DG401/403/405
Vishay Siliconix
Low-Power, High-Speed CMOS Analog Switches
Wide Dynamic Range
Break-Before-Make Switching Action
Simple Interfacing
44-V Supply Max Rating
15-V Analog Signal Range
On-Resistance—rDS(on): 20
Low Leakage—ID(on): 40 pA
Fast Switching—tON: 100 ns
Ultra Low Power
Requirements—PD: 0.35 W
TTL, CMOS Compatible
Single Supply Capability
Audio and Video Switching
Sample-and-Hold Circuits
Battery Operation
Test Equipment
Hi-Rel Systems
PBX, PABX
Each switch conducts equally well in both directions when on,
and blocks up to 30 V peak-to-peak when off. On-resistance
is very flat over the full 15-V analog range, rivaling JFET
performance without the inherent dynamic range limitations.
The DG401/403/405 monolithic analog switches were designed
to provide precision, high performance switching of analog
signals. Combining low power (0.35 W, typ) with high speed
(tON: 100 ns, typ), the DG401 series is ideally suited for portable
and battery powered industrial and military applications.
The three devices in this series are differentiated by the type
of switch action as shown in the functional block diagrams.
Built on the Vishay Siliconix proprietary high-voltage silicon-gate
process to achieve high voltage rating and superior switch on/off
performance, break-before-make is guaranteed for the SPDT
configurations. An epitaxial layer prevents latchup.
DG401
DG401
Dual-In-Line and SOIC
NC
D1
NC
NC
NC
NC
NC
NC
D2
1
16
S1
2
15
IN1
3
14
4
13
5
12
Key
3
1
20
IN1
19
Two SPST Switches per Package
NC
18
V–
GND
NC
5
17
GND
Logic
Switch
VL
NC
6
16
NC
0
OFF
V+
NC
7
15
VL
1
ON
NC
8
14
V+
V–
11
7
10
IN2
8
9
S2
9
NC
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
2
LCC
NC S1
4
6
Top View
D1
10
11
D2
NC
12
S2
Logic “0” 0.8 V
Logic “1” 2.4
24V
13
IN2
Top View
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4-1
DG401/403/405
Vishay Siliconix
DG403
DG403
LCC
Dual-In-Line and SOIC
D1
NC D1 NC
1
16 S1
2
15
D3
3
14
S3
4
13
S4
5
12
D4
6
11
7
10
IN2
8
9
S2
NC
NC
D2
IN1
Key
1
S1
20
S3
17
GND
Logic
SW1, SW2
SW3, SW4
NC
6
16
NC
0
OFF
ON
7
15
VL
1
ON
OFF
8
14
V+
S4
D4
9
10
11
12
2
15
3
14
S3
4
13
S4
5
12
6
11
7
8
D2
NC D1 NC
Key
3
IN1
IN2
2
1
S1
20
IN1
Two DPST Switches per Package
19
V–
D3
4
18
V–
GND
S3
5
17
GND
NC
6
16
NC
VL
V+
S4
10
IN2
D4
9
S2
7
15
VL
8
14
V+
9
10
11
NC D2 NC
Top View
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4-2
S2
LCC
16 S1
D3
NC
13
DG405
Dual-In-Line and SOIC
D4
Logic “0” 0.8 V
Logic “1”
1 2.4 V
Top View
DG405
NC
V–
5
NC D2 NC
1
Two SPDT Switches per Package
D3
Top View
D1
IN1
19
18
VL
V+
2
4
V–
GND
3
12
S2
Logic
Switch
0
OFF
1
ON
Logic “0” 0.8 V
Logic “1” 2.4 V
13
IN2
Top View
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
DG401/403/405
Vishay Siliconix
Temp Range
Package
Part Number
DG401
–40 to 85_C
16-Pin Plastic DIP
16-Pin CerDIP
–55
125_C
55 to 125
C
LCC-20
DG401DJ
DG401AK
DG401AK/883, 5962-9056901MEA
DG401AZ/883, 5962-9056901M2A
DG403
–40 to 85_C
16-Pin Plastic DIP
DG403DJ
16-Pin Narrow SOIC
DG403DY
16-Pin CerDIP
–55
55 to 125
125_C
C
LCC-20
DG403AK
DG403AK/883, 5962-8976301MEA
5962-8976301M2A
DG405
–40 to 85_C
–55 to 125_C
16-Pin Plastic DIP
DG405DJ
16-Pin Narrow SOIC
DG405DY
16-Pin CerDIP
LCC-20
DG405AK/883, 5962-8996101EA
5962-89961012A
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND – 0.3 V) to (V+) +0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+ plus 2 V)
or 30 mA, whichever occurs first
Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms 10% duty) . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, AZ Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
16-Pin SOICe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 12 mW/_C above 75_C
e. Derate 7.6 mW/_C above 75_C
f.
