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DG643DJ

DG643DJ

  • 厂商:

    TFUNK(威世)

  • 封装:

    DIP16

  • 描述:

    IC VIDEO SWITCH SPDT 16DIP

  • 数据手册
  • 价格&库存
DG643DJ 数据手册
DG641, DG642, DG643 Vishay Siliconix Low On-Resistance Wideband/Video Switches DESCRIPTION FEATURES The DG641, DG642, DG643 are high performance monolithic video switches designed for switching wide bandwidth analog and digital signals. DG641 is a quad SPST, DG642 is a single SPDT, and DG643 is a dual SPDT function. These devices have exceptionally low on-resistances (5 typ-DG642), low capacitance and high current handling capability. • • • • • • Wide bandwidth: 500 MHz Low crosstalk at 5 MHz: - 85 dB Low RDS(on): 5 , DG642 TTL logic compatible Fast switching: tON 50 ns Single supply compatibility • High current: 100 mA, DG642 BENEFITS To achieve TTL compatibility, low channel capacitances and fast switching times, the DG641, DG642, DG643 are built on the Vishay Siliconix proprietary D/CMOS process. Each switch conducts equally well in both directions when on, and blocks up to 14 Vp-p when off. An epitaxial layer prevents latchup. • • • • • • High precision Improved frequency response Low insertion loss Improved system performance Reduced board space Low power consumption APPLICATIONS • • • • • • • • RF and video switching RGB switching Video routing Cellular communications ATE Radar/FLIR systems Satellite receivers Programmable filters FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC IN1 Dual-In-Line and SOIC 16 IN2 1 IN1 1 16 IN2 D1 2 15 D2 Dual-In-Line and SOIC D1 2 15 D2 S1 3 14 S2 S1 1 8 IN GND 3 14 GND V- 4 13 V+ D1 2 7 V+ S1 4 13 S2 V- 3 6 D2 V- 5 12 V+ GND 4 5 S2 S4 6 11 S3 GND 7 10 GND D4 8 9 D3 DG641 GND 5 12 GND S4 6 11 S3 D4 7 10 D3 IN4 8 9 DG642 Top View IN3 DG643 Top View Top View TRUTH TABLE (DG641) Logic 0 1 Switch OFF ON Logic “0” 0.8 V Logic “1”  2.4 V Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 TRUTH TABLE (DG642) Logic 0 1 Logic “0” 0.8 V Logic “1”  2.4 V SW1 OFF ON SW2 ON OFF TRUTH TABLE (DG643) Logic 0 1 SW1, SW2 OFF ON SW3, SW4 ON OFF Logic “0” 0.8 V Logic “1”2.4 V www.vishay.com 1 DG641, DG642, DG643 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG641 - 40 °C to 85 °C 16-Pin Plastic DIP DG641DJ 16-Pin Narrow SOIC DG641DY DG642 - 40 °C to 85 °C 8-Pin Plastic DIP DG642DJ 8-Pin Narrow SOIC DG642DY DG643 - 40 °C to 85 °C 16-Pin Plastic DIP DG643DJ 16-Pin Narrow SOIC DG643DY ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol V+ to V- Limit Unit - 0.3 to 21 V+ to GND - 0.3 to 21 V- to GND - 19 to + 0.3 (V-) - 0.3 V to (V+) + 0.3 V or 20 mA, whichever occurs first (V-) - 0.3 V to (V+) + 14 V or 20 mA, whichever occurs first 20 Digital Inputs VS, VD Continuous Current (Any terminal except S or D) Continuous Current S or D Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) DG641, DG643 75 DG642 100 DG641, DG643 200 DG642 mA 300 Storage Temperature - 65 to 125 Power Dissipation (Package)b V 8-Pin Plastic DIP and Narrow SOICc 300 16-Pin Plastic DIPd 470 16-Pin Narrow SOICe 600 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 7.6 mW/°C above 75 °C. d. Derate 6 mW/°C above 75 °C. e. Derate 80 mW/°C above 75 °C. SCHEMATIC DIAGRAM (Typical Channel) V+ GND 5V Reg S IN D V- Figure 1. www.vishay.com 2 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 DG641, DG642, DG643 Vishay Siliconix SPECIFICATIONS (for DG641 and DG643) Parameter Analog Switch Symbol Analog Signal Ranged VANALOG Drain-Source On-Resistance RDS(on) Match RDS(on) RDS(on) Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 3 V VINH = 2.4 V, VINL = 0.8 Ve Limits - 40 °C to 85 °C Temp.a Min.b V- = - 5 V, V+ = 12 V Full -5 8 V- = GND V, V+ = 