DG444B, DG445B
Vishay Siliconix
Improved Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG444B, DG445B are monolithic quad analog switches
designed to provide high speed, low error switching of
analog and audio signals. The DG444B, DG445B are
upgrades to the original DG444, DG445.
Combing low on-resistance (45 , typ.) with high speed
(tON 120 ns, typ.), the DG444B, DG445B are ideally suited
for Data Acquisition, Communication Systems, Automatic
Test Equipment, or Medical Instrumentation. Charge
injection has been minimized on the drain for use in
sample-and-hold circuits.
The DG444B, DG445B are built using Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both
directions and blocks input voltages to the supply levels
when off.
•
•
•
•
•
•
Low On-Resistance: 45 W
Low Power Consumption: 1 mW
Fast Switching Action - tON: 120 ns
Low Charge Injection
TTL/CMOS-Compatible Logic
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
•
•
•
•
•
Low Signal Errors and Distortion
Reduced Power Supply Consumption
Faster Throughput
Reduced Pedestal Errors
Simple Interfacing
APPLICATIONS
•
•
•
•
•
•
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG444B
Dual-In-Line and SOIC
IN1
1
16
IN2
D1
2
15
D2
Logic
DG444B
DG445B
S1
3
14
S2
0
ON
OFF
V-
4
13
V+
1
OFF
ON
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic "0" 0.8 V
Logic "1" 2.4 V
Top View
DG444B
QFN16 (4 x 4 mm)
ORDERING INFORMATION
D1 IN1 IN2 D2
16
15
14
Temp Range
13
S1
1
12
S2
V-
2
11
V+
GND
3
10
VL
S4
4
9
S3
5
6
7
Document Number: 72626
S13-1287-Rev. C, 27-May-13
16-pin Plastic DIP
- 40 °C to 85 °C
16-pin Narrow SOIC
8
D4 IN4 IN3 D3
Top View
Package
16 pin QFN 4 x 4 mm
(Variation 1)
For technical questions, contact: pmostechsupport@vishay.com
Part Number
DG444BDJ
DG444BDJ-E3
DG445BDJ
DG445BDJ-E3
DG444BDY-E3
DG444BDY-T1-E3
DG445BDY-E3
DG445BDY-T1-E3
DG444BDN-T1-E4
DG445BDN-T1-E4
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
V+ to V-
Unit
44
GND to V-
25
VL
(GND - 0.3 V) to (V+) + 0.3 V
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2 or
30 mA, whichever occurs first
Continuous Current (Any Terminal)
30
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
100
Storage Temperature
Power Dissipation (Package)b
- 65 to 125
16-pin Plastic DIPc
470
16-pin Narrow Body SOICd
640
QFN-16
850
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 8 mW/°C above 75 °C.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72626
S13-1287-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
SPECIFICATIONS (for dual supplies)
Limits
- 40 °C to 85 °C
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Symbol
Analog Signal Ranged
Drain-Source
On-Resistance
VANALOG
RDS(on)
VL = 5 V, VIN = 2.4 V, 0.8 Ve
IS = 1 mA, VD = ± 10 V
IS(off)
VD = ± 14 V, VS = ± 14 V
Switch Off Leakage Current
ID(off)
ID(on)
Channel On Leakage Current
VS = VD = ± 14 V
Temp.a
Min.b
Full
- 15
Room
Full
Room
Full
Room
Full
Room
Full
- 0.5
-5
- 0.5
-5
- 0.5
- 10
Typ.c
Max.b
Unit
15
V
45
80
95
0.5
5
0.5
5
0.5
10
± 0.01
± 0.01
± 0.02
nA
Digital Control
Input Voltage Low
VINL
Full
Input Voltage High
VINH
Full
2.4
Input Current VIN Low
IINL
Full
-1
- 0.01
1
Input Current VIN High
IINH
Full
-1
0.01
1
VIN under test = 0.8 V
All Other = 2.4 V
VIN under test = 2.4 V
All Other = 0.8 V
0.8
V
