DG534A/538A
Vishay Siliconix
4-/8-Channel Wideband Video Multiplexers
FEATURES
BENEFITS
APPLICATIONS
D Wide Bandwidth: 500 MHz
D Very Low Crosstalk: –97 dB @ 5 MHz
D On-Board TTL-Compatible Latches with
Readback
D Optional Negative Supply
D Low rDS(on): 45
D Single-Ended or Differential Operation
D Latch-up Proof
D
D
D
D
D
D
D
D Wideband Signal Routing and
Multiplexing
D Video Switchers
D ATE Systems
D Infrared Imaging
D Ultrasound Imaging
Improved System Bandwidth
Improved Channel Off-Isolation
Simplified Logic Interfacing
High-Speed Readback
Allows Bipolar Signal Swings
Reduced Insertion Loss
Allows Differential Signal Switching
DESCRIPTION
The DG534A is a digitally selectable 4-channel or dual
2-channel multiplexer. The DG538A is an 8-channel or dual
4-channel multiplexer. On-chip TTL-compatible address
decoding logic and latches with data readback are included to
simplify the interface to a microprocessor data bus. The low
on-resistance and low capacitance of the these devices make
them ideal for wideband data multiplexing and video and audio
signal routing in channel selectors and crosspoint arrays. An
optional negative supply pin allows the handling of bipolar
signals without dc biasing.
The DG534A/DG538A are built on a D/CMOS process that
combines n-channel DMOS switching FETs with low-power
CMOS control logic, drivers and latches. The low-capacitance
DMOS FETs are connected in a “T” configuration to achieve
extremely high levels of off isolation. Crosstalk is reduced to
–97 dB at 5 MHz by including a ground line between adjacent
signal paths. An epitaxial layer prevents latch-up.
For more information refer to Vishay Siliconix applications
note AN502.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG534ADJ
DG534ADN
Dual-In-Line
20 NC
DA
GND
DB
DA
2
19 DB
3
2
1
20 19
V+
3
18 V–
SA1
4
17 SB1
GND
5
16 GND
SA2
6
15 SB2
4/2
7
14 VL
RS
8
13 I/O
WR
9
12
EN
A1 10
11
A0
V–
1
V+
PLCC
GND
SA1
4
18 SB1
GND
5
17 GND
SA2
6
16 SB2
4/2
7
15 VL
RS
8
14 NC
Latch/Drivers
Latches/Drivers
Top View
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
I/O
A0
EN
10 11 12 13
A1
WR
9
Top View
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DG534A/538A
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG538ADJ
Dual-In-Line
DG538ADN
V+
DA
GND
V+
3
26 SB1
4
3
2
SA1
4
25 GND
GND
5
24 SB2
GND
5
25
GND
SA2
6
23 GND
SA2
6
24
SB2
GND
7
22 SB3
GND
7
23
GND
SA3
8
22
SB3
GND
9
21
GND
SA4
10
20
SB4
8/4
11
19
VL
SA3
8
21 GND
GND
9
20 SB4
S B1
27 V–
V–
28 DB
2
DB
1
DA
S A1
PLCC
GND
1 28 27 26
17 EN
12 13 14 15 16 17 18
Latch/Drivers
16 A0
A2 14
RS
RS 12
WR 13
15 A1
I/O
Latch/Drivers
EN
18 I/O
A1
A0
19 VL
8/4 11
WR
A2
SA4 10
Top View
Top View
TRUTH TABLE Ċ DG534A
A1
A0
EN
X
X
X
X
1
1
Maintains previous state
X
X
X
X
X
0
X
None (latches cleared)
X
X
X
0
0
1
X
None
0
0
0
1
0
1
0
SA1
0
0
1
1
0
1
0
SA2
0
1
0
1
0
1
0
SB1
0
1
1
1
0
1
0
SB2
0
X
0
1
0
1
1
SA1 and SB1
0
X
1
1
0
1
1
SA2 and SB2
1
1
Note c
1
Note b
WR
RS
4/2a
I/O
On Switch
DA and DB may be
connected externally
Latches Transparent
Logic “0” = VAL v 0.8 V
Logic “1” = VAH w 2.4 V
X = Don’t Care
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Document Number: 70069
S-05734—Rev. G, 29-Jan-02
DG534A/538A
Vishay Siliconix
TRUTH TABLE Ċ DG538A
A2
A1
A0
EN
X
X
X
X
X
1
1
Maintains previous state
X
X
X
X
X
X
0
X
None (latches cleared)
X
X
X
X
0
0
1
X
None
0
0
0
0
1
0
1
0
SA1
0
0
0
1
1
0
1
0
SA2
0
0
1
0
1
0
1
0
SA3
0
0
1
1
1
0
1
0
SA4
0
1
0
0
1
0
1
0
SB1
0
1
0
1
1
0
1
0
SB2
0
1
1
0
1
0
1
0
SB3
0
1
1
1
1
0
1
0
SB4
0
X
0
0
1
0
1
1
SA1 and SB1
0
X
0
1
1
0
1
1
SA2 and SB2
0
X
1
0
1
0
1
1
SA3 and SB3
0
X
1
1
1
0
1
1
SA4 and SB4
1
1
Note c
1
WR
Note b
RS
8/4a
I/O
On Switch
DA and DB should be
connected externally
Latches Transparent
Logic “0” = VAL v 0.8 V
Logic “1” = VAH w 2 V
X = Don’t Care
Notes:
a. Connect DA and DB together externally for single-ended operation.