12 V Full Room Full Room Room Full Room Full Room Full 0 - 10 - 100 - 10 - 100 - 10 - 100 8 15 20 2 10 100 10 100 10 100 2.4 IS = - 10 mA, VD = 0 V Source Off Leakage Current IS(off) VS = 0 V, VD = 10 V Drain Off Leakage Current ID(off) VS = 10 V, VD = 0 V Channel On Leakage Current ID(on) VS = V D = 0 V Typ.c 8 1 - 0.02 - 0.02 - 0.1 Max.b Unit V  nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL IIN VIN = GND or V+ Full Room Full On State Input Capacitanced CS(on) VS = V D = 0 V Off State Output Capacitanced CS(off) VS = 0 V Off State Input Capacitanced CD(off) BW Input Current 0.05 0.8 1 20 Room 10 20 Room 4 12 VD = 0 V Room 4 12 RL = 50 see figure 6 Room Room Full Room Full 500 50 -1 - 20 V µA Dynamic Characteristics Bandwidth Turn On Time tON Turn Off Time tOFF Charge Injection Q Off Isolation OIRR All Hostie Crosstalk XTALK RL = 1 kCL = 35 pF see figure 2 28 CL = 1000 pF, VD = 0 V see figure 3 RIN = 75 RL = 75  f = 5 MHz, see figure 4 RIN = 10 , RL = 75  f = 5 MHz, see figure 5 Room - 19 Room - 60 Room - 87 3.5 VIN = 0 V or VIN = 5 V Room Full Room Full pF MHz 70 140 50 85 ns pC dB Power Supplies Positive Supply Current I+ Negative Supply Current I- -6 -9 6 9 -3 mA Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 www.vishay.com 3 DG641, DG642, DG643 Vishay Siliconix SPECIFICATIONS (for DG642) Parameter Analog Switch Symbol Analog Signal Ranged VANALOG Drain-Source On-Resistance RDS(on) Match RDS(on) RDS(on) Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 3 V VINH = 2.4 V, VINL = 0.8 Ve Limits - 40 °C to 85 °C Temp.a Min.b V- = - 5 V, V+ = 12 V Full -5 8 V- = GND V, V+ = 12 V Full Room Full Room Room Full Room Full Room Full 0 - 10 - 200 - 10 - 200 - 10 - 200 8 8 9 1 10 200 10 200 10 200 2.4 IS = - 10 mA, VD = 0 V Source Off Leakage Current IS(off) VS = 0 V, VD = 10 V Drain Off Leakage Current ID(off) VS = 10 V, VD = 0 V Channel On Leakage Current ID(on) VS = V D = 0 V Typ.c 5 0.5 - 0.04 - 0.04 - 0.2 Max.b Unit V  nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL Input Current IIN VIN = GND or V+ Full Room Full -1 - 20 0.05 0.8 1 20 40 V µA Dynamic Characteristics On State Input Capacitanced CS(on) VS = V D = 0 V Room 19 Off State Input Capacitanced CS(off) VD = 0 V Room 8 20 Off State Output Capacitanced CD(off) VS = 0 V Room 8 20 BW RL = 50 see figure 6 Room Room Full Room Full 500 60 Bandwidth Turn On Time tON Turn Off Time tOFF Charge Injection Q Off Isolation All Hostie Crosstalk XTALK(AH) RL = 1 kCL = 35 pF see figure 2 40 CL = 1000 pF, VD = 0 V see figure 3 RIN = 75 RL = 75  f = 5 MHz, see figure 4 RIN = 10 , RL = 75  f = 5 MHz, see figure 5 Room - 40 Room - 63 Room - 85 3.5 VIN = 0 V or VIN = 5 V Room Full Room Full pF MHz 100 160 60 100 ns pC dB Power Supplies Positive Supply Current I+ Negative Supply Current I- -6 -9 6 9 -3 mA Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 DG641, DG642, DG643 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 nA 6 5 10 nA 4 I+ I S(off) 2 1 I D(off) , Current (mA) 3 IGND 0 1 nA 100 pA -1 10 pA -2 I- -3 1 pA -4 -5 - 55 - 35 - 15 5 25 45 65 85 105 0.1 pA - 55 125 0 - 25 25 Temperature (°C) 75 100 125 9 11 Leakages vs. Temperature Supply Current vs. Temperature 20 40 V+ = 15 V V- = - 3 V R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance () 50 Temperature (°C) 30 125 °C 20 25 °C - 55 °C 10 V+ = 15 V V- = - 3 V 15 125 °C 10 25 °C - 55 °C 5 0 0 -3 -1 1 3 5 7 9 -3 11 -1 1 3 5 7 VD - Drain Voltage (V) VD - Drain V oltage (V) DG641, DG643 RDS(on) vs. Drain Voltage DG642 RDS(on) vs. Drain Voltage 120 22 20 100 V+ = 15 V, V- = - 15 V VL = 5 V, V IN = 3 V Pulse tON t ON, t OFF (ns) C (pF) 18 16 14 DG642 12 80 tOFF 60 40 10 20 DG641, DG643 8 6 0 2 4 6 8 (VD) - (V-) On