DG3535DB-T1-E1

Product is End of Life DG3535, DG3536 Vishay Siliconix 0.25 Ω Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG3535, DG3536 is a sub 1 Ω (0.25 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG3535, DG3536 has on-resistance matching (less than 0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG3535, DG3536 an ideal interface to low voltage DSP control signals. The DG3535, DG3536 has fast switching speed with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is - 69 dB at 100 kHz. The DG3535, DG3536 is built on Vishay Siliconix’s high- density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG3535, DG3536 contains the additional benefit of 2000 V ESD protection. • • • • • • As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For MICRO FOOT analog switching products manufactured with tin/silver/copper (SnAgCu) device terminations, the lead (Pb)-free “-E1” suffix is being used as a designator. Low voltage operation Low on-resistance - RON: 0.25 Ω at 2.7 V - 69 dB OIRR at 2.7 V, 100 kHz MICRO FOOT® package ESD protection > 2000 V Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • • Reduced power consumption High accuracy Reduce board space 1.6 V logic compatible High bandwidth APPLICATIONS • • • • • • Cellular phones Speaker headset switching Audio and video signal routing PCMCIA cards Battery operated systems Relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG3535, DG3536 1 2 A NC2 IN2 B GND C NC1 MICRO FOOT 10-Bump 3 4 V+ COM2 NO2 IN1 NO1 DG3535 Top View COM1 NC1 NO2 COM2 NC2 IN1 COM1 V+ NO1 TRUTH TABLE Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON IN2 1 2 A NO2 IN2 B GND C NO1 GND Device Marking 3 COM2 4 NC2 A1 Locator XXX 3535 DG3536 Top View IN1 COM1 ORDERING INFORMATION Temp. Range V+ NC1 Package MICRO FOOT: 10 Bump - 40 °C to 85 °C (4 x 3, 0.5 mm Pitch, 238 µm Bump Height) Part Number DG3535DB-T5-E1 DG3535DB-T1-E1 DG3536DB-T5-E1 3535 = Example Base Part Number xxx = Data/Lot Traceability Code Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Reference V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) ± 300 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500 Storage Temperature (D Suffix) b Package Solder Reflow Conditions - 65 to 150 °C IR/Convection 250 >2 kV MICRO FOOT: 10 Bump (4 x 3 mm)d 457 mW ESD per Method 3015.7 Power Dissipation (Packages)c mA Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020B) c All bumps welded or soldered to PC board. d Derate 5.7 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Limits - 40 °C to 85 °C Test Conditions Otherwise Unless Specified Parameter V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Temp.a Min.b VNO, VNC, VCOM Full 0 RON Room Full Symbol Typ.c Max.b Unit V+ V Analog Switch Analog Signal Ranged On-Resistanced RON Flatnessd On-Resistance Match Between Channelsd Switch Off Leakage Current RON Flatness ΔRDS(on) INO(off) INC(off) ICOM(off) Channel-On Leakage Current V+ = 2.7 V, VCOM = 0.6/1.5 V INO, INC = 100 mA ICOM(on) V+ = 3.3 V, VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V 0.25 0.4 0.5 Room 0.15 Room 0.05 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 1.4 Ω nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current www.vishay.com 2 Cin IINL or IINH 0.5 Full VIN = 0 or V+ Full 10 1 V pF 1 µA Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Limits - 40 °C to 85 °C Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Temp.a Min.b Typ.c Max.b Room Full 52 82 90 Room Full 43 73 78 Unit Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF td Break-Before-Make Time Charge Injection d QINJ Off-Isolationd OIRR Crosstalkd XTALK Room CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω RL = 50 Ω, CL = 5 pF, f = 100 kHz CNO(off) NO, NC Off Capacitanced Channel-On Capacitance VNO or VNC = 2 V, RL = 50 Ω, CL = 35 pF CNC(off) d CNO(on) VIN = 0 or V+, f = 1 MHz CNC(on) 1 ns 6 Full 21 Room - 69 Room - 69 Room 145 Room 145 Room 406 Room 406 Room Full 0.001 pC dB pF Power Supply Power Supply Current I+ VIN = 0 or V+ 1 1 µA Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.7 0.8 T = 25 °C IS = 100 mA 0.7 RON - On-Resistance () R ON - On-Resistance ( ) 0.6 V+ = 1.8 V 0.5 V+ = 2 V 0.4 V+ = 2.7 V V+ = 3 V 0.3 0.2 V+ = 3.3 V 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V+ = 3 V IS = 100 mA 0.6 0.5 85 °C 0.4 0.3 0.2 0.1 0.0 0.0 4.0 0.5 1.0 VCOM - Analog Voltage (V) 2.0 2.5 3.0 RON vs. Analog Voltage and Temperature (NC1) 100 000 100 mA 10 mA V+ = 3 V VIN = 0 V I+ - Supply Current (A) I+ - Supply Current (nA) 1.5 VCOM - Analog Voltage (V) RON vs. VCOM and Supply Voltage 10 000 - 40 °C 25 °C 1000 100 V+ = 3 V 1 mA 100 μA 10 μA 1 μA 100 nA 10 nA 10 - 60 - 40 - 20 0 20 40 60 80 1 nA 10 100 100 1K 10K 100K 10M Input Switching Frequency (Hz) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10 000 300 250 V+ = 3 V V+ = 3 V 200 ICOM(on) ICOM(on) 150 ICOM(off) 100 INO(off), INC(off) 10 Leakage Current (pA) 1000 Leakage Current (pA) 1M Temperature (°C) 100 INO(off), INC(off) 50 0 - 50 - 100 - 150 - 200 ICOM(off) - 250 1 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 - 300 0.0 0.5 1.0 1.5 2.0 VCOM - Analog Voltage (V) 2.5 3.0 Leakage vs. Analog Voltage Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 tON V+ = 2 V 80 - 10 Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) 90 70 60 tON V+ = 3 V 50 40 tOFF V+ = 3 V 30 tOFF V+ = 2 V Loss OIRR XTALK - 30 - 50 V+ = 3 V RL = 50 - 70 20 10 0 - 60 - 40 - 20 0 20 40 60 80 - 90 100K 100 1M 10M 100M 1G Frequency (Hz) Temperature (°C) Switching Time vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency 2.00 300 250 1.75 Q - Charge Injection (pC) VT - Switching Threshold (V) 200 1.50 1.25 1.00 0.75 0.50 150 100 50 V+ = 2 V 0 V+ = 3 V - 50 - 100 - 150 - 200 0.25 - 250 0.00 0 1 2 3 4 5 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 6 - 300 0.0 0.5 1.0 1.5 2.0 VCOM - Analog Voltage (V) 2.5 3.0 Charge Injection vs. Analog Voltage www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ NO or NC Switch Input tr < 5 ns tf < 5 ns 50 % VINL Switch Output COM VINH VOUT 0.9 x V OUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ VNO VNC COM NO VO VINH tr < 5 ns tf < 5 ns VINL NC RL 300 Ω IN CL 35 pF GND VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ ΔVOUT VOUT Rgen V+ NC or NO COM VOUT + IN IN On Off On CL = 1 nF VIN = 0 - V+ Q = ΔVOUT x CL GND IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO IN COM COM RL Analyzer 0 V, 2.4 V GND VCOM Off Isolation = 20 log V NO/ NC Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Product is End of Life DG3535, DG3536 Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 10 BUMP (4 x 3, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT) 10 X Ø 0.150 ∼ 0.229 Note b Solder Mask Ø ∼ Pad Diameter + 0.1 Silicon 0.5 A2 A A1 Bump Note a 0.5 4 Recommended Land Pattern 3 2 1 b Diameter A e Index-Bump A1 Note c B E e XXX 3535 C S S e e e Top Side (Die Back) D Notes (Unless Otherwise Specified): a. Bump is Lead Free Sn/Ag/Cu. b. Non-solder mask defined copper landing pad. c. Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only. Millimetersa Inches Dim. Min. Max. Min. Max. A 0.688 0.753 0.0271 0.0296 A1 0.218 0.258 0.0086 0.0102 A2 0.470 0.495 0.0185 0.0195 b 0.306 0.346 0.0120 0.0136 D 1.980 2.020 0.0780 0.0795 E 1.480 1.520 0.0583 e S 0.5 BASIC 0.230 0.0598 0.0197 BASIC 0.270 0.0091 0.0106 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72961. www.vishay.com 8 Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MICRO FOOT: 10-BUMP (4 mm x 3 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT) 10 X Ø 0.150 ~ 0.229 Note b Solder Mask Ø ~ Pad Diameter + 0.1 Silicon 0.5 A2 A A1 Bump Note a 0.5 3 4 Recommended Land Pattern 2 1 b Diameter A e Index-Bump A1 Note c B E e XXX 3535 C S S e e e Top Side (Die Back) D Notes (unless otherwise specified) a. Bump is lead (Pb)-free Sn/Ag/Cu. b. Non-solder mask defined copper landing pad. c. Laser mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only. DIM. MILLIMETERSa INCHES MIN. MAX. MIN. MAX. A 0.688 0.753 0.0271 0.0296 A1 0.218 0.258 0.0086 0.0102 A2 0.470 0.495 0.0185 0.0195 0.0136 b 0.306 0.346 0.0120 D 1.980 2.020 0.0780 0.0795 E 1.480 1.520 0.0583 0.0598 e S 0.5 BASIC 0.230 0.0197 BASIC 0.270 0.0091 0.0106 Note a. Use millimeters as the primary measurement. ECN: S11-1065-Rev. A, 13-Jun-11 DWG: 6001 Document Number: 63272 Revision:13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000