DG721DQ-T1-GE3

DG213 Vishay Siliconix Quad Complementary CMOS Analog Switch      




















22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 45
Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: 85 ns Low Charge Injection—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Low Cost Industrial Instrumentation Test Equipment Communications Systems Computer Peripherals Portable Instruments Sample-and-Hold Circuits    The versatile DG213 analog switch has two NC and two NO switches. It can be used in various configurations, including four single-pole single-throw (SPST), two single-pole double-throw (SPDT), one “T” switch, one DPDT, etc. This device is fabricated in a Vishay Siliconix’ proprietary high-voltage silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This analog switch was designed for a wide variety of general purpose applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. These switches can handle up to
22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All switches feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. For additional information, please refer to Application Note AN208 (FaxBack document #70606).              IN1 1 16 IN2 Logic SW1, SW4 D1 2 15 D2 0 OFF ON 1 ON OFF S1 3 14 S2 V– 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Document Number: 70662 S-00787—Rev. F, 17-Apr-00 SW2, SW3 Logic “0”  0.8 V Logic “1”  2.4 V      Temp Range Package Part Number 16-Pin Plastic DIP DG213DJ –40 40 to 85C 16-Pin Narrow SOIC DG213DY 16-Pin TSSOP DG213DQ www.vishay.com  FaxBack 408-970-5600 4-1 DG213 Vishay Siliconix      Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75C d. Derate 7.6 mW/C above 75C   D Suffix Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve –40 to 85C Tempa Minc Full V– Typb Maxc Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) VD =
10 V,, IS = 1 mA DrDS(on) 60 Room Full 45 Room 1 2 85 Source Off Leakage Current IS(off) VS =
14 V, VD = 14 V Room Full –0.5 –5
0.01 0.5 5 Drain Off Leakage Current ID(off) VD =
14 V, VS = 14 V Room Full –0.5 –5
0.01 0.5 5 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full –0.5 –10
0.02 0.5 10 2.4 W nA A Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL V VINH or VINL CIN Full 0.8 –1 1 Room 5 VS = 10 V See Figure S Fi 2 Room 85 130 Room 55 100 mA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay tD VS = 10 V, See Figure 3 Room Charge Injection Q CL = 1000 pF, Vg= 0 V, Rg = 0 W Room 15 1 25 Room 5 Room 5 Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16 Off Isolation OIRR 90 XTALK CL = 15 p pF,, RL = 50 W VS = 1 VRMS, f = 100 kH kHz Room Channel-to-Channel Crosstalk Room 95 www.vishay.com
FaxBack 408-970-5600 4-2 VS = 0 V, f = 1 MHz ns pC F pF dB Document Number: 70662 S-00787—Rev. F, 17-Apr-00 DG213 Vishay Siliconix     D Suffix Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve –40 to 85C Tempa Minc Typb Maxc Unit Power Supply Positive Supply Current Room Full I+ VIN = 0 or 5 V Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full Power Supply Range for Continuous Operation 1 5 –1 –5 mA A 1 5
3
22 V Typb Maxc Unit           D Suffix Test Conditions Unless Otherwise Specified Parameter –40 to 85C V+ = 12 V, V– = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minc VANALOG Full V– V+ V rDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full 90 110 140 W Room 125 200 45 100 Symbol Analog Switch Analog Signal Ranged Drain-Source On-Resistance Dynamic Characteristics Turn-On Time tON See Figure 2 Turn-Off Time tOFF Room Break-Before-Make Time Delay tD VS = 8 V, See Figure 3 Room Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room 50 ns 80 4 pC Power Supply Positive Supply Current Room Full I+ VIN = 0 or 5 V Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full Power Supply Range for Continuous Operation 1 5 –1 –5 mA A 1 5 3 40 V Notes: a. Room = 25C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Document Number: 70662 S-00787—Rev. F, 17-Apr-00 www.vishay.com
FaxBack 408-970-5600 4-3 DG213 Vishay Siliconix           rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 100 r DS(on)– Drain-Source On-Resistance (
) r DS(on)– Drain-Source On-Resistance (
) 110 100 90
5 V 80 70
10 V 60
15 V 50 40
20 V 30 20 –8 –4 0 4 8 12 16 80 70 60 125C 85C 50 40 25C 30 –55C 20 10 0 –15 10 –20 –16 –12 V+ = 15 V V– = –15 V 90 20 –10 –5 rDS(on) vs. VD and Single Power Supply Voltages 10 15 40 V– = 0 V VL = 5 V 5V 250 V+ = 22 V V– = –22 V TA = 25C 30 20 I S,I D – Current (pA) r DS(on)– Drain-Source On-Resistance (
) 5 Leakage Currents vs. Analog Voltage 300 200 7V 150 10 V 100 12 V ID(on) 10 IS(off), ID(off) 0 –10 –20 50 –30 0 0 2 4 6 8 10 –40 –20 12 –15 VD – Drain Voltage (V) –10 –5 0 5 10 15 20 VANALOG – Analog Voltage (V) QS, QD – Charge Injection vs. Analog Voltage Leakage Current vs. Temperature 30 1 nA V+ = 15 V V– = –15 V VS, VD =
14 V 20 100 pA Q – Charge (pC) I S,I D – Current 0 VD – Drain Voltage (V) VD – Drain Voltage (V) IS(off), ID(off) 10 pA 10 0 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V –10 –20 1 pA –55 –35 –15 5 25 45 65 Temperature (C) www.vishay.com
FaxBack 408-970-5600 4-4 85 105 125 –30 –15 –10 –5 0 5 10 15 VANALOG – Analog Voltage (V) Document Number: 70662 S-00787—Rev. F, 17-Apr-00 DG213 Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Off Isolation vs. Frequency 120 V+ = +15 V V– = –15 V 110 100 OIRR (dB) 90 RL = 50
80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX VL Level Shift/ Drive V– V+ INX DX GND V– FIGURE 1. TEST CIRCUITS +15 V V+ VS = +2 V D S VO Logic Input 3V tr