DG9263DY

DG9262, DG9263 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION FEATURES The DG9262, DG9263 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (RDS(on): 40 ) and small physical size, the DG9262, DG9263 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9262, DG9263 is built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7 is 2000 V. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG9262, DG9263. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. • Halogen-free According to IEC 61249-2-21 Definition • Low Voltage Operation (- 2.7 V to 5 V) • Low On-Resistance - RDS(on): 40  • Fast Switching - tON: 35 ns, tOFF: 20 ns • Low Leakage - ICOM(on): 200-pA max. • Low Charge Injection - QINJ: 1 pC • Low Power Consumption • TTL/CMOS Compatible • ESD Protection > 2000 V (Method 3015.7) • Available in MSOP-8 and SOIC-8 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • • • BENEFITS • • • • Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION NC1 1 8 V+ NO1 1 8 V+ COM1 2 7 IN1 COM1 2 7 IN1 IN2 3 6 COM2 IN2 3 6 COM2 GND 4 5 NC2 GND 4 5 NO2 Top View Top View TRUTH TABLE - DG9263 TRUTH TABLE - DG9262 Logic Switch Logic Switch 0 On 0 Off 1 Off 1 On Logic “0” 0.8 V Logic “1” 2.4 V Logic “0” 0.8 V Logic “1” 2.4 V ORDERING INFORMATION Temp Range Package SOIC-8 - 40 °C to 85 °C MSOP-8 Part Number DG9262DY-E3 DG9262DY-T1 DG9262DY-T1-E3 DG9263DY-E3 DG9263DY-T1 DG9263DY-T1-E3 DG9262DQ-T1-E3 DG9263DQ-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Limit Parameter Unit - 0.3 to + 13 Reference V+ to GND V - 0.3 to (V+ + 0.3) IN, COM, NC, NOa Continuous Current (Any Terminal) ± 20 > 2000 V - 65 to 125 400 °C ESD (Method 3015.7) Storage Temperature (D Suffix) Power Dissipation (Packages)b mA ± 40 Peak Current (Pulsed at 1 ms, 10 % duty cycle) 8-Pin Narrow Body SOICc mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/°C above 75 °C. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 Ve D Suffix - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit 3 V Analog Switch Analog Signal Ranged VANALOG RDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA Room Full 50 80 140 RDS(on)Matchd RDS(on) VNO or VNC = 1.5 V Room 0.4 2 RDS(on) Flatnessd RDS(on) Flatness VNO or VNC = 1 and 2 V Room 4 8 INO/NC(off) VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V Room Full - 100 - 5000 5 100 5000 COM Off Leakage Currentg ICOM(off) VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V Room Full - 100 - 5000 5 100 5000 Channel-On Leakage Currentg ICOM(on) VCOM = VNO or VNC = 1 V/2 V Room Full - 200 - 10 000 10 200 10 000 Drain-Source On-Resistance NO or NC Off Leakage Currentg  pA Digital Control Input Current IINL or IINH Full 1 µA Room Full 50 120 200 Room Full 20 50 120 5 Dynamic Characteristics Turn-On Time tON VNO or VNC = 1.5 V Turn-Off Time tOFF Charge Injectiond QINJ Off-Isolation OIRR Crosstalk XTALK NC and NO Capacitance C(off) Channel-On Capacitance CCOM(on) COM-Off Capacitance CCOM(off) CL = 1 nF, VGEN = 0 V, RGEN = 0  RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz Room 1 Room - 74 Room - 90 Room 7 Room 20 Room 13 ns pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 3.3 V, VIN = 0 V or 3.3 V 12 V 1 µA Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guraranteed by 5 V leakage testing, not production tested. www.vishay.com 2 Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 Ve D Suffix - 40 °C to 85 °C Temp.a Min.b Full 0 Typ.c Max.b Unit 5 V Analog Switch Analog Signal Ranged VANALOG RDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA Room Full 30 60 75 RDS(on)Matchd RDS(on) VNO or VNC = 3.5 V Room 0.4 2 RDS(on) Flatnessf RDS(on) Flatness VNO