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Q
OIRR
Off Isolatione
Crosstalk (Channel-to-Channel)
Source Off Capacitance
d
XTALK
CS(off)
Drain Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
RL = 1 k, CL = 35 pF
VS = ± 10 V, See Figure 2
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0
RL = 50 , CL = 15 pF
VS = 1 VRMS, f = 100 kHz
Room
300
Room
200
Room
1
Room
- 90
Room
- 95
Room
5
Room
5
VS = VD = 0 V, f = 1 MHz
Room
16
VIN = 0 V or 5 V
Room
Full
Room
Full
Room
Full
VS = 0 V, f = 100 kHz
ns
pC
dB
pF
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IIN
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
1
5
-1
-5
µA
1
5
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
SPECIFICATIONS (for unipolar supplies)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
D Suffix
- 40 °C to 85 °C
VL = 5 V, VIN = 2.4 V, 0.8 Ve
Temp.a
Min.b
VANALOG
Full
0
RDS(on)
IS = 1 mA, VD = 3 V, 8 V
Turn-On Time
tON
Turn-Off Time
tOFF
Q
Parameter
Analog Switch
Symbol
Analog Signal Ranged
Drain-Source
On-Resistanced
Dynamic Characteristics
Charge Injection
Typ.c
Max.b
Unit
12
V
Room
Full
90
160
200
RL = 1 k, CL = 35 pF, VS = 8 V
See Figure 2
Room
120
300
Room
60
200
CL = 1 nF, Vgen = 6 V, Rgen = 0
Room
4
ns
pC
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IIN
Room
Full
Room
Full
Room
Full
VIN = 0 or 5 V
VL = 5.25 V, VIN = 0 or 5 V
1
5
-1
-5
µA
1
5
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) – Drain-Source On-Resistance (Ω)
110
100
90
±5V
80
70
± 10 V
60
50
± 15 V
40
± 20 V
30
20
10
- 20 - 16 - 12
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
-8 -4
0
4
8
VD – Drain Voltage (V)
12
16
20
RDS(on) vs. VD and Power Supply Voltages
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V+ = 15 V
V- = - 15 V
90
- 15
- 10
-5
0
5
10
15
VD – Drain Voltage (V)
RDS(on) vs. VD and Temperature
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72626
S13-1287-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
V+ = 5 V
225
V+ = 22 V
V- = - 22 V
TA = 25 °C
30
200
20
175
150
IS, ID - Current (pA)
RDS(on) – Drain-Source On-Resistance (Ω)
250
7V
125
10 V
100
12 V
15 V
75
ID(on)
10
IS(off), ID(off)
0
- 10
- 20
50
- 30
25
- 40
- 20
0
0
2
4
6
8
10
12
VD – Drain Voltage (V)
14
16
RDS(on) vs. VD and Single Power Supply Voltages
- 10 - 5
0
5
10
VANALOG – Analog Voltage (V)
15
20
Leakage Currents vs. Analog Voltage
1 nA
30
V+ = 15 V
V- = - 15 V
VS, V D = - 14 V
20
100 pA
Q – Charge (pC)
IS, ID - Current
- 15
IS(off), ID(off)
10 pA
10
V+ = 15 V
V- = - 15 V
0
V+ = 12 V
V- = 0 V
- 10
- 20
1 pA
- 55
- 35
- 15
5
25
45
65
Temperature (°C)
85
- 30
- 15
105 125
Leakage Current vs. Temperature
- 10
-5
0
5
VANALOG – Analog Voltage (V)
10
15
QS, QD - Charge Injection vs. Analog Voltage
120
V+ = + 15 V
V- = - 15 V
110
100
OIRR (dB)
90
RL = 50 Ω
80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Off Isolation vs. Frequency
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
SCHEMATIC DIAGRAM (typical channel)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
+5V
+ 15 V
Logic
Input
VL
50 %
V+
S
± 10 V
3V
0V
D
IN
VO
RL
1 kΩ
3V
tOFF
Switch
Input
CL
35 pF
VS
VO
V-
GND
tr < 20 ns
tf < 20 ns
50 %
Switch
Output
- 15 V
80 %
0V
tON
Note:
CL (includes fixture and stray capacitance)
80 %
Logic input waveform is inverted for DG445.
