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DG3157ADN-T1-E4

DG3157ADN-T1-E4

  • 厂商:

    TFUNK(威世)

  • 封装:

    UFDFN6

  • 描述:

    IC SWITCH SPDT 300MHZ 6-MINIQFN

  • 数据手册
  • 价格&库存
DG3157ADN-T1-E4 数据手册
DG3157A, DG3157B Vishay Siliconix Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection (2:1 Multiplexer/Demultiplexer Bus Switch) DESCRIPTION FEATURES The DG3157A, DG3157B are high-speed single-pole double-throw, low voltage switch. Using sub-micro CMOS technology, the DG3157A, DG3157B achieves low onresistance and negligible propagation delay. The DG3157A, DG3157B can handle both analog and digital signals and permits signals with amplitudes of up to VCC to be transmitted in either direction. Select pin of control logic input can be over the V+. When the select pin is low, B0 is connected to the output A pin. When the select pin is high, B1 is connected to the output A pin. The path that is open will have a high-impedance state with respect to the output A pin. Break before make is guaranteed. The DG3157A has an internal pull down resistor on the control pin S, while the DG3157B does not. • Ultra small miniQFN6 package of 1 mm x 1.2 mm Pb-free • Wide operation voltage range: 1.8 V to 5.5 V • Useful in both analog and digital signal switching Available RoHS* COMPLIANT • 300 MHz - 3 dB bandwidth • Power down safe design • Low voltage logic threshold: Vth(high) = 1.2 V at V+ = 3.3 V • Minimal propagation delay • Break-before-make switching • Zero bounce in flow-through mode • > 300 mA latch up current per JESD78 • > 8 kV ESD/HBM • DG3157A version has internal pull down resistor on control pin S FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniQFN-6 DG3157A TRUTH TABLE 1 B1 6 S GND 2 5 V+ B0 3 4 A Top View Device Marking: E miniQFN-6 DG3157B B1 1 6 S GND 2 5 V+ B0 3 4 A Logic Input (S) Function 0 B0 Connected to A 1 B1 Connected to A ORDERING INFORMATION Temp. Range Package - 40 °C to 85 °C miniQFN-6 Part Number DG3157ADN-T1-E4 DG3157BDN-T1-E4 Top View Device Marking: D * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 68628 S-81944-Rev. C, 25-Aug-08 www.vishay.com 1 DG3157A, DG3157B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Reference V+ to GND Unit - 0.3 to + 6 S, A, Ba V - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature D-Suffix Power Dissipation (Packages)b miniQFN-6c mA - 65 to 150 °C 160 mW Notes: a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.0 mW/°C above 70 °C. SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter DC Characteristics High Level Input Voltage Symbol V+ = 3.0 V, VSL = 0.5 V, VSH = 2.0 Ve Temp.a Min.b V+ = 1.65 to 1.95 V 1.2 V+ = 2.0 to 2.6 V 1.4 V+ = 2.7 to 3.6 V 2.0 VSH V+ = 4.5 to 5.5 V V+ = 1.65 to 1.95 V Low Level Input Voltage Limits - 40 °C to 85 °C VSL Full 0.3 V+ = 2.0 to 2.6 V 0.4 V+ = 2.7 to 3.6 V 0.5 V+ = 4.5 V RON V+ = 3.0 V V+ = 2.3 V V+ = 1.65 V On-Resistance Flatness RFLAT 0 < VBN < V+ 7 VBN = 2.4 V, IA = - 30 mA 5.7 12 VBN = 4.5 V, IA = - 30 mA 10.3 15 VBN = 0 V, IA = 24 mA 5.9 9 13.7 20 VBN = 3.0 V, IA = - 24 