DG441DJ

DG441, DG442 Vishay Siliconix Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG441, DG442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 , typ.) with high speed (tON 150 ns, typ.), the DG441, DG442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. • Halogen-free according to IEC 61249-2-21 Definition • Low on-resistance: 50  • Low leakage: 80 pA • Low power consumption: 0.2 mW • Fast switching action - tON: 150 ns • Low charge injection - Q: - 1 pC • DG201A/DG202 upgrades • TTL/CMOS-compatible logic • Single supply capability • Compliant to RoHS Directive 2002/95/EC To achieve high voltage ratings and superior switching performance, the DG441, DG442 are built on Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. BENEFITS • • • • • • • Less signal errors and distortion Reduced power supply requirements Faster throughput Improved reliability Reduced pedestal errors Simplifies retrofit Simple interfacing APPLICATIONS • • • • • • • • Audio switching Battery powered systems Data acquisition Hi-Rel systems Sample-and-hold circuits Communication systems Automatic test equipment Medical instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION IN1 16 1 IN2 D1 IN1 NC IN2 D2 Key D1 S1 V- 15 2 14 3 4 Dual-In-Line and SOIC 13 3 D2 S2 5 NC 20 19 18 S2 V- 5 17 V+ NC 6 DG441 16 NC GND 7 Top View 15 NC S4 8 14 S3 V+ 12 1 S1 DG441 GND 2 4 LCC Top View S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 9 D4 10 IN4 11 NC 12 IN3 13 D3 TRUTH TABLE Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V Document Number: 70053 S11-1066-Rev. J, 30-May-11 DG441 On Off DG442 Off On www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG441DJ DG441DJ-E3 16-pin plastic DIP DG442DJ DG442DJ-E3 DG441DY DG441DY-E3 DG441DY-T1 DG441DY-T1-E3 - 40 °C to 85 °C 16-pin narrow SOIC DG442DY DG442DY-E3 DG442DY-T1 DG442DY-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter V+ to V- Limit 44 GND to V- 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 Digital Inputsa, VS, VD Continuous Current (any terminal) Current, S or D (pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Package)b Unit V mA 100 (AK suffix) - 65 to 150 (DJ, DY suffix) - 65 to 125 16-pin plastic DIPc 450 16-pin CerDIPd 900 16-pin narrow SOICd 900 LCC-20d 1200 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75 °C. d. Derate 12 mW/°C above 75 °C. SCHEMATIC DIAGRAM Typical Channel V+ 5 V Reg INX V- Level Shift/ Drive V+ GND V- Figure 1. www.vishay.com 2 Document Number: 70053 S11-1066-Rev. J, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix SPECIFICATIONSa (Dual Supplies) A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Symbol VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit - 15 15 - 15 15 V Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) On-Resistance Match Between Channelse RDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) Full IS = - 10 mA, VD = ± 8.5 V V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 10 V V+ = 15 V, V- = - 15 V V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Room Full 50 Room Full 85 100 85 100 4 5 4 5 Room Full ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Room Full ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Room Full ± 0.08 - 0.5 - 40 0.5 40 - 0.5 - 10 0.5 10 Full - 0.01 - 500 500 - 500 500 Full 0.01 - 500 500 - 500 500  nA Digital Control Input Current VIN Low IIL Input Current VIN High IIH Dynamic Characteristics Turn-On Time DG441 Turn-Off Time DG442 Charge Injectione Off Isolatione Crosstalk (Channel-toChannel) Source Off Capacitancee Drain Off Capacitance Channel On e Capacitancee Power Supplies Positive Supply Current Negative Supply Current Ground Current Document Number: 70053 S11-1066-Rev. J, 30-May-11 VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V nA tON RL = 1 k, CL = 35 pF Room 150 250 250 tOFF VS = ± 10 V See Figure 2 Room 90 120 120 Room 110 210 210 Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0  Room -1 Room 60 Room 100 Room 4 Room 4 VANALOG = 0 V Room 16 V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Full Room Full Full 15 - 0.0001 OIRR XTALK CS(off) CD(off) CD(on) RL = 50 , CL = 5 pF f = 1 MHz f = 1 MHz I+ IIGND - 15 ns pC dB pF 100 -1 -5 - 100 100 -1 -5 - 100 µA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix SPECIFICATIONSa (Single Supply) A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter VIN = 2.4 V, 0.8 Vf Temp.b RDS(on) IS = - 10 mA, VD = 3 V, 8 V V+ = 10.8 V Room Full 100 160 200 tON RL = 1 k, CL = 35 pF Room 300 450 450 Room 60 200 200 Room 2 Full Room Full Full 15 - 0.0001 Symbol