DG2718DN-T1-E4

DG2718 New Product Vishay Siliconix 0.45-W CMOS, 1.65-V to 3.6-V, Dual DPDT Analog Switch FEATURES BENEFITS APPLICATIONS D Low Voltage Operation (1.65 V to 3.6 V) D Low On-Resistance - rON: 0.45 W @ 2.7 V D Fast Switching: tON = 28 ns tOFF = 17 ns D QFN-16 (3x3) Package D D D D D D D D D D Reduced Power Consumption High Accuracy Reduce Board Space TTL/1.8-V Logic Compatible High Bandwidth Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems DESCRIPTION The DG2718 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2718 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2718 is built on Vishay Siliconix’s low voltage process. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2718 QFN-16 (3 X 3) COM1 NO1 16 15 V+ NC4 14 13 TRUTH TABLE Logic NC1 1 12 COM4 IN1, IN2 2 11 NO4 NO2 3 10 IN3, IN4 4 9 NC3 NC1, 2, 3 and 4 NO1, 2, 3 and 4 0 ON OFF 1 OFF ON ORDERING INFORMATION* COM2 Temp Range Package Part Number -40 to 85°C 16-Pin QFN (3 x 3 mm) Variation 2 DG2718DN–T1–E4 * Lead-Free Version Available 5 6 NC2 GND 7 8 NO3 COM3 Top View NOTE: Underside exposed pad has no device electrical connection. It is recommended that no electrical connection is made to it. Document Number: 72677 S–52186—Rev. B, 17-Oct-05 www.vishay.com 1 DG2718 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +4.0 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Solder Reflow Conditionsd 16-Pin QFN (3 x 3 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C Power Dissipation (Packages)b QFN-16c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1385 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 17.3 mW/_C above 70_C d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 1.8 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 1.8 V, VIN = 0.4 or 1.1 Ve –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V 2.0 2.8 W Analog Switch Analog Signal Ranged On-Resistanced VNO, VNC, VCOM rON V+ = 1.8 V, VCOM = 0.2 V/0.9 V, INO, INC = 100 mA Room Full 0.7 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current 0.4 Full Cin IINL or IINH 1.1 VIN = 0 or V+ Full 6 –1 V pF 1 mA Dynamic Characteristics Room Full 62 94 92 VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full 24 52 55 CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 65 Room –74 Room –74 CNO(off) Room 108 CNC(off) Room 108 Room 225 Room 225 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel On Channel-On Capacitanced CNO(on) Full RL = 50 W W, CL = 5 pF pF, f = 100 kHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 16 pC dB pF Power Supply Power Supply Current www.vishay.com 2 I+ VIN = 0 or V+ Full 1.0 mA Document Number: 72677 S–52186—Rev. B, 17-Oct-05 DG2718 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistanced rON Flatnessd rON Matchd Switch Off Leakage Current VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA V+ = 2.7 V VCOM = 0 to V+ V+, INO, INC = 100 mA V+ = 3.3 V, VNO, VNC = 0.3 V/3 V VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full 0.45 0.6 0.7 Room 0.1 0.15 Room 0.05 Room Full –1 –10 1 10 Room Full –1 –10 1 10 Room Full –1 –10 1 10 1.4 W nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.5 VIN = 0 or V+ Full 6 –1 V pF 1 mA Dynamic Characteristics Room Full 28 57 60 VNO or VNC = 1.5 V, RL = 50 W, CL = 35 pF Room Full 17 45 47 CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 232 Room –75 Room –75 CNO(off) Room 102 CNC(off) Room 102 Room 234 Room 234 Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel On Capacitanced Channel-On CNO(on) Full RL = 50 W W, CL = 5 pF pF, f = 100 kHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 VIN = 0 or V+ Full 3.3 V 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Document Number: 72677 S–52186—Rev. B, 17-Oct-05 www.vishay.com 3 DG2718 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 1.50 0.8 T = 25_C IS = 100 mA V+ = 1.65 V V+ = 1.8 V 1.00 V+ = 2.0 V V+ = 2.3 V 0.75 V+ = 2.7 V V+ = 3.0 V 0.50 IS = 100 mA V+ = 3 V 0.7 r ON – On-Resistance ( W ) r ON – On-Resistance ( W ) 1.25 85_C 0.6 25_C –40_C 0.5 0.4 0.3 0.2 0.25 V+ = 3.3 V 0.00 0.0 0.5 1.0 1.5 2.0 2.5 0.1 V+ = 3.6 V 3.0 3.5 0.0 0.0 4.0 0.5 1.0 VCOM – Analog Voltage (V) Supply Current vs. Temperature 2.0 2.5 3.0 Supply Current vs. Input Switching Frequency 10000 100 mA 10 mA V+ = 3 V VIN = 0 V I+ – Supply Current (A) 1000 I+ – Supply Current (nA) 1.5 VCOM – Analog Voltage (V) 100 V+ = 2.7 V 1 mA 100 mA 10 mA 1 mA 100 nA 10 10 nA 1 nA 1 100 pA –60 –40 –20 0 20 40 60 80 10 100 100 Temperature (_C) 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Leakage Current vs. Temperature Leakage vs. Analog Voltage 1000 300 250 V+ = 3.3 V 200 INO(off), INC(off) Leakage Current (pA) Leakage Current (pA) 1K 100 ICOM(off) ICOM(on) 10 V+ = 3.3 V ICOM(off) 150 INO(off), IINC(off) 100 50 0 –50 ICOM(on) –100 –150 –200 –250 1 –60 –40 –20 0 20 40 Temperature (_C) www.vishay.com 4 60 80 100 –300 0.00 0.50 1.00 1.50 2.00 2.50 3.00 VCOM, VNO, VNC – Analog Voltage (V) Document Number: 72677 S–52186—Rev. B, 17-Oct-05 DG2718 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation Crosstalk vs. Frequency Switching Time vs. Temperature 70 10 LOSS 60 –10 50 Loss, OIRR, X TALK (dB) t ON / t OFF – Switching Time (m s) tON V+ = 1.8 V tON V+ = 2.3 V 40 tON V+ = 3.0 V 30 tOFF V+ = 1.8 V tOFF V+ = 2.3 V 20 tOFF V+ = 3.0 V XTALK –30 OIRR –50 V+ = 3 V RL = 50 W –70 10 0 –60 –90 –40 –20 0 20 40 60 80 100 100 K 1M 10 M Temperature (_C) 1G Charge Injection vs. Analog Voltage 2.00 250 1.75 200 1.50 Q – Charge Injection (pC) – Switching Threshold (V) Switching Threshold vs. Supply Voltage VT 100 M Frequency (Hz) 1.25 1.00 0.75 0.50 150 V+ = 3 V 100 V+ = 1.8 V 50 0 –50 0.25 0.00 1.0 1.5 2.0 2.5 3.0 3.5 –100 0.0 4.0 0.5 V+ – Supply Voltage (V) 1.0 1.5 2.0 2.5 3.0 VCOM – Analog Voltage (V) TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC tr t 5 ns tf t 5 ns VOUT 0.9 x VOUT IN Logic Input 50% VINL Switch Output COM VINH RL 300 W GND CL 35 pF Switch Output 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON Figure 1. Document Number: 72677 S–52186—Rev. B, 17-Oct-05 Switching Time www.vishay.com 5 DG2718 New Product Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ COM NO VNO VINH tr