DG412AK-E3

DG411/412/413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches      















44-V Supply Max Rating
15-V Analog Signal Range On-Resistance—rDS(on): 25
Fast Switching—tON: 110 ns Ultra Low Power—PD: 0.35 W TTL, CMOS Compatible Single Supply Capability Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals    Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 W) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. The DG411 and DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches. To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup.            DG411 DG411 Dual-In-Line and SOIC LCC D1 IN1 NC IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 S1 4 18 S2 V– 4 13 V+ V– 5 17 V+ GND 5 12 VL NC 6 16 NC 7 15 VL 8 14 S3 S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Key GND S4 3 9 2 10 1 11 20 12 19   Logic DG411 DG412 0 ON OFF 1 OFF ON Logic “0”  0.8 V Logic “1”  2.4 24V 13 D4 IN4 NC IN3 D3 Top View Document Number: 70050 S-52433—Rev. D, 06-Sep-99 www.vishay.com  FaxBack 408-970-5600 4-1 DG411/412/413 Vishay Siliconix            DG413 DG413 Dual-In-Line and SOIC LCC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 D1 Key 3 IN1 NC IN2 2 1 20 D2 19   S1 4 18 S2 Logic SW1, SW4 V– 5 17 V+ 0 OFF ON 1 ON OFF NC 6 16 NC GND 7 15 VL S4 8 14 S3 9 10 D4 11 12 IN4 NC IN3 Top View SW2, SW3 Logic “0”
0.8 V Logic “1”  2.4 24V 13 D3 Top View      Temp Range Package Part Number DG411/412 –40 to 85_C –40 40 to 85_C 85 C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin CerDIP –55 55 to 125 125_C C LCC-20 DG411DJ DG412DJ DG411DY DG412DY DG411AK, DG411AK/883, 5962-9073101MEA DG412AK, DG412AK/883, 5962-9073102MEA DG411AZ/883, 5962-9073101M2A 5962-9073102M2A DG413 –40 to 85_C 16-Pin Plastic DIP DG413DJ 16-Pin Narrow SOIC DG413DY –55 to 125_C 16-Pin CerDIP LCC-20 DG413AK, DG413AK/883, 5962-9073103MEA 5962-9073103M2A      V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) +0.3 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature (AK, AZ Suffix) . . . . . . . . . . . . . . –65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C www.vishay.com S FaxBack 408-970-5600 4-2 Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LCC-20e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 600 mW 900 mW 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Document Number: 70050 S-52433—Rev. D, 06-Sep-99 DG411/412/413 Vishay Siliconix 
  Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit –15 15 –15 15 V 35 45 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current L k C t VANALOG rDS(on) IS(off) ID(off) Full V+ = 13.5 V, V– = –13.5 V IS = –10 mA, VD =
8.5 V V+ = 16.5,, V– = –16.5 V VD =
15.5 V, VS = 15.5 15 5 V 15 5 V Room Full 25 35 45 Room Full
0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 Room Full
0.1 –0.25 –20 0.25 20 –0.25 –5 0.25 5 ID(on) V+ = 16.5 V, V– = –16.5 V VS = VD =
15.5 V Room Full
0.1 –0.4 –40 0.4 40 –0.4 –10 0.4 10 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.005 –0.5 0.5 –0.5 0.5 Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.005 –0.5 0.5 –0.5 0.5 Room Full 110 175 240 175 220 Room Full 100 145 160 145 160 25 Channel On Leakage Current nA A Digital Control mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection RL = 300 W , CL = 35 p pF VS =