mA Input Leakage Current ΔRON IS VBN = 0 V, IA = 8 mA 7 12 16.2 30 VBN = 0 V, IA = 4 mA 9.2 20 VBN = 1.65 V, IA = - 4 mA 24 50 V+ = 4.5 V, IA = - 30 mA 8 V+ = 3.0 V, IA = - 24 mA 13 V+ = 2.3 V, IA = - 8 mA 24 Ω 0.8 0.1 V+ = 2.3 V, VBN = 1.6 V, IA = - 8 mA 0.2 V+ = 1.65 V, VBN = 1.15 V, IA = - 4 mA 0.9 V+ = 5.5 V, VA = 5.5 V, VS = 0.8 V, 2.4 V V 89 Room V+ = 3.0 V, VBN = 2.1 V, IA = - 24 mA DG3157B - 1.0 1.0 Full DG3157A Off Stage Switch Leakage IBN(off) V+ = 5.5 V, VA/VB = 0 V/5.5 V On State Switch Leakage IBN(on) V+ = 5.5 V, VA/VB = 0 V/5.5 V www.vishay.com 2 Full VBN = 2.3 V, IA = - 8 mA V+ = 1.65 V, IA = - 4 mA Unit 0.8 4.8 V+ = 4.5 V, VBN = 3.15 V, IA = - 30 mA On-Resistance Matching Between Channels Max.b 2.4 V+ = 4.5 to 5.5 V VBN = 0 V, IA = 30 mA On-Resistance Typ.c - 1.0 Room Full Room Full - 0.1 - 1.0 - 0.1 - 1.0 2.5 7.0 0.1 1.0 0.1 1.0 µA Document Number: 68628 S-81944-Rev. C, 25-Aug-08 DG3157A, DG3157B Vishay Siliconix SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter Power Supply Power Supply Range Symbol V+ = 3.0 V, VSL = 0.5 V, VSH = 2.0 Ve V+ Quiescent Supply Current I+ V+ = 5.5 V, VA = V+ or GND Limits - 40 °C to 85 °C Temp.a Min.b Full Room Full 1.65 Typ.c Max.b Unit 5.5 1 10 V µA AC Electrical Characteristice Prop Delay Timef tPHL/tPLH V+ = 1.65 to 1.95 V Full 1.5 V+ = 2.3 to 2.7 V Full 0.8 V+ = 3.0 to 3.6 V Full 0.4 V+ = 4.5 to 5.5 V 0.3 27 50 15 45 10 30 7 25 16 45 10 40 8 35 6 21 V+ = 1.65 to 1.95 V Full Room Full Room Full Room Full Room Full Room Full Room Full Room Full Room Full Full 0.5 11 V+ = 2.3 to 2.7 V Full 0.5 6 V+ = 3.0 to 3.65 Full 0.5 4 Full 0.5 3 VA = 0 V V+ = 1.65 to 1.95 V Output Enable Time f tPZL/tPZH VLOAD = 2 x V+ for tPZL VLOAD = 0 V for tPZH V+ = 2.3 to 2.7 V V+ = 3.0 to 3.6 V V+ = 4.5 to 5.5 V V+ = 1.65 to 1.95 V Output Disable Timef tPLZ/tPHZ VLOAD = 2 x V+ for tPLZ VLOAD = 0 V for tPHZ V+ = 2.3 to 2.7 V V+ = 3.0 to 3.6 V V+ = 4.5 to 5.5 V Break-Before-Make Timed Charge Injectiond Q Off Isolationd Crosstalk tBBM OIRR d XTALK V+ = 4.5 to 5.5 V CL = 1 nF, VGEN = 0 V V+ = 5 V RGEN = 0 Ω V+ = 3.3 V Room 7 Room 5 RL = 50 Ω, f = 10 MHz Room - 57 Room - 64 ns pC dB - 3 dB Bandwidthd BW RL = 50 Ω Room 300 MHz Total Harmonic Distortiond Capacitance THD RL = 600 Ω, 0.5 Vp-p f = 600 Hz - 20 kHz Room 0.016 % CS V+ = 0 V Room 3.7 Room 7 Room 19 Control Pin Capacitanced d B Port Off Capacitance A Port Capacitance When CIO-B CIO-A(on) V+ = 5 V pF Switch Enabled Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VS = input voltage to perform proper function. f. Guaranteed by design and not production tested. The bus switch propagation delay is a function of the RC time constant contributed by the on-resistance and the specified load capacitance with an ideal voltage source (zero output impedance) driving the switch. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68628 S-81944-Rev. C, 25-Aug-08 www.vishay.com 3 DG3157A, DG3157B Vishay Siliconix LOGIC DIAGRAM Positive Logic B1 S B0 1 6 4 A 3 Figure 1. AC LOADING AND WAVEFORMS VLD RL 500 Ω SW Open From Output Under Test GND RL 500 Ω CL 50 pF TEST SW tPLH/tPHL Open tPLZ/tPZL VLD tPHZ/tPZH GND Load Circuit Figure 2. AC Test Circuit tf = 2.5 ns tr = 2.5 ns V+ 90 % Switch Input tr = 2.5 ns tf = 2.5 ns 90 % 50 % 90 % Logic Input 50 % 50 % 50 % 10 % 10 % 10 % GND tPLZ tPHL tPLH VOH Output 10 % tPZL GND tw V+ 90 % 50 % 50 % Output VOL + 0.3 V Waveform 1 SW at V LD 50 % VLD 2 VOL tPZH tPHZ VOH VOL VOH 0.3 V Output Waveform 2 SW at GND Propagation Delay T imes 50 % 0V Enable and Disable T ime-Low- and High-Level Enabling Figure 3. AC Waveforms Notes: • CL includes probe and jig capacitance. • Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. • Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. • All input pulses are supplied by generators having the following characteristics: Input PRR = 1.0 MHz, tw = 500 ns. • The outputs are measured one at a time with one transition per measurement. • VLD = 2 V+. www.vishay.com 4 Document Number: 68628 S-81944-Rev. C, 25-Aug-08 DG3157A, DG3157B Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.0 100 90 R ON - On-Resistance (Ω) 80 T = 25 °C V+ = 2.3 V IB = + 8 mA V T - Switching Threshold (V) V+ = 1.65 V IB = + 4 mA 70 60 V+ = 3.0 V IB = + 24 mA 50 40 V+ = 4.5 V IB = + 30 mA 30 20 1.5 1.0 0.5 10 0.0 0 0 1 2 3 4 1 5 2 VA - Analog Voltage (V) 3 4 5 6 V+ - Supply Voltage (V) RON vs. VA and Supply Voltage Switching Threshold vs. Supply Voltage 10 Loss 0 Loss, OIRR, XTALK (dB) - 10 - 20 - 30 - 40 - 50 OIRR - 60 XTALK - 70 V+ = 3.0 V R L = 50 Ω - 80 - 90 - 100 100k 1M 10 M 100 M 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 68628 S-81944-Rev. C, 25-Aug-08 www.vishay.com 5 DG3157A, DG3157B Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ B1 B0 A B1 VSH tr < 5 ns tf < 5 ns VSL VO B0 RL 50 Ω S CL 35 pF VB = VB 0 1 VO GND 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 4. Break-Before-Make Interval V+ V+ Rgen OUT A B0 or B1 VA VOUT + S Vgen S CL = 1 nF VS = 0 - V+ On On Off GND Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 5. Charge Injection V+ V+ 10 nF 10 nF V+ V+ A B0 or B1 S 0 V, 2.4 V Meter S 0 V, 2.4 V A B0 or B1 RL Analyzer GND GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz VA Off Isolation = 20 log V B /B 0 1 Figure 6. Off-Isolation Figure 7. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68628. www.vishay.com 6 Document Number: 68628 S-81944-Rev. C, 25-Aug-08 Package Information Vishay Siliconix MINI QFN-6L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.50 0.55 0.60 0.0197 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 REF 0.006 REF D 1.15 1.20 1.25 0.045 0.047 0.049 E 0.95 1.00 1.05 0.037 0.039 0.041 e 0.40 BSC 0.016 BSC L 0.30 0.35 0.40 0.012 0.014 0.016 L1 0.40 0.45 0.50 0.016 0.018 0.020 ECN T-07039-Rev. A, 12-Feb-07 DWG: 5958 Document Number: 74497 12-Feb-07 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 6L 6 x 0.42 0.40 Pitch 6 x 0.22 1.07 Mounting Footprint Dimensions in mm Document Number: 66556 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
DG3157ADN-T1-E4 价格&库存

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