or VNC = 1, 2 and 3 V Room 2 6 NO or NC Off Leakage Current INO/NC(off) VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V Room Full - 100 - 5000 10 100 5000 COM Off Leakage Current ICOM(off) VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V Room Full - 100 - 5000 10 100 5000 Channel-On Leakage Current ICOM(on) VCOM = VNO or VNC = 1 V/4 V Room Full - 200 - 10 000 Drain-Source On-Resistance  pA 200 10 000 Digital Control IINL or IINH Full 1 Turn-On Time tON Room Full 35 75 150 Turn-Off Time tOFF Room Full 20 50 100 Charge Injectiond QINJ Room 2 5 Off-Isolation OIRR Room - 74 Crosstalk XTALK Room - 90 NC and NO Capacitance C(off) Room 7 Room 20 Room 13 Input Current µA Dynamic Characteristics VNO or VNC = 3 V Channel-On Capacitance COM-Off Capacitance CD(on) CL = 1 nF, VGEN = 0 V, RGEN = 0  RL = 50 , CL = 5 pF, f = 1 MHz f = 1 MHz CCOM(off) ns pC dB pF Power Supply Power Supply Range Power Supply Current V+ I+ 2.7 V+ = 5.5 V, VIN = 0 V or 5.5 V 12 V 1 µA Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 3000 2.0 V+ = 3 V 1.5 2500 2000 0.5 I SUPPLY (A) Q INJ (pC) 1.0 0.0 - 0.5 1500 V+ = 5 V 1000 500 - 1.0 - 1.5 0 - 2.0 - 500 V+ = 3 V 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 4 5 Supply Current vs. VIN 10 nA - 40 1 nA - 60 OFF-Isolation (dB) I COM(off) (A) Charge Injection 100 pA ICOM(off) 10 pA 3 VIN VCOM ICOM(on) 1 pA - 80 - 100 - 120 0.1 pA 25 45 65 85 105 125 Temperature (°C) - 140 0.001 M Leakage Current vs. Temperature 0.01 M 0.1 M Frequency (Hz) 1M 10 M Off-Isolation vs. Frequency 80 2.5 2.0 V+ = 5 V 1.5 V+ = 3 V 60 ICOM 0.5 r DS(on) () I OFF (pA) 1.0 0.0 - 0.5 INO/NC 40 V+ = 5 V - 1.0 20 - 1.5 - 2.0 0 - 2.5 0 1 2 3 4 VCOM Off-Leakage vs. Voltage at 25 °C www.vishay.com 4 5 0 1 2 3 4 5 VCOM RDS vs. VCOM Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 70 80 V+ = 3 V 60 50 t ON / t OFF (ns) r DS(on) () tON 85 °C 60 25 °C 40 °C 40 40 30 tOFF 20 20 10 0 0.0 0.5 1.0 1.5 VCOM 2.0 2.5 0 - 60 3.0 - 30 0 30 60 90 120 Temperature (°C) RDS vs. VCOM Switching Time vs. Temperature 2.25 120 2.00 100 1.75 V IN (sw) T (ns) 80 60 tON 1.50 1.25 40 1.00 tOFF 20 0.75 0.50 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ tON/tOFF vs. Power Supply Voltage Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 5.0 2 3 4 5 6 V+ Input Switching Point vs. Power Supply Voltage www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input 50 % V+ NO or NC Switch Input tr < 20 ns tf < 20 ns 0V Switch Output COM VOUT 0.9 x V OUT Switch Output IN RL 300  GND Logic Input CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL V OUT = V COM R L + R ON Figure 1. Switching Time V+ Logic Input V+ V1 NO or NC COM1 NO or NC COM2 V2 tr < 5 ns tf < 5 ns 3V 0V RL 300  CL 35 pF GND VNC = V NO VO Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen VOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On Off On GND Q = VOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9262, DG9263 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM IN COM 0 V, 2.4 V NC or NO Off Isolation = 20 log RL GND V NC/NO VCOM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70862. Document Number: 70862 S11-1229–Rev. D, 20-Jun-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places Seating Plane ς A2 0.05 S C E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) N = 8L NOTES: 1. Die thickness allowable is 0.203"0.0127. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.25 - 0.38 8 0.25 0.30 0.33 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.65 BSC 1.95 BSC 0.40 0.55 8 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71244 12-Jul-02 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000