DG412DJ-E3

DG411, DG412, DG413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411, DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches. • Halogen-free according to IEC 61249-2-21 Definition • 44 V supply max. rating • ± 15 V analog signal range • On-resistance - RDS(on): 25  • Fast switching - tON: 110 ns • Ultra low power - PD: 0.35 µW • TTL, CMOS compatible • Single supply capability • Compliant to RoHS Directive 2002/95/EC BENEFITS • Widest dynamic range • Low signal errors and distortion • Break-bevor-make switching action • Simple interfacing APPLICATIONS • • • • • Precision automatic test equipment Precision data acquisition Communication systems Battery powered systems Computer peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411 Dual-In-Line and SOIC DG411 LCC D1 IN1 NC IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 13 V+ 4 12 VL 5 GND S4 6 11 S3 D4 7 10 D3 IN4 8 9 Key 3 2 1 20 19 S1 4 18 S2 V- 5 17 V+ NC 6 16 NC 7 15 VL 8 14 S3 GND S4 9 IN3 10 11 12 13 TRUTH TABLE Logic 0 1 Logic “0” 0.8 V Logic “1” 2.4 V DG411 ON OFF DG412 OFF ON SW2, SW3 D4 IN4 NC IN3 D3 Top View Top V iew DG413 Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top V iew Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 DG413 LCC D1 Key 3 IN1 NC IN2 2 1 20 D2 19 S1 4 18 S2 V- 5 17 V+ Logic SW1, SW4 NC 6 16 NC 0 OFF ON GND 7 15 VL 1 ON OFF S4 8 14 S3 9 D4 10 11 12 IN4 NC IN3 Top View TRUTH TABLE Logic “0” 0.8 V Logic “1” 2.4 V 13 D3 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG411DJ DG411DJ-E3 DG412DJ DG412DJ-E3 16-pin plastic DIP DG413DJ DG413DJ-E3 DG411DY DG411DY-E3 DG411DY-T1 DG411DY-T1-E3 - 40 °C to 85 °C DG412DY DG412DY-E3 DG412DY-T1 DG412DY-T1-E3 16-pin narrow SOIC DG413DY DG413DY-E3 DG413DY-T1 DG413DY-T1-E3 DG411DQ-E3 DG411DQ-T1-E3 DG412DQ-E3 DG412DQ-T1-E3 16-pin TSSOP DG413DQ-E3 DG413DQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit V + to V GND to V VL 25 (GND - 0.3) to (V+) + 0.3 (V-) -2 to (V+) + 2 or 30 mA, whichever occurs first 30 Digital Inputsa, VS, VD Continuous Current (Any terminal) Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Package)b Unit 44 100 (AK, AZ suffix) - 65 to 150 (DJ, DY suffix) - 65 to 125 16-pin plastic DIPc 470 16-pin narrow SOICd 600 16-pin CerDIPe 900 LCC-20 e V mA °C mW 900 Notes: a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix SPECIFICATIONSa Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance VANALOG Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High A Suffix - 55 °C to 125 °C Temp.b Typ.c Full V + = 13.5 V, V - = - 13.5 V IS = - 10 mA, VD = ± 8.5 V Min.d D Suffix - 40 °C to 85 °C Max.d Min.d - 15 15 - 0.25 - 20 - 0.25 - 20 - 0.4 - 40 35 45 0.25 20 0.25 20 0.4 40 Unit - 15 15 V - 0.25 -5 - 0.25 -5 - 0.4 - 10 35 45 0.25 5 0.25 5 0.4 10 ID(on) V + = 16.5 V, V - = - 16.5 V VS = VD = ± 15.5 V IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Room Full Room Full 110 RL = 300 , CL = 35 pF VS = ± 10 V, see figure 2 Room 25 Room 5 Room 68 Room 85 IS(off) ID(off) V + = 16.5, V - = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V 25 Max.d Room Full Room Full Room Full Room Full RDS(on) Switch Off Leakage Current Test Conditions Unless Specified V + = 15 V, V - = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf ± 0.1 ± 0.1 ± 0.1  nA µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay tD Charge Injection Q e Off Isolation Channel-to-Channel Crosstalke OIRR XTALK DG413 only, VS = 10 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0  CL = 10 nF RL = 50 CL = 5 pF, f = 1 MHz 100 Source Off Capacitancee CS(off) Room 9 Drain Off Capacitancee Channel On CD(off) Room 9 Room 35 Room Full Room Full Room Full Room Full 0.0001 Capacitancee Power Supplies CD(on) Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 f = 1 MHz IGND V + = 16.5 V, V - = - 16.5 V VIN = 0 V or 5 V 175 240 145 160 - 0.0001 ns pC dB pF 1 5 -1 -5 0.0001 - 0.0001 175 220 145 160 1 5 -1 -5 1 5 -1 -5 1 5 µA -1 -5 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix SPECIFICATIONSa (for Unipolar Supplies) Parameter Symbol Test Conditions Unless Specified V + = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b 12 12 V V + = 10.8 V, IS = - 10 mA, VD = 3 V, 8 V Room Full 40 80 100 80 100  Room Hot Room Hot 175 RL = 300 , CL = 35 pF VS = 8 V, see figure 2 250 400 125 140 250 315 125 140 Room 25 Room 25 Room Hot Room Hot Room Hot Room Hot 0.0001 A Suffix - 55 °C to 125 °C Typ.c Min.d D Suffix - 40 °C to 85 °C Max.d Min.d Unit Max.d Analog Switch VANALOG Analog Signal Rangee Drain-Source RDS(on) On-Resistance Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection Full DG413 only, VS = 8 V RL = 300 , CL = 35 pF Vg = 6 V, Rg = 0 , CL = 10 nF tD Q 95 ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL V + = 13.5 V, VIN = 0 V or 5 V Ground Current IGND 1 5 - 0.0001 1 5 -1 -5 0.0001 -1 -5 1 5 - 0.0001 1 5 -1 -5 µA -5 Notes: a.Refer to process option flowchart. b.Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 300 TA = 25 °C ±5V VL = 5 V 250 40 35 200 ±8V 30 V+ = 3 V VL = 3 V ± 10 V 25 150 ± 12 V ± 15 V V+ = 5 V V R DS(on) - Drain-Source On-Resistance (Ω) 50 20 100 15 ± 20 V 8V 10 12 V 50 15 V 5 0 - 20 20 V 0 - 15 - 10 -5 0 5 10 15 20 VD - Drain V oltage (V) On-Resistance vs. VD and Power Supply Voltage www.vishay.com 4 0 2 4 6 8 10 12 14 VD - Drain Voltage (V) 16 18 20 On-Resistance vs. VD and Unipolar Supply Voltage Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 V+ = 15 V V- = - 15 V VL = 5 V TA = 25 °C 20 I S, I D (pA) 10 R DS(on) - Drain-Source On-Resistance () 35 30 ID(off) 0 IS(off) - 10 ID(on) - 20 - 30 - 40 - 50 - 15 - 10 -5 0 5 10 30 125 °C 25 85 °C 20 25 °C 15 - 55 °C 10 5 - 15 - 60 15 V+ = 15 V V- = - 15 V VL = 5 V - 10 Leakage Current vs. Analog Voltage 0 5 10 15 ID, IS Leakages vs. Temperature 140 100 V+ = 15 V V- = - 15 V VL = 5 V 80 120 100 60 V+ = 15 V V- = - 15 V VL = 5 V CL = 10 nF 80 40 60 Q (pC) Q (pC) -5 VD - Drain Voltage (V) VD or V S - Drain or Source Voltage (V) CL = 10 nF 20 CL = 1 nF 40 20 0 0 CL = 1 nF - 20 - 20 - 40 - 40 - 60 - 15 - 10 -5 0 5 VS - Source Voltage (V) 10 - 60 - 15 15 -5 0 5 10 15 VD - Drain Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 3.5 240 210 3.0 180 VL = 7.5 V 2.0 6.5 V 1.5 1.0 5.5 V 4.5 V 0.5 t ON , t OFF (ns) 2.5 V TH (V) - 10 V+ = 15 V V- = - 15 V VL = 5 V VS = 10 V 150 tON 120 tOFF 90 60 30 0 5 10 15 20 25 30 35 40 (V+) Input Switching Threshold vs. Supply Voltage Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Switching Time vs. Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 mA V+ = 15 V V- = - 15 V VL = 5 V 10 mA = 1 SW = 4 SW 1 mA I SUPPLY I+, I100 µA 10 µA IL 1 µA 100 nA 10 nA 10 100 1K 10K 100K 1M 10M f - Frequency (Hz) Supply Current vs. Input Switching Frequency SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V Logic Input tr < 20 ns tf < 20 ns 3V 50 % 0V V+ VL ± 10 V S tON D Switch Input* VO VS VO IN GND RL 300  V- CL 35 pF Switch Output Switch Input* - 15 V VO = V S 0V tON 90 % VO - VS * V S = 10 V for t ON, V S = - 10 V for tOFF CL (includes fixture and stray capacitance) RL 90 % Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time www.vishay.com 6 Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix TEST CIRCUITS +5V + 15 V 3V Logic Input VL VS1 S1 D1 Switch Output IN2 RL1 300  V- GND 90 % VO2 D2 S2 0V VS1 VO1 VO1 IN1 VS2 50 % V+ RL2 300  0V VS2 VO2 CL1 35 pF CL2 35 pF 0V Switch Output 90 % tD tD - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413) VO Rg +5V + 15 V VL V+ S VO INX OFF D IN Vg ON OFF VO CL 10 nF 3V V- GND INX OFF ON Q = V O x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. - 15 V Figure 4. Charge Injection C +5V + 15 V VL V+ D1 S1 VS Rg = 50  C 50  IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTA LK Isolation = 20 log V- C VS VO - 15 V C = RF bypass Figure 5. Crosstalk Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG411, DG412, DG413 Vishay Siliconix +5V + 15 V +5V C + 15 V C C VL V+ S VS C VO D VL V+ S Rg = 50  RL 50  IN 0 V, 2.4 V Meter IN GND V- C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND - 15 V Off Isolation = 20 log V- C VS VO - 15 V C = RF Bypass Figure 7. Source/Drain Capacitances Figure 6. Off Isolation APPLICATIONS Single Supply Operation: Summing Amplifier The DG411, DG412, DG413 can be operated with unipolar supplies from 5 V to 44 V. These devices are characterized and tested for unipolar supply operation at 12 V to facilitate the majority of applications. In single supply operation, V+ is tied to VL and V- is tied to 0 V. See Input Switching Threshold vs. Supply Voltage curve for VL versus input threshold requirments. When driving a high impedance, high capacitance load such as shown in figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output. R1 R2 VIN 1 C1 R5 R3 R4 VIN 2 VOUT + C2 R6 DG413 Figure 8. Summing Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70050. www.vishay.com 8 Document Number: 70050 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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