b. With I/O high, An and EN pins become outputs and reflect latch contents. See timing diagrams for more detail.
c. 8/4 can be either “1” or “0” but should not change during these operations.
ORDERING INFORMATION
Temperature Range
Package
Part Number
DG534A
–40 to 85_C
_
–55 to 125_C
20-Pin Plastic DIP
DG534ADJ
20-Pin PLCC
DG534ADN
20-Pin Sidebraze
DG534AAP/883, 5962-906021MRC
28-Pin Plastic DIP
DG538ADJ
28-Pin PLCC
DG538ADN
DG538A
–40 to 85_C
_
–55 to 125_C
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
28-Pin Sidebraze
DG538AAP/883, 5962-8976001MXA
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DG534A/538A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +21 V
Storage Temperature
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +21 V
V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 V to +0.3 V
(A Suffix) . . . . . . . . . . . . . . . . . . . –65 to 150_C
(D Suffix) . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)a
Plastic DIPb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625 mW
PLCCc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
Sidebrazed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to (V+) + 0.3 V
Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (VL) + 0.3 V
or 20 mA, whichever occurs first
Notes:
a. All leads soldered or welded to PC board.
b. Derate 8.3 mW/_C above 75_C.
c. Derate 6 mW/_C above 75_C.
d. Derate 16 mW/_C above 75_C.
VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) + 14 V
or 20 mA, whichever occurs first
Current (any terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Current(S or D) Pulsed l ms 10% Duty . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 15 V, V– = –3 V, VL = 5 V
WR = 0.8 V, RS, EN= 2 V
VANALOG
V– = –5 V
Tempb
Typc
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind
Maxd
Mind
8
–5
Maxd
Unit
8
V
Analog Switch
Analog Signal Rangeg
Drain-Source
On-Resistance
rDS(on)
Full
Room
Full
–5
45
90
120
90
120
9
9
rDS(on)
IS = –10 mA, VS = 0 V
VAIL = 0.8 V, VAIH = 2 V
Sequence Each Switch On
Source Off
Leakage Current
IS(off)
VS = 8 V, VD = 0 V, EN = 0.8 V
Room
Full
0.05
–5
–50
5
50
–5
–50
5
50
Drain Off
Leakage Current
ID(off)
VS = 0 V, VD = 8 V, EN = 0.8 V
Room
Full
0.1
–20
–500
20
500
–20
–100
20
100
Drain On
Leakage Current
ID(on)
VS = VD = 8 V
Room
Full
0.1
–20
–1000
20
1000
–20
–200
20
200
Resistance Match
Between Channels
Room
nA
Digital Control
Input Voltage High
VAIH
Full
Input Voltage Low
VAIL
Full
Address Input Current
IAI
Address Output Current
IAO
2
2
0.8
–1
–10
1
10
0.8
