DG9411E
www.vishay.com
Vishay Siliconix
Powered-off Protection, 6 , 1.8 V to 5.5 V,
SPDT Analog Switch (2:1 Multiplexer)
DESCRIPTION
FEATURES
The DG9411E is a high performance single-pole,
double-throw (SPDT) analog switch designed for 1.8 V to
5.5 V operation with a single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance of 6 and switch off
capacitance of 7 pF at a 5 V power supply and low power
consumption, and fast switching speeds.
The DG9411E can handle both analog and digital signals
and permits signals with amplitudes of up to V+ to be
transmitted in either direction. Its control logic inputs can go
over V+ up to 5.5 V. It features break before make switching
performance.
A powered-off protection circuit is built into the switch to
prevent an abnormal current flow from COM pin to V+ during
the power-down condition. Each output pin can withstand
greater than 7 kV (human body model).
Operation temperature is specified from -40 °C to +85 °C.
The DG9411E is available in the compact SC-70-6L
package.
• Low switch on-resistance (6 )
• 1.8 V to 5.5 V single supply operation
Available
• Powered-off protection
• Control logic inputs can go over V+ up to 5.5 V
Available
• Low parasitic capacitance, 7 pF at switch off
• Low charge injection, 1 pC
• Break before make switching
• Latch-up performance exceeds 200 mA per JESD 78
• ESD tested
- 7000 V human body model (JS-001)
- 1000 V charge device model (JS-002)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS
• Battery powered devices
• Smartphones and tablets
• Consumer and computing
• Portable instrumentation
• Medical equipment
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
SC-70
TRUTH TABLE
IN
1
6
NO (Source1)
V+
2
5
COM
3
4
NC (Source2)
GND
Top view
Device marking
H7
S18-0419-Rev. C, 23-Apr-18
LOGIC
NC
NO
0
On
Off
1
Off
On
Notes
• Logic “0” 0.8 V
• Logic “1” 2.4 V
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
PART NUMBER
-40 °C to +85 °C
SC-70-6
DG9411EDL-T1-GE3
Document Number: 76294
1
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DG9411E
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Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
PARAMETER
V+, COM, NC, NO, IN reference to GND
LIMIT
UNIT
-0.3 to 6
V
Continuous current (any terminal)
± 50
Peak current (pulsed at 1 ms, 10 % duty cycle)
± 200
Storage temperature
Power dissipation (packages) a
6-pin SC-70 b
-65 to +150
°C
250
mW
ESD / HBM
JS-001
7000
ESD / CDM
JS-002
1000
Per JESD78 with 1.5 x voltage clamp
200
Latch up
mA
V
mA
Notes
a. All leads welded or soldered to PC board
b. Derate 3.1 mW/°C above 70 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, ± 10 %
VIN = 0.8 V or 2.4 V e
LIMITS
-40 °C to +85 °C
TEMP. a
UNIT
MIN. b
TYP. c
MAX. b
Full
0
-
V+
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
Room
Full
-
6
8
8
10
V+ = 5 V, VCOM = 1.5 V, 3.5 V, INO, INC = 10 mA
Room
-
0.4
-
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
V+ = 5.5 V,
VNO, VNC = VCOM = 1 V / 4.5 V
V+ = 0 V, VCOM = 5 V, NO/NC open, VIN = GND
V+ = 0 V, VNO, VNC = 5 V, COM open, VIN = GND
Room
Room
Full
Room
Full
Room
Full
Full
Full
-1.5
-4
-1
-4
-1
-4
-
0.04
-
0.2
1.5
4
1
4
1
4
2
2
VIN = 0 V or V+
Full
Full
Full
Full
2.4
-1
6
-
0.8
1
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
1
-
10
8
1
-78
-77
7
7
13
30
32
24
26
-
pC
Full
-
0.004