Typ.c Min.d Max.d Min.d 12 0 Max.d Unit 12 V 160 200  Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time VANALOG tOFF Charge Injection Q Power Supplies Positive Supply Current I+ Negative Supply Current Ground Current IIGND Full VS = 8 V See Figure 2 CL = 1nF, Vgen = 6 V, Rgen = 0  V+ = 13.2 V, V- = 0 V VIN = 0 or 5 V 0 - 15 ns pC 100 -1 - 100 - 100 100 -1 - 100 - 100 µA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70053 S11-1066-Rev. J, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 ±5V 80 60 ±8V ± 10 V ± 12 V 40 ± 15 V ± 20 V 20 RDS(on) - Drain-Source On-Resistance () RDS(on) - Drain-Source On-Resistance (Ω) 100 0 V+ = 15 V V- = - 15 V 70 60 125 °C 50 85°C 40 25 °C 30 20 - 55 °C 0 °C - 40 °C 10 0 - 20 - 15 - 10 -5 0 5 10 15 20 - 15 - 10 - 5 VD - Drain Voltage (V) 0 5 10 15 VD - Drain Voltage (V) RDS(on) vs. VD and Power Supply Voltage RDS(on) vs. VD and Temperature 300 140 R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance () V- = 0 V 250 V+ = 5 V 200 150 8V 100 10 V 12 V 15 V 50 20 V 0 4 0 8 12 16 120 125 °C 85 °C 100 80 25 °C 60 - 55 °C 40 0 °C - 40 °C 20 V+ = 12 V V- = 0 V 0 20 0 2 4 VD - Drain Voltage (V) 6 8 10 12 VD - Drain Voltage (V) RDS(on) vs. VD and Temperature (Single 12-V Supply) RDS(on) vs. VD and Unipolar Power Supply Voltage 50 140 CL = 1 nF 40 120 Crosstalk 30 100 V+ = 15 V V- = - 15 V Q - (pC) (- dB) 20 80 60 10 0 Off Isolation 40 V+ = 12 V V- = 0 V - 10 V+ = 15 V V- = - 15 V Ref. 10 dBm 20 - 20 0 - 30 100 1K 10K 100K 1M f - Frequency (Hz) Crosstalk and Off Isolation vs. Frequency Document Number: 70053 S11-1066-Rev. J, 30-May-11 10M - 10 -5 0 5 10 VS - Source Voltage (V) Charge Injection vs. Source Voltage www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 2.4 IS(off), ID(off) 0 1.6 VIN - (V) I S, I D - (pA) - 20 0.8 - 40 ID(on) - 60 V+ = 15 V V- = - 15 V For I(off), V D = - VS - 80 0 0 5 10 15 - 100 - 15 20 V+, V- Positive and Negative Supplies (V) - 10 -5 5 0 10 15 VD or V S - Drain or Source Voltage (V) Switching Threshold vs. Supply Voltage Source/Drain Leakage Currents 10 50 V+ IS(off), ID(off) 44 40 0 S 5 V - CMOS Compatible D - 10 V+ - (V) I S, I D - (pA) IN IS(on) + ID(on) - 20 30 V20 TTL Compatible VIN = 0.8 V, 2.4 V V+ = 12 V V- = 0 V For ID, V S = 0 For IS, V D = 0 - 30 10 CMOS Compatible 3 0 - 40 0 2 4 6 8 10 12 0 - 20 - 10 VD or V S - Drain or Source Voltage (V) - 30 - 40 - 50 V- - Negative Supply (V) Operating Voltage Source/Drain Leakage Currents (Single 12 V Supply) 160 500 V- = 0 V 140 tON 400 120 100 t - (ns) t - (ns) tON 300 80 200 tOFF 60 100 40 tOFF 20 0 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 Supply Voltage (V) Switching Time vs. Power Supply Voltage www.vishay.com 6 8 10 12 14 16 18 20 22 VS - Source Voltage (V) Switching Time vs. Power Supply Voltage Document Number: 70053 S11-1066-Rev. J, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix TEST CIRCUITS + 15 V 3V Logic Input 50 % V+ IN 3V 0V D S 10 V GND V- tr < 20 ns tf < 20 ns 50 % VO RL 1 k CL 35 pF - 15 V Switch Input VS Switch Output 0V CL (includes fixture and stray capacitance) tOFF VO 80 % 80 % tON Note: Logic input waveform is inverted for DG442. Figure 2. Switching Time + 15 V V O VO V+ Rg D S INX VO IN CL 1 nF 3V V- GND OFF ON OFF (DG441) INX OFF ON Q = VO x CL OFF (DG442) - 15 V Figure 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic + 15 V C + 15 V C V+ S1 VS Rg = 50  D1 V+ 50  IN1 0 V, 2.4 V NC 0 V, 2.4 V GND RL V- RL IN 0 V, 2.4 V IN2 VO D Rg = 50  VO D2 S2 S VS GND V- C C - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass Off Isolation = 20 log VS VO VS VO Figure 5. Off Isolation Figure 4. Crosstalk + 15 V C S V+ Meter 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent D GND V- C - 15 V Figure 6. Source/Drain Capacitances Document Number: 70053 S11-1066-Rev. J, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG441, DG442 Vishay Siliconix APPLICATIONS + 24 V + 15 V RL V+ DG442 I=3A 150  + 15 V VN0300 L, M IN + 15 V VIN 1/4 DG442 10 k + 15 V GND S + D VOUT - CH V- IN 0 = Load Off 1 = Load On - H = Sample L = Hold Figure 8. Open Loop Sample-and-Hold Figure 7. Power MOSFET Driver VIN - 15 V + + - VOUT + 15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 k GAIN2 AV = 10 R2 5 k With SW4 Closed VOUT VIN GAIN3 AV = 20 R3 4 k GAIN4 AV = 100 R4 1 k = R1 + R2 + R3 + R4 = 100 R4 DG441 or DG442 V- GND - 15 V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70053. www.vishay.com 8 Document Number: 70053 S11-1066-Rev. J, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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