VAI = 0 V, or 2 V or 5 V
Room
Full
–0.1
–1
–10
VAO = 2.7 V
Room
–21
VAO = 0.4 V
Room
3.5
PLCC
Room
28
40
40
DIP
Room
31
45
45
PLCC
Room
3
5
4
DIP
Room
4
PLCC
Room
6
DIP
Room
8
Room
Full
160
Room
Full
80
–2.5
2.5
1
10
V
A
–2.5
mA
2.5
Dynamic Characteristics
On State Input
Capacitanceg
Off State Input
Capacitanceg
CS(on)
See Figure 11
CS(off)
See Figure 12
Off State Output
Capacitanceg
CD(off)
Transition Time
tTRANS
Break-Before-Make
Interval
tOPEN
See Figure 4
5
10
8
300
500
300
500
10
50
25
50
25
EN, WR Turn On Time
tON
See Figure 2 and 3
Room
Full
150
300
500
300
500
EN, Turn Off Time
tOFF
See Figure 2
Room
Full
105
175
300
175
300
Qi
See Figure 5
Room
–70
Charge Injection
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4
pF
ns
pC
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
DG534A/538A
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 15 V, V– = –3 V, VL = 5 V
WR = 0.8 V, RS, EN= 2 V
Tempb
Typc
PLCC
Room
–75
DIP
Room
–65
PLCC
Room
–97
DIP
Room
–87
PLCC
Room
–80
DIP
Room
–70
PLCC
Room
–77
DIP
Room
–72
PLCC
Room
–77
DIP
Room
–72
RIN = 10 , RL = 10 k
f = 5 MHz, See Figure 10
Room
–84
RIN = RL = 75
f = 5 MHz, See Figure 10
Room
–84
RL = 50 , See Figure 6
Room
500
Room
Full
0.6
Room
Full
0.6
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics (Cont’d)
Chip Disabled Crosstalkf
Adjacent Input Crosstalkf
XTALK(CD)
XTALK(AI)
RL = 75 f = 5 MHz
EN = 0.8 V
See Figure 8
RIN = 10
RL = 10 k
f = 5 MHz
SeeFigure 9
RIN = 75 , RL = 75
f = 5 MHz
See Figure 7
All Hostile Crosstalk
XTALK(AH)
RIN = 10
RL = 10 k
f = 5 MHz
See Figure 7
RIN = 75 , RL = 75
f = 5 MHz
See Figure 7
Differential Crosstalk
Bandwidth
XTALK(DIFF)
BW
dB
MHz
Power Supplies
Positive Supply Current
Negative Supply Current
Functional Check of
Maximum Operating
Supply Voltage Range
Logic Supply Current
I+
I–
Any One Channel Selected with Address Inputs at GND or 5 V
V+ to V–
2
5
–1.8
–2
2
5
mA
–1.8
–2
Full
10
21
10
Full
–5.5
0
–5.5
0
V+ to GND
Full
10
21
10
21
IL
Full
150
tRW
Room
Full
–22
tMPW
Room
Full
60
tDW
Room
Full
20
–20
25
V– to GND
Functional Test Only
500
21
500
V
A
Timing
Reset to Write
WR, RS
Minimum Pulse Width
A0, A1, EN
Data Valid to Strobe
See Figure 1
A0, A1, EN
Data Valid after Strobe
tWD
Room
Full
Address Bus Tri-Statee
tAZ
Room
Address Bus Output
tAO
Room
95
Address Bus Input
tAI
Room
110
50
50
200
200
100
100
50
50
ns
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Defined by system bus requirements.
f.
Each individual pin shown as GND must be grounded.
g. Guaranteed by design, not subject to production test.
