DG2612DX-T1-E3

DG2612, DG2613 Vishay Siliconix Low-Voltage, Low RON, SPDT Audio Switch with Negative Swing Capability DESCRIPTION FEATURES The DG2612, DG2613 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative signal swing capability. It is designed for low voltage applications. The DG2612, DG2613 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.0 Ω at 2.7 V), the DG2613 has a typical off isolation and crosstalk of - 67 dB and - 73 dB respectively. The DG2612, DG2613 is built on Vishay Siliconix’s low voltage process. Break-before-make is guaranteed. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100 % matte tin device terminations, the lead (Pb)-free “-E3” suffix is being used as a designator. • Low voltage operation (1.8 V to 5.5 V) • Low on-resistance - RON: 1.0 Ω at 2.7 V • High bandwidth BENEFITS • • • • Negative signal swing capability Shunt switch to eliminate switching noise Simplified design with direct DC coupling Space saving SC-89 package APPLICATIONS • • • • Cellular phones Portable multimedia players PDAs and hand-held devices Laptop computers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2612 TRUTH TABLE IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Device Marking: Dx Ax Pin 1 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) NC NO 0 ON OFF 1 OFF ON COMMERCIAL ORDERING INFORMATION x = Date/Lot Traceability Code DG2613 Logic Temp Range Package Part Number - 40 °C to 85 °C SC-89 (SOT-666) Lead (Pb)-free with Tape and Reel DG2612DX-T1-E3 DG2613DX-T1-E3 Top View Device Marking: Ex ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol V+ Reference GND - 0.3 to (V+ + 0.3) INa COM, NC, Limit Unit - 0.3 to + 6 NOa V (V+ - 6) to (V+ + 0.3) Continuous Current (NO, NC, COM pins) ± 150 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 mA Storage Temperature D Suffix - 65 to 150 °C Power Dissipation (Packages)b SC-89c 172 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.15 mW/°C above 70 °C. Document Number: 74339 S-83070-Rev. C, 29-Dec-08 www.vishay.com 1 DG2612, DG2613 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Full V+ - 5.5 Max.b Unit V+ V 1.4 1.6 0.1 Ω Analog Switch Analog Signal Ranged On-Resistance RON Matchd d RON Flatness Shunt Switch Resistance Switch Off Leakage Current VNO, VNC, VCOM RON ΔRON RON Flatness RSH INO(off) INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = - 1 V/0 V/1 V/2 V INO, INC = 10 mA Room Full Room 1.0 Room INO or INC = 10 mA, V+ = 2.7 V, DG2612 only V+ = 3.3 V, VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Full Room Full Room Full Room Full 0.3 150 -2 - 100 -2 - 100 -2 - 100 300 2 100 2 100 2 100 Ω nA Digital Control Input High Voltage VINH V+ = 1.8 V to 2.0 V 1.0 V+ = 2.7 V to 3.6 V 1.4 V+ = 4.2 V to 5.5 V V+ = 1.8 V to 2.0 V Input Low Voltage VINL Full 2.0 0.4 V+ = 2.7 V to 3.6 V 0.5 V+ = 4.2 V to 5.5 V Input Capacitance Input Current IINL or IINH 0.8 5 Full Cin V VIN = 0 or V+ Full VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full Room Full Room 1 pF 1 µA Dynamic Characteristics 34 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond (DG2613) QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω Room 2.4 Off-Isolationd OIRR - 61 Crosstalkd XTALK RL = 50 Ω, CL = 5 pF, f = 100 kHz DG2612 Room Room - 67 RL = 50 Ω, CL = 5 pF, f = 100 kHz DG2613 Room - 67 Room - 73 Room 36 Room 95 d OIRR NO, NC Off Capacitanced XTALK CNO(off) CNC(off) CON Off-Isolation Crosstalkd Channel-On Capacitanced Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 or V+, f = 1 MHz 10 4 ns 16 1.8 VIN = 0 or V+ 60 63 35 37 0.01 pC dB dB pF 5.5 V 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74339 S-83070-Rev. C, 29-Dec-08 DG2612, DG2613 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.0 2.4 T = 25 °C IS = 