Derate 13 mW/_C above 75_C
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4-3
DG401/403/405
Vishay Siliconix
Test Conditions
Unless Specified
Parameter
Symbol
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Room
Full
20
35
45
45
55
Room
Full
3
3
5
3
5
Room
Hot
–0.01
–0.25
–20
0.25
20
–0.5
–5
0.5
5
Room
Hot
–0.01
–0.25
–20
0.25
20
–0.5
–5
0.5
5
Typc
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
Drain-Source
On-Resistance
rDS(on)
IS = –10 mA, VD = 10 V
V+ = 13.5 V, V– = –13.5 V
D Drain-Source
On-Resistance
DrDS(on)
IS = –10 mA, VD = 5 V, 0 V
V+ = 16.5 V, V– = –16.5 V
Switch Off
L k
Leakage
Current
C
t
Channel On
Leakage Current
IS(off)
ID(off)
V+ = 16.5,, V– = –16.5 V
VD = 15.5
15 5 V
V, VS = 15.5
15 5 V
–15
15
–15
15
ID(on)
V+ = 16.5 V, V– = –16.5 V
VS = VD = 15.5 V
Room
Hot
–0.04
–0.4
–40
0.4
40
–1
–10
1
10
Input Current VIN Low
IIL
VIN under test = 0.8 V
All Other = 2.4 V
Full
0.005
–1
1
–1
1
Input Current VIN High
IIH
VIN under test = 2.4 V
All Other = 0.8 V
Full
0.005
–1
1
–1
1
V
W
nA
A
Digital Control
mA
Dynamic Characteristics
Turn-On Time
tON
100
150
150
tOFF
RL = 300 W , CL = 35 p
pF
S
See Fi
Figure 2
Room
Turn-Off Time
Room
60
100
100
Break-Before-Make
Time Delay (DG403)
tD
RL = 300 W , CL = 35 pF
Room
12
Charge Injection
Q
CL = 10,000 pF
Vgen = 0 V, Rgen = 0 W
Room
60
Room
72
Room
90
Room
12
Room
12
CD, CS(on)
Room
39
Positive Supply Current
I+
Room
Full
0.01
Negative Supply Current
I–
Room
Full
–0.01
Logic Supply Current
IL
Room
Full
0.01
Room
Full
–0.01
Off Isolation Reject Ratio
OIRR
Channel-to-Channel Crosstalk
XTALK
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Channel On Capacitance
RL = 100 W , CL = 5 pF
p
f = 1 MHz
MH
f = 1 MHz,
MH VS = 0 V
5
ns
5
pC
dB
pF
F
Power Supplies
Ground Current
IGND
V+
V = 16.5
16 5 V,
V, V–
V = –16.5
16 5 V
VIN = 0 or 5 V
1
5
1
5
–1
–5
–1
–5
1
5
1
5
–1
–5
mA
A
–1
–5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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4-4
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
DG401/403/405
Vishay Siliconix
_
Input Switching Threshold vs. Logic Supply Voltage
Input Switching Threshold vs. Supply Voltages
10
3.5
V+ = 15 V
V– = –15 V
TA = 25_C
8
3.0
6
V TH (V)
V T (V)
2.5
DG403
SW3, 4
4
VL = 7 V
2.0
1.5
VL = 5 V
1.0
2
0.5
0
0
0
2
4
6
8
10
12
14
16
18
20
(V+)
5
10
15
20
25
30
35
40
VL – Logic Supply (V)
rDS(on) vs. VD and Temperature