10 2 10 V See S Figure Fi tD DG413 Only, VS = 10 V RL = 300 W , CL = 35 pF Room Q Vg = 0 V, Rg = 0 W , CL = 10 nF Room 5 Room 68 Room 85 Room 9 Room 9 Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK RL = 50 W, W , CL = 5 pF, f = 1 MHz pC dB Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 35 Positive Supply Current I+ Room Full 0.0001 Negative Supply Current I– Room Full –0.0001 Room Full 0.0001 Room Full –0.0001 f = 1 MHz MH ns pF F Power Supplies Logic Supply Current Ground Current Document Number: 70050 S-52433—Rev. D, 06-Sep-99 IL IGND V = 16.5, 16 5, V– V = –16.5 16 5 V V+ VIN = 0 or 5 V 1 5 –1 –5 1 5 –1 –5 1 5 –1 –5 1 5 A mA –1 –5 www.vishay.com S FaxBack 408-970-5600 4-3 DG411/412/413 Vishay Siliconix          Test Conditions Unless Specified Parameter V+ = 12 V, V– = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Symbol Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit 12 12 V W Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance Full V+ = 10.8 V, IS = –10 mA VD = 3 V, 8 V rDS(on) Room Full 40 80 100 80 100 Room Hot 175 250 400 250 315 Room Hot 95 125 140 125 140 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 W , CL = 35 p pF VS = 8 V, V See S Figure Fi 2 Break-Before-Make Time Delay tD DG413 Only, VS = 8 V, RL = 300 W , CL = 35 pF Room 25 Charge Injection Q Vg = 6 V, Rg = 0 W , CL = 10 nF Room 25 ns pC Power Supplies Positive Supply Current I+ Room Hot 0.0001 Negative Supply Current I– Room Hot –0.0001 Logic Supply Current IL Room Hot 0.0001 IGND Room Hot –0.0001 V = 13.5, V+ 13 5 VIN = 0 or 5 V Ground Current 1 5 1 5 –1 –5 –1 –5 1 5 mA A 1 5 –1 –5 –1 –5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.    _     On-Resistance vs. VD and Power Supply Voltage On-Resistance vs. VD and Unipolar Supply Voltage 300
5 V TA = 25_C 45 VL = 5 V 250 40 35 V DS(on) ( W ) r DS(on)– Drain-Source On-Resistance ( W ) 50
8 V 30
10 V 25
12 V
15 V 20 200 150 V+ = 5 V 100 15
20 V 8V 10 12 V 50 15 V 5 20 V 0 0 –20 –15 –10 –5 0 5 VD – Drain Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-4 V+ = 3 V VL = 3 V 10 15 20 0 2 4 6 8 10 12 14 16 18 20 VD – Drain Voltage (V) Document Number: 70050 S-52433—Rev. D, 06-Sep-99 DG411/412/413 Vishay Siliconix     _      Leakage Current vs. Analog Voltage ID, IS Leakages vs. Temperature 40 30 V+ = 15 V V– = –15 V VL = 5 V TA = 25_C 20 I S, I D (pA) 10 r DS(on)– Drain-Source On-Resistance (
) 35 ID(off) 0 IS(off) –10 ID(on) –20 –30 –40 –50 –60 –15 –10 –5 0 5 10 V+ = 15 V V– = –15 V VL = 5 V 30 125_C 25 85_C 20 25_C 15 –55_C 10 5 –15 15 –10 VD or VS — Drain or Source Voltage (V) –5 0 5 10 15 VD – Drain Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 100 140 V+ = 15 V V– = –15 V VL = 5 V 80 V+ = 15 V V– = –15 V VL = 5 V 120 100 CL = 10 nF 60 80 60 CL = 10 nF Q (pC) Q (pC) 40 20 CL = 1 nF 40 20 0 0 CL = 1 nF –20 –20 –40 –40 –60 –60 –15 –10 –5 0 5 10 15 –15 –10 5 10 15 Switching Time vs. Temperature Input Switching Threshold vs. Supply Voltage 3.5 240 210 3.0 VL = 7.5 V 2.0 6.5 V 1.5 1.0 5.5 V 4.5 V 0.5 t ON, t OFF (ns) 180 2.5 V TH (V) 0 VD – Drain Voltage (V) VS – Source Voltage (V) V+ = 15 V V– = –15 V VL = 5 V VS = 10 V 150 tON 120 tOFF 90 60 30 0 (V+) 5 –5 0 10 15 20 25 30 35 40 –55 –35 –15 5 25 45 65 85 105 125 Temperature (_C) Document Number: 70050 S-52433—Rev. D, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-5 DG411/412/413 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Current vs. Input Switching Frequency 100 mA V+ = 15 V V– = –15 V VL = 5 V 10 mA = 1 SW = 4 SW 1 mA I SUPPLY I+, I– 100 mA 10 mA IL 1 mA 100 nA 10 nA 10 100 1k 10 k 100 k 1M 10 M f – Frequency (Hz) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL V– Level Shift/ Drive VIN V+ GND D V– FIGURE 1. TEST CIRCUITS +5 V +15 V Logic Input tr