Capacitance Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 10 12 0 - 55 - 40 - 20 0 20 40 60 80 100 120 Temperature (°C) Off Isolation www.vishay.com 5 DG641, DG642, DG643 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 140 80 120 100 tON V- = 0 V VL = 5 V VIN = 3 V DG419 Source 1 80 (dB) t ON, t OFF (ns) 70 DG417, DG418, DG419 Source 2 60 60 40 50 tOFF V+ = 15 V V- = - 15 V VL = 5 V 20 0 40 ± 10 ± 11 ± 12 ± 13 ± 14 ± 15 ± 16 100 10 k 1k Supply Voltage (V) 100 k 1M 10 M 100 M f - Frequency (Hz) All Hostile Crosstalk Charge Injection vs. VD 90 20 80 60 t (ns) tON 50 40 30 tOFF 20 18 V+ - Positive Supply Voltage (V) 70 16 Operating Voltage Area 14 12 10 0 - 55 - 25 0 25 50 75 100 10 125 0 -1 -2 Temperature (°C) -3 -4 -5 -6 V- - Negative Supply (V) Switching Times vs. Temperature Operating Supply Voltage Range TEST CIRCUITS + 15 V 3V tr < 20 ns tf < 20 ns 3V V+ Logic Input D S 50 % VO IN 3V GND V- RL 1 k CL 35 pF 90 % Switch Output 90 % 0 tON -3V tOFF Figure 2. Switching Time www.vishay.com 6 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 DG641, DG642, DG643 Vishay Siliconix TEST CIRCUITS + 15 V Rg S D VO IN Vg VO VO V+ CL 1000 pF 3V INX ON ON OFF V- GND V O = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x VO -3V Figure 3. Charge Injection + 15 V C V+ S VS D VO Rg = 50  RL IN 0 V, 2.4 V GND V- C -3V Off Isolation = 20 log VS VO Figure 4. Off Isolation DG641 RIN 10  DG642 S1 D1 S2 D2 S3 D3 S4 VOUT RL 75  RIN 10  D1 VOUT S2 D2 RL 75  RL RL D4 RL Signal Generator 75  RL Signal Generator 75  S1 V "0" (b) V "1" XTALK(AH) = 20 log10 (a) VOUT V Figure 5. All Hostile Crosstalk - XTALK(AH) Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 www.vishay.com 7 DG641, DG642, DG643 Vishay Siliconix TEST CIRCUITS + 15 V V+ S Signal Generator 50  D VOUT V- RL 50  -3V Figure 6. Bandwidth APPLICATIONS 2. The value of on capacitance [CS(on)] may be reduced. A property known as ‘the body-effect’ on the DMOS switch devices causes various parametric effects to occur. One of these effects is the reduction in CS(on) for an increasing V body-source. Note however that to increase V- normally requires V+ to be reduced (since V+ to V- = 21 V max.). A reduction in V+ causes an increase in rDS(on), hence a compromise has to be achieved. It is also useful to note that tests indicate that optimum video linearity performance (e.g., differential phase and gain) occurs when V- is around - 3 V. 3. V- eliminates the need to bias the analog signal using potential dividers and large coupling capacitors. Device Description The DG641, DG642, DG643 switches offer true bidirectional switching of high frequency analog or digital signals with minimum signal crosstalk, low insertion loss, and negligible non-linearity distortion and group delay. Built on the Siliconix D/CMOS process, these switches provide excellent off-isolation with a bandwidth of around 500 MHz. The silicon-gate D/CMOS processing also yields fast switching speeds. An on-chip regulator circuit maintains TTL input compatibility over the whole operating supply voltage range shown, easing control logic interfacing. Circuit layout is facilitated by the interchangeability of source and drain terminals. Frequency Response A single switch on-channel exhibits both resistance [RDS(on)] and capacitance [CS(on)]. This RC combination has an attenuation effect on the analog signal - which is frequency dependent (like an RC low-pass filter). The - 3 dB bandwidth of the DG641, DG642, DG643 is typically 500 MHz (into 50 ). Power Supplies Power supply flexibility is a useful feature of the DG641, DG642, DG643 series. It can be operated from a single positive supply (V+) if required (V- connected to