1
μA
Analog Switch
Analog signal range d
Drain-source on-resistance d
RDS(on) flatness d
RDS(on) match d
Switch-off leakage current f
VNO, VNC
VCOM
RDS(on)
RDS(on)
flatness
RDS(on)
INO(off),
INC(off)
ICOM(off)
Channel-on leakage current f
Power-down leakage
Digital Control
Input high voltage
Input low voltage
Input capacitance d
Input current
Dynamic Characteristics
ICOM(on)
IPD
VINH
VINL
CIN
IINL or IINH
Turn-on time d
tON
Turn-off time d
tOFF
Break-before-make time d
Charge injection d
Off-isolation d
Crosstalk d
NO, NC off capacitance d
Channel-on capacitance d
Power Supply
Power supply current d
S18-0419-Rev. C, 23-Apr-18
tBBM
QINJ
OIRR
XTALK
CNO(off)
CNC(off)
CON
I+
V+ = 5.5 V,
VNO, VNC = 1 V / 4.5 V, VCOM = 4.5 V / 1 V
VNO or VNC = 3 V, RL = 300 , CL = 35 pF
CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0
RL = 50 , CL = 5 pF, f = 1 MHz
VIN = 0 V or V+, f = 1 MHz
VIN = 0 V or V+
V
nA
μA
V
pF
μA
ns
dB
pF
Document Number: 76294
2
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %
VIN = 0.4 V or 2 V e
LIMITS
-40 °C to +85 °C
TEMP. a
UNIT
MIN. b
TYP. c
MAX. b
Full
0
-
V+
Room
-
13
22
Full
-
15
24
-
1.4
-
Analog Switch
Analog signal range d
VNO, VNC
VCOM
V
Drain-source on-resistance d
RDS(on)
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA
RDS(on) flatness d
RDS(on)
flatness
V+ = 3 V, VCOM = 0 V to V+, INO, INC = 10 mA
Room
RDS(on) match d
RDS(on)
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA
Room
-
0.03
0.35
Room
-400
-
400
Full
-4
-
4
nA
Room
-800
-
800
pA
Switch-off leakage current f
INO(off),
INC(off)
ICOM(off)
Channel-on leakage current f
ICOM(on)
V+ = 3.3 V,
VNO, VNC = 1 V / 3 V, VCOM = 3 V / 1 V
V+ = 3.3 V,
VNO, VNC = VCOM = 1 V / 3 V
pA
Full
-8
-
8
nA
Room
-800
-
800
pA
Full
-8
-
8
nA
Digital Control
Input high voltage
VINH
Full
2
-
-
Input low voltage
VINL
Full
-
-
0.4
Input capacitance d
Input current
CIN
IINL or IINH
V
Full
-
6
-
pF
Full
-1
-
1
μA
Room
-
13
34
Full
-
-
37
Room
-
9
20
Full
-
-
22
Room
1
-
-
CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0
Room
-
0.9
-
RL = 50 , CL = 5 pF, f = 1 MHz
Room
-
-78
-
Room
-
-77
-
VIN = 0 V or V+
Dynamic Characteristics
Turn-on time d
tON
Turn-off time d
tOFF
Break-before-make time d
Charge injection
d
tBBM
QINJ
Off-isolation d
OIRR
Crosstalk d
XTALK
NO, NC off capacitance d
Channel-on capacitance d
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
CNO(off)
CNC(off)
VIN = 0 V or V+, f = 1 MHz
CON
Room
-
7
-
Room
-
7
-
Room
-
14
-
Full
-
0.002
1
ns
pC
dB
pF
Power Supply
Power supply current d
S18-0419-Rev. C, 23-Apr-18
I+
VIN = 0 V or V+
μA
Document Number: 76294
3
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (V+ = 2.5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 2.5 V, ± 10 %
VIN = 0.4 V or 2 V e
LIMITS
-40 °C to +85 °C
TEMP. a
MIN. b
UNIT
TYP. c MAX. b
Analog Switch
Analog signal range d
VNO, VNC
VCOM
Drain-source on-resistance d
RDS(on)
V+ = 2.2 V, VCOM = 1 V, INO, INC = 10 mA
RDS(on) flatness d
RDS(on)
flatness
V+ = 2.5 V, VCOM = 0 V to V+, INO, INC = 10 mA
RDS(on) match d
RDS(on)
V+ = 2.2 V, VCOM = 1.2 V, INO, INC = 10 mA
Switch-off leakage current f
INO(off),
INC(off)
ICOM(off)
Channel-on leakage current f
ICOM(on)
V+ = 2.7 V,
VNO, VNC = 0.5 V / 1.5 V, VCOM = 1.5 V / 0.5 V
V+ = 2.7 V,
VNO, VNC = VCOM = 0.5 V / 1.5 V
Full
0
-
V+
Room
-
23
27
Full d
-
24