Figure 2. Switching Time
+5V
Rg
VL
+ 15 V
VO
V+
S
D
IN
Vg
ΔVO
CL
1 nF
3V
GND
VO
INX
OFF
ON
OFF
(DG444B)
V-
INX
- 15 V
OFF
ON
Q = ΔVO x CL
OFF
(DG445B)
Figure 3. Charge Injection
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Document Number: 72626
S13-1287-Rev. C, 27-May-13
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
TEST CIRCUITS
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+5V
+ 15 V
C
+5V
+ 15 V
C
VL
V+
S1
VS
D1
S
VS
50 Ω
IN1
VO
D
Rg = 50 Ω
0 V, 2.4 V
VO
D2
S2
GND
RL
IN2
GND
V-
C = RF bypass
V-
C
C
- 15 V
- 15 V
XTA LK Isolation = 20 log
RL
IN
0 V, 2.4 V
NC
0 V, 2.4 V
V+
VL
Rg = 50 Ω
Off Isolation = 20 log
VS
VO
VS
VO
Figure 5. Off Isolation
Figure 4. Crosstalk
+5V
+ 15 V
VL
V+
C
S
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
V-
f = 1 MHz
C
- 15 V
Figure 6. Source/Drain Capacitances
APPLICATIONS
+ 15 V
+5V
+ 15 V
VL
V+
1/
+ 15 V
4 DG444B
VOUT
+5V
0V
10 kΩ
0V
VIN
GND
V-
Figure 7. Level Shifter
Document Number: 72626
S13-1287-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG444B, DG445B
Vishay Siliconix
APPLICATIONS
VIN
+
-
VOUT
+5V
+ 15 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
VL
GAIN 1
AV = 1
R1
90 kΩ
GAIN 2
AV = 10
R2
5 kΩ
With SW4 Closed:
VOUT
=
R1 + R2 + R3 + R4
VIN
GAIN 3
AV = 20
R3
4 kΩ
GAIN 4
AV = 100
R4
1 kΩ
= 100
R4
DG444B or DG445B
V-
GND
- 15 V
Figure 8. Precision-Weighted Resistor Programmable-Gain Amplifier
+5V
+ 15 V
V1
Logic Input
Low = Sample
High = Hold
DG444B
+ 15 V
15 V
+ 15 V
VIN
+
J202
C1
50 pF
5 MΩ
5.1 MΩ
R1
200 kΩ
2N4400
VOUT
V2
30 pF
GND
C2
1000 pF
J500
J507
- 15 V
Figure 9. Precision Sample-and-Hold
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72626.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72626
S13-1287-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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Package Information
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Vishay Siliconix
QFN 4x4-16L Case Outline
(5)
(4)
VARIATION 1
MILLIMETERS(1)
DIM
VARIATION 2
MILLIMETERS(1)
INCHES
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.85
0.95
0.029
0.033
0.037
0.75
0.85
0.95
0.029
0.033
0.037
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
0.35
0.010
0.014
0.25
0.35
0.010
2.2
0.079
0.087
2.5
2.7
0.098
A3
b
0.20 ref.
0.25
D
D2
0.30
0.008 ref.
4.00 BSC
2.0
2.1
0.012
0.20 ref.
0.157 BSC
0.083
0.30
4.00 BSC
2.6
e
0.65 BSC
0.026 BSC
0.65 BSC
E
4.00 BSC
0.157 BSC
4.00 BSC
E2
2.0
K
L
2.1
2.2
0.079
0.20 min.
0.5
0.6
0.083
0.087
2.5
0.008 min.
0.7
0.020
0.024
0.008 ref.
2.6
0.3
0.4
0.014
0.157 BSC
0.102
0.106
0.026 BSC
0.157 BSC
2.7
0.098
0.20 min.
0.028
0.012
0.102
0.106
0.008 min.
0.5
0.012
0.016
N(3)
16
16
16
16
Nd(3)
4
4
4
4
Ne(3)
4
4
4
4
0.020
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
Revision: 22-Apr-13
Document Number: 71921
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72608
Revision: 21-Jan-08
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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