10 mA 2.2 1.8 V+ = 1.8 V 1.8 V+ = 2.0 V 1.6 V+ = 2.7 V V+ = 3.0 V V+ = 3.6 V 1.4 1.2 V+ = 2.7 V, IS = 10 mA + 85 °C + 25 °C - 40 °C 1.6 V+ = 4.5 V V+ = 5.0 V V+ = 5.5 V 1.0 0.8 0.6 RON - On-Resistance (Ω) R ON - On-Resistance (Ω) 2.0 1.4 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0.0 -4 -3 -2 -1 0 1 2 3 4 5 0.0 -3 6 -2 -1 VCOM - Analog Voltage (V) RON vs. VCOM and Supply Voltage 3 4 DG2613 VIN = 0 V I+ - Supply Current (pA) I+ - Supply Current (pA) 2 100 000 DG2612 VIN = 0 V 10 000 V+ = 5.5 V 1000 V+ = 3.6 V 10 000 V+ = 5.5 V 1000 V+ = 3.6 V 100 100 - 40 - 20 0 20 40 60 80 10 - 60 100 - 40 - 20 0 20 40 60 Temperature (°C) Temperature (°C) Supply Current vs. Temperature Supply Current vs. Temperature 100 000 80 100 40 V+ = 2.7 V tON, tOFF, - Switching Time (ns) 35 10 000 Leakage Current (pA) 1 RON vs. Analog Voltage and Temperature 100 000 10 - 60 0 VCOM - Analog Voltage (V) ICOM(on) 1000 INO(off) 100 ICOM(off) 10 tON V+ = 3.0 V 30 25 20 15 tOFF V+ = 3.0 V 10 5 1 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature Document Number: 74339 S-83070-Rev. C, 29-Dec-08 100 0 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Switching Time vs. Temperature and Supply Voltage www.vishay.com 3 DG2612, DG2613 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 10 LOSS LOSS 0 0 - 20 LOSS, OIRR, XTALK (dB) LOSS, OIRR, XTALK (dB) - 10 XTALK OIRR - 30 - 40 - 50 - 60 DG2612 V+ = 3.0 V RL = 50 Ω - 70 - 80 100K 1M 10M 100M - 10 - 20 - 30 XTALK - 40 OIRR - 50 - 60 DG2613 V+ = 3.0 V RL = 50 Ω - 70 - 80 100K 1G 1M 10M 100M 1G Frequency (Hz) Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 40 2 Q - Charge Injection (pC) 30 V+ = 3 V V+ = 2 V V+ = 5 V 20 10 0 VT - Switching Threshold (V) DG2613 1.5 1 0.5 - 10 - 20 - 4.0 - 3.0 - 2.0 - 1.0 0.0 1.0 2.0 3.0 4.0 0 1.0 5.0 2.0 VCOM - Analog Voltage (V) 3.0 4.0 5.0 6.0 V+ - Supply Voltage (V) Charge Injection vs. Analog Voltage Switching Threshold vs. Supply Voltage TEST CIRCUITS V+ +3V Logic Input V+ Switch Input NO or NC tr < 5 ns tf < 5 ns 0V Switch Output COM VOUT 0.9 x V OUT IN Logic Input 50 % RL 50 Ω GND CL 35 pF Switch Output 0V tON tOFF 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time www.vishay.com 4 Document Number: 74339 S-83070-Rev. C, 29-Dec-08 DG2612, DG2613 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ tr < 5 ns tf < 5 ns 0V COM NO VNO 3V VO NC VNC RL 50 Ω IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ VOUT NC or NO COM VOUT + IN IN Vgen CL 3V On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ 10 nF V+ COM IN COM 0 V, 2.4 V NC or NO VNC/ NO RL Off Isolation = 20 log GND VCOM Analyzer Figure 4. Off-Isolation Document Number: 74339 S-83070-Rev. C, 29-Dec-08 www.vishay.com 5 DG2612, DG2613 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74339. www.vishay.com 6 Document Number: 74339 S-83070-Rev. C, 29-Dec-08 Package Information Vishay Siliconix L3 SCĆ89: 6ĆLEAD (SOTĆ666) D A b L1 e L2 E E1 B Pin 1 0.10 M C A B b1 e1 q (4 ) A3 A NOTES: 1. All dimensions are in millimeters. 2. Package outline exclusive of mold flash and metal burr. 3. Package outline inclusive of plating. 4. Maximum webbing flash remain 0.075 mm. C MILLIMETERS* Dim A A3 b b1 D E E1 e e1 L1 L2 L3 q INCHES Min Nom Max Min Nom Max 0.56 – 0.60 0.022 – 0.024 0.13 0.17 0.18 0.005 0.006 0.007 0.17 – 0.25 0.006 – 0.010 – 0.27 0.34 – 0.011 0.013 1.50 1.66 1.70 0.059 0.065 0.067 1.50 1.65 1.70 0.059 0.065 0.067 1.10 1.20 1.30 0.043 0.047 0.051 0.50 BSC 0.020 BSC 0.20 – – 0.008 – – 0.11 0.19 0.26 0.004 0.007 0.010 0.10 0.23 0.30 0.004 0.009 0.012 0.05 0.10 – 0.002 0.004 – 8_ 10_ 12_ 8_ 10_ 12_ ECN: S-52444—Rev. D, 28-Nov-05 DWG: 5891 *Use millimeters as the primary measurement Document Number: 72067 28-Nov-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000