28
Room
-
1.7
-
V
Room
-
0.1
0.5
Room
-200
-
200
Full d
-3
-
3
nA
Room
-200
-
200
pA
pA
Full d
-3
-
3
nA
Room
-200
-
200
pA
Full d
-3
-
3
nA
Digital Control
Input high voltage
VINH
Full
2
-
-
Input low voltage
VINL
Full
-
-
0.4
Input capacitance d
Input current
CIN
IINL or IINH
VIN = 0 V or V+
V
Full
-
6
-
pF
Full
-1
-
1
μA
Room
-
16
36
Dynamic Characteristics
Turn-on time d
tON
Turn-off time d
tOFF
Break-before-make time d
tBBM
Charge injection d
QINJ
Off-isolation d
OIRR
Crosstalk d
XTALK
NO, NC off capacitance d
Channel-on capacitance d
d
-
-
38
Room
-
10
19
Full
-
-
21
Room d
1
-
-
CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0
Room
-
0.9
-
RL = 50 , CL = 5 pF, f = 1 MHz
Room
-
-78
-
Room
-
-77
-
Room
-
7
-
Room
-
7
-
Room
-
14
-
Full
-
-
1
Full
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
CNO(off)
CNC(off)
VIN = 0 V or V+, f = 1 MHz
CON
ns
pC
dB
pF
Power Supply
Power supply current d
S18-0419-Rev. C, 23-Apr-18
I+
VIN = 0 V or V+
μA
Document Number: 76294
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (V+ = 2 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 2 V, ± 10 %
VIN = 0.4 V or 1.6 V e
LIMITS
-40 °C to +85 °C
TEMP. a
UNIT
MIN. b
TYP. c
MAX. b
Full
0
-
V+
Room
-
37
42
Full d
-
36
44
Room
-
3
-
Analog Switch
Analog signal range d
VNO, VNC
VCOM
Drain-source on-resistance d
RDS(on)
V+ = 1.8 V, VCOM = 1 V, INO, INC = 10 mA
RDS(on) flatness d
RDS(on)
flatness
V+ = 2 V, VCOM = 0 V to V+, INO, INC = 10 mA
RDS(on) match d
RDS(on)
V+ = 1.8 V, VCOM = 1 V, INO, INC = 10 mA
Switch-off leakage current f
INO(off),
INC(off)
ICOM(off)
Channel-on leakage current f
ICOM(on)
V+ = 2.2 V,
VNO, VNC = 0.5 V / 1.5 V, VCOM = 1.5 V / 0.5 V
V+ = 2.2 V,
VNO, VNC = VCOM = 0.5 V / 1.5 V
V
Room
-
0.04
0.5
Room
-200
-
200
Full d
-3
-
3
nA
Room
-200
-
200
pA
pA
Full d
-3
-
3
nA
Room
-200
-
200
pA
Full d
-3
-
3
nA
Digital Control
Input high voltage
VINH
Full
1.6
-
-
Input low voltage
VINL
Full
-
-
0.4
Input capacitance d
Input current
CIN
IINL or IINH
VIN = 0 V or V+
V
Full
-
6
-
pF
Full
-1
-
1
μA
Room
-
21
40
Dynamic Characteristics
Turn-on time d
tON
Turn-off time d
tOFF
Break-before-make time d
tBBM
Charge injection d
QINJ
Off-isolation d
OIRR
Crosstalk d
XTALK
NO, NC off capacitance d
Channel-on capacitance d
-
-
42
Room
-
13
20
Full d
-
-
21
Full
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
Room
1
-
-
CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0
Room
-
0.8
-
RL = 50 , CL = 5 pF, f = 1 MHz
Room
-
-78
-
Room
-
-77
-
Room
-
7
-
Room
-
7
-
Room
-
14
-
Full
-
-
1
CNO(off)
CNC(off)
d
VIN = 0 V or V+, f = 1 MHz
CON
ns
pC
dB
pF
Power Supply
Power supply current d
I+
VIN = 0 V or V+
μA
Notes
a. Room = 25 °C, full = as determined by the operating suffix
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
c. Typical values are for design aid only, not guaranteed nor subject to production testing
d. Guarantee by design, nor subjected to production test
e. VIN = input voltage to perform proper function
f. Guaranteed by 5 V leakage testing, not production tested
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
5
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
50
V+ = +1.8 V
35
1000
V+ = +2.7 V
1st line
2nd line
30
25
V+ = +3.0 V
100
V+ = +3.3 V
15
V+ = +4.5 V
10
5
20
1000
18
16
14
-40 °C
V+ = +5.5 V
0
1
2
3
4
10
V+ = +2.2 V
IS = 10 mA
6
10
5