ground). Decoupling It is an established rf design practice to incorporate sufficient bypass capacitors in the circuit to decouple the power supplies to all active devices in the circuit. The dynamic performance of the DG641, DG642, DG643 series is adversely affected by poor decoupling of power supply pins. Also, of even more significance, since the substrate of the device is connected to the negative supply, adequate decoupling of this pin is essential. Suitable decoupling capacitors are 1- to 10 µF tantalum bead, plus 10- to 100-nF ceramic or polyester. Rules: 1. Note that the analog signal must not exceed V- by more than - 0.3 V to prevent forward biasing the substrate p-n junction. The use of a V- supply has a number of advantages: Decoupling capacitors should be incorporated on all power supply pins (V+, V-). (see figure 7). 2. They should be mounted as close as possible to the device pins. 1. 3. Capacitors should be of a suitable type with good high frequency characteristics - tantalum bead and/or ceramic disc types are adequate. It allows flexibility in analog signal handling, i.e., with V- = - 5 V and V+ = 12 V; up to ± 5 V ac signals can be controlled. www.vishay.com 8 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 DG641, DG642, DG643 Vishay Siliconix APPLICATIONS Board Layout + 15 V PCB layout rules for good high frequency performance must also be observed to achieve the performance boasted by these analog switches. Some tips for minimizing stray effects are: + C1 C2 V+ S1 S2 D1 Use extensive ground planes on double sided PCB, separating adjacent signal paths. Multilayer PCB is even better. 2. Keep signal paths as short as practically possible, with all channel paths of near equal length. 3. Careful arrangement of ground connections is also very important. Star connected system grounds eliminate signal current, flowing through ground path parasitic resistance, from coupling between channels. D2 DG64X S3 1. D3 S4 D4 GNDs V- C1 C1 = 10 µF Tantalum C2 = 0.1 µF Ceramic C2 + -3V Figure 7. Supply Decoupling Figure 8 shows a 4-channel video multiplexer using a DG641. In Figure 9, two coax cables terminated on 75  bring two video signals to the DG642 switch. The two drains tied together lower the on-state capacitance. An Si582 video amplifier drives a double terminated 75  cable. The double terminated coax cable eliminates line reflections. + 15 V V+ CH1 CH2 Si582 75  + CH3 75  A=2 75  CH4 - 75  DIS 250  DG641 V- 75  250  -3V TTL Channel Select Figure 8. 4 by 1 Video Multiplexing Using the DG641 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 www.vishay.com 9 DG641, DG642, DG643 Vishay Siliconix APPLICATIONS + 15 V V+ CH1 CH2 S1 D1 S2 D2 Si582 + VOUT 75  A=2 75  75  RL 75  DIS DG642 250  V- 250  TTL Channel Select -3V Figure 9. 2-Channel Video Selector Using the DG642 IN2 fc SELECT S2 D2 C1 S3 D3 C2 1/ 2 CH1 CH2 CH SELECT D1 S1 D4 S4 DG643 R3 R1 - IN1 LF401 1/ 2 VOUT + DG643 R2 fc  1 2 R 3C x Figure 10. Active Low Pass Filter with Selectable Inputs and Break Frequencies Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70058. www.vishay.com 10 Document Number: 70058 S11-0154-Rev. F, 31-Jan-11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 8ĆLEAD 8 7 6 5 E1 1 2 Dim A A1 B B1 C D E E1 e1 eA L Q1 S 3 E 4 D S Q1 A MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 9.02 10.92 0.355 0.430 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.76 1.65 0.030 0.065 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5478 A1 15° MAX e1 B1 Document Number: 71259 05-Jul-01 L B C NOTE: End leads may be half leads. eA www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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