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
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DG534A/538A
Vishay Siliconix
CONTROL CIRCUITRY
SA1
SA2
SA3
SA4
DA
DB
SA1 – SA4
SB1 – SB4
SB1
SB2
SB3
SB4
V–
DA, DB
V–
Decode
A0
EN
A0
A1
A1
A2
A2
V–
Latch
VREF
8/4
I/O
Decode
Tri-State
Buffer
VL
V–
VREF
VREF
*
V+
I/O
V–
*
EN
VREF
VREF
VREF
VREF
VREF
VL
A0
A1
A2
RS
WR
VL
*Typical all Readback (AX, EN) pins
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Document Number: 70069
S-05734—Rev. G, 29-Jan-02
DG534A/538A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Currents vs. Temperature
Leakage vs. Temperature
1 A
1.4
1.0
V+ = 15 V
V– = –3 V
VL = 5 V
I+
100 nA
0.6
10 nA
IL
Leakage
Current (mA)
V+ = 15 V
V– = –3 V
VL = 5 V
0.2
–0.2
ID(on)
1 nA
ID(off)
100 pA
I–
–0.6
IS(off)
10 pA
–1.0
1 pA
–1.4
–40
–20
0
20
40
60
80
100
120
–40
–20
0
Temperature (_C)
r DS(on)– Drain-Source On-Resistance ( )
(Source)
Current (mA)
80
100
120
70
VAO = 0.4 V
0
–8
–16
VAO = 2.7 V
(Sink)
V+ = 15 V
V– = –3 V
VL = 5 V
–24
–32
VD = 0 V
VL = 5 V
IS = –10 mA
V+ = 10 V
60
V+ = 12 V
50
V+ = 15 V
40
30
–40
–20
0
20
40
60
80
100
–6
120
–5
–4
–3
–2
–1
0
V– – Negative Supply (V)
Temperature (_C)
rDS(on) vs. VD and Temperature
Adjacent Input Crosstalk vs. Frequency
200
–100
V+ = 15 V
V– = –3 V
VL = 5 V
IS = – 10 mA
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = 10
RL = 10 k
DIP
–80
140
X TALK(AI) (dB)
r DS(on)– Drain-Source On-Resistance ( )
60
rDS(on) vs. V–, V+
Address, EN Output Current vs. Temperature
160
40
Temperature (_C)
8
180
20
25_C
120
100
125_C
80
PLCC
–60
–40
60
40
–55_C
–20
20
–2
0
2
4
6
VD – Drain Voltage (V)
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
8
10
1
10
100
f – Frequency (MHz)
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DG534A/538A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Adjacent Input Crosstalk vs. Frequency
Adjacent Input Crosstalk vs. Frequency
–100
–100
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = RL = 75
PLCC
–60
PLCC
–80
X TALK(AI) (dB)
X TALK(AI) (dB)
–80
DIP
–40
DIP
–60
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = 10
RL = 10 k
–40
–20
–20
1
10
100
1
10
f – Frequency (MHz)
f – Frequency (MHz)
All Hostile Crosstalk vs. Frequency
–100
–80
–80
PLCC
X TALK(AH) (dB)
X TALK(AH) (dB)
All Hostile Crosstalk vs. Frequency
–100
DIP
–60
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = 10
RL = 10 k
–40
100
PLCC
DIP
–60
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = RL = 75
–40
–20
–20
1
10
1
100
10
f – Frequency (MHz)
100
f – Frequency (MHz)
Differential Crosstalk vs. Frequency
Differential Crosstalk vs. Frequency
–100
–100
–80
–80
PLCC
–60
X TALK(DIFF) (dB)
X TALK(DIFF) (dB)
PLCC
DIP
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = 10
RL = 10 k
–40
V+ = 15 V
V– = –3 V
VL = 5 V
RIN = 75
RL = 75
–40
–20
–20
1
10
f – Frequency (MHz)
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8
DIP
–60
100
1
10
100
f – Frequency (MHz)
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
DG534A/538A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Times vs. Temperature
Transition Time vs. Temperature
225
250
200
225
200
175
Time (ns)
Time (ns)
tON
150
tOFF
125
tTRANS
175
150
125
100
tBBM
100
75
75
50
–40
–20
0
20
40
60
80
100
120
–40
Temperature (_C)
–20
0
20
40
60
80
100
120
Temperature (_C)
OUTPUT TIMING REQUIREMENTS
WR
tMPW
3V
0V
tWD
tDW
3V
A0, A1, A2, EN
Don’t Care
Write Data
Don’t Care
0V
Writing Data to Device
WR
3V
0V
3V
A0, A1, A2, EN
Don’t Care
New Data
Don’t Care
0V
RS
3V
0V
tMPW
tRW
Delay Time Required after Reset before Write
WR
3V
0V
3V
A0, A1, A2, EN
Driven Bus
Hi Z
Device Data* Out
Hi Z
Driven Bus
0V
I/O
3V
0V
Reading Data From Device
tAZ
tAO
tAI
FIGURE 1.
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
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DG534A/538A
Vishay Siliconix
TEST CIRCUITS
+15 V
+
10 F
Logic Input
tr