10
0
0.5
1
1.5
2.5
VCOM - Analog Voltage (V)
2nd line
RDS(on) vs. VCOM and Supply Voltage
RDS(on) vs. Analog Voltage and Temperature
Axis Title
Axis Title
10000
10000
+85 °C
46
1000
6
100
4
-40 °C
V+ = +4.5 V
IS = 10 mA
36
1000
+25 °C
31
26
21
100
-40 °C
16
V+ = +1.8 V
IS = 10 mA
11
2
6
10
0
41
1
2
3
4
1st line
2nd line
+25 °C
8
2nd line
RON - On-Resistance (Ω)
+85 °C
10
1st line
2nd line
10
0
5
0.5
1
1.5
2
VCOM - Analog Voltage (V)
2nd line
VCOM - Analog Voltage (V)
2nd line
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Analog Voltage and Temperature
Axis Title
Axis Title
18
500
10000
+85 °C
+25 °C
16
1000
1st line
2nd line
14
12
10
100
-40 °C
2nd line
Leakage Current (pA)
0
8
1000
ICOM(ON), VCOM = 4.5 V
-1000
100
INC/NO(OFF), VCOM = 4.5 V, VNC/NO = 1 V
-1500
ICOM(OFF), VCOM = 1 V, VNC/NO = 4.5 V
V+ = +5.5 V
6
10
0.5
ICOM(OFF), VCOM = 4.5 V, VNC/NO = 1 V
-500
V+ = +2.7 V
IS = 10 mA
0
10000
INC/NO(OFF), VCOM = 1 V, VNC/NO = 4.5 V
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
2
VCOM - Analog Voltage (V)
2nd line
12
2nd line
RON - On-Resistance (Ω)
100
12
8
IS = -10 mA
0
+25 °C
22
1st line
2nd line
40
20
10000
+85 °C
24
2nd line
RON - On-Resistance (Ω)
45
2nd line
RON - On-Resistance (Ω)
26
10000
1
1.5
2
2.5
3
ICOM(ON), VCOM = 1 V
-2000
-40
-20
0
20
40
10
60
80
VCOM - Analog Voltage (V)
2nd line
Temperature (°C)
2nd line
RDS(on) vs. Analog Voltage and Temperature
Leakage Current vs. Temperature
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10000
INC/NO(OFF), VCOM = 1 V, VNC/NO = 3 V
1000
0
-50
-100
-150
ICOM(ON), VCOM = 3 V
INC/NO(OFF), VCOM = 3 V, VNC/NO = 1 V
100
ICOM(OFF), VCOM = 1 V, VNC/NO = 3 V
V+ = +3.3 V
ICOM(ON), VCOM = 1 V
-200
-40
-20
0
20
40
2nd line
Loss, OIRR, XTALK (dB)
ICOM(OFF), VCOM = 3 V, VNC/NO = 1 V
1st line
2nd line
2nd line
Leakage Current (pA)
50
10
60
80
Axis Title
10
Loss
0
-10
-20
-30
-40
XTALK
-50
-60
-70
-80
-90
-100
V+ = +5 V
-110
100K
1M
10M
100
10
100M
1G
Leakage Current vs. Temperature
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Axis Title
1000
10000
V+ = +5.5 V
VIN = V+ or GND
10000
V+ = +5 V
1000
1.2
1
0.8
100
0.6
0.4
10
1000
1
1st line
2nd line
1.4
2nd line
I+ - Supply Current (μA)
100
1.6
1st line
2nd line
2nd line
I+ - Supply Current (nA)
OIRR
Frequency (Hz)
2nd line
Axis Title
0.1
0.01
100
0.001
0.0001
0.2
0
10
-40
-20
0
20
40
60
80
0.00001
10
100
100
1000
100K
10
10M
1M
Input Switching Frequency (Hz)
2nd line
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
Axis Title
Axis Title
20
1st line
2nd line
1000
50.0
100
40.0
V+ = +5 V
VIN = 1.8 V
16
V+ = +5 V, tON
V+ = +3 V, tON
14
1000
12
10
8
V+ = +5 V, tOFF
6
100
V+ = +3 V, tOFF
4
2
30.0
10
-20
10000
18
1st line
2nd line
60.0
2nd line
tON, tOFF - Switching Time (ns)
10000
-40
10K
Temperature (°C)
2nd line
70.0
2nd line
I+ - Supply Current (μA)
1000
Temperature (°C)
2nd line
2
1.8
10000
1st line
2nd line
Axis Title
100
0
20
40
60
80
100
0
10
-50
-30
-10
10
30
50
70
90
Temperature (°C)
2nd line
Temperature (°C)
2nd line
Supply Current vs. Temperature
Switching Time vs. Temperature
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
7
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1000
10000
100
V+ = +2.5 V, tOFF
V+ = +2.0 V, tOFF
V+ = 5 V
10
1000
1
V+ = 3.0 V
0.1
0.01
V+ = 2.5 V
0.001
100
0.0001
0.00001
-30
-10
10
30
50
70
V+ = 2 V
0.000001
10