rDS(on) vs. VD and Power Supply Voltage
40
V+ = 15 V, V– = –15 V
VL = 5 V
r DS(on)– Drain-Source On-Resistance ( )
r DS(on)– Drain-Source On-Resistance ( )
35
30
125_C
25
85_C
20
25_C
0_C
15
–40_C
–55_C
30
10 V
12 V
20
15 V
20 V
22 V
10
10
–15
–10
–5
0
5
10
15
–25
–15
–5
5
15
26
VD – Drain Voltage (V)
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
(V– = 0 V)
Charge Injection vs. Analog Voltage
70
200
TA = 25_C
V+ = 15 V, V– = –15 V
VL = 5 V
180
60
160
7.5 V
CL = 10 k pF
140
50
120
Q (pC)
r DS(on)– Drain-Source On-Resistance ( )
6 V
TA = 25_C
10 V
40
12 V
1 k pF
100
80
15 V
30
40
22 V
20
100 pF
60
20 V
20
10
0
0
5
10
15
VD – Drain Voltage (V)
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
20
25
–15
–10
–5
0
5
10
15
VS – Source Voltage (V)
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4-5
DG401/403/405
Vishay Siliconix
_
Leakage Current vs. Temperature
Leakage Current vs. Analog Voltage
90
100 nA
V+ = 15 V
V– = –15 V
VL = 5 V
VD = 14 V
10 nA
60
30
I S, I D (pA)
I D(off)
1 nA
ID(off)
100 pA
ID(on)
0
ID(off), IS(off)
–30
ID(on)
–60
10 pA
–90
1 pA
V+ = 15 V, V– = –15 V
VL = 5 V, TA = 25_C
For ID(off), VS = 0 V
For IS(off), VD = 0 V
–120
–150
0.1 pA
–55 –35 –15
5
25
45
65
85
105
–15
125
–10
Temperature (_C)
Supply Current vs. Temperature
210
I–
t ON , t OFF (ns)
L (A)
I+, I–, I
1n
100 p
VS = 10 V
90
I–
30
65
85
105
V+ = 15 V, V– = –15 V, VL = 5 V
tOFF
tON
120
60
45
VS = –10 V
0
125
–55 –35
–15
Switching Time vs. Power Supply Voltage*
180
270
0V
240
–5 V
210
–15 V
VS = 5 V
t ON , t OFF (ns)
t ON , t OFF (ns)
VS = –5 V
120
VS = 5 V
80
60
tOFF
85
105 125
VS = 5 V
150
–15 V
120
0V
–5 V
–15 V
0V
30
tON
tOFF
0
0
0
5
10
15
20
V+, V– Positive and Negative Supplies (V)
*Refer to Figure 2 for test conditions.
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4-6
65
60
VL = 5 V
tON
20
45
180
90
VS = –5 V
40
25
Switching Time vs. Positive Supply Voltage*
300
100
5
TA – Temperature (_C)
200
140
VS = –10 V
VS = 10 V
TA – Temperature (_C)
160
15
150
IL
10.0 p
25
10
180
IL
5
5
240
I+
V+ = 15 V, V– = –15 V
VL = 5 V
1p
–55 –35 –15
0
Switching Time vs. Temperature*
100 n
10 n
–5
VD or VS – Drain or Source Voltage (V)
25
0
5
10
15
20
25
V+ – Positive Supply (V)
Document Number: 70049
S-52433—Rev. F, 06-Sep-99
DG401/403/405
Vishay Siliconix
V+
S
VL
V–
Level
Shift/
Drive
VIN
V+
GND
D
V–
FIGURE 1.
VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform.
tr