+ = 3.6 V 100 µA V+ = 3.0 V 10 µA 1 µA 100 nA V+ = 2.3 V 1000 ICOM(OFF) 100 ISX(OFF) 10 10 nA V+ = 1.6 V 1 1 nA 100 pA 10 100 1K 10K 100K 1M 0.1 - 60 - 40 - 20 10M 0 80 100 120 140 V+ = 5.0 V -1 -2 -3 VIH Gain (dB) VT - Switching Threshold (V) 60 0 VIL -4 -5 -6 -7 -8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1 10 100 1000 10 000 Frequency (MHz) V+ - Supply Voltage (V) Gain vs. Frequency Switching Threshold vs. Supply Voltage 0 0 - 20 - 30 - 30 - 40 - 40 Crosstalk - 20 - 50 - 60 - 50 - 60 - 70 - 70 - 80 - 80 - 90 - 90 - 100 - 100 10 1 100 Frequency (MHz) Off Isolation vs. Frequency Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 V+ = 5.0 V - 10 V+ = 5.0 V - 10 Off Isolation (dB) 40 Leakage Current vs. Temperature Supply Current vs. Input Switching Frequency 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 1.5 20 Temperature (°C) Input Switching Frequency (Hz) 1000 1 10 100 1000 Frequency (MHz) Crosstalk vs. Frequency www.vishay.com 5 DG2522 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ tr < 5 ns tf < 5 ns 50 % VINL Switch Output COM SX Switch Input VINH VOUT 0.9 x V OUT Logic Input Switch Output IN RL 50 Ω GND CL 35 pF 0V tON tOFF 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM (R L RL + R ON ) Figure 1. Switching Time V+ 50 % VIN1 0V S1 50 Ω V+ VS S0 IN1 S2 VS COM IN2 tr < 5 ns tf < 5 ns VCC V+ GND VO 50 Ω 90 % VO 35 pF 0V t BBM Figure 2. Break-Before-Make (DG2749) ΔVO V+ Rg Vg VIN = 0 - V+ VO INX V+ SX IN OFF COM ON OFF VO CL 1 nF GND INX OFF ON Q = ΔVO x CL OFF Figure 3. Charge Injection www.vishay.com 6 Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 DG2522 Vishay Siliconix TEST CIRCUITS V+ V+ SX IN 0 V, V+ COM RL GND Analyzer Off Isolation = 20 log VCOM VSX Figure 4. Off-Isolation V+ Network Analyzer V+ IN1 V+ VIN S2 IN2 Rg = 50 Ω Vg COM VOUT S0 50 Ω GND 50 Ω Crosstalk = 20 log VOUT VIN Figure 5. Crosstalk V+ V+ COM Meter IN 0 V, V+ SX HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Figure 6. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68831. Document Number: 68831 S09-0293-Rev. B, 23-Feb-09 www.vishay.com 7 Package Information Vishay Siliconix MINIQFN-8L CASE OUTLINE A D 6 5 5 6 7 L 7 b 4 8 4 E 8 L L L 1 2 3 3 2 1 A A1 c e MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.0197 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 REF 0.006 REF D 1.35 1.40 1.45 0.053 0.055 0.057 E 1.35 1.40 1.45 0.053 0.055 0.057 e L 0.40 BSC 0.35 0.40 0.016 BSC 0.45 0.014 0.016 0.018 ECN: C-08336-Rev. A, 05-May-08 DWG: 5964 Document Number: 68674 Revision: 05-May-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 8L 1.70 0.80 1.70 0.60 x6 0.125 typ. 0.25 x2 0.50 0.40 0.25 x6 Suggested Minimum Pad Dimensions in mm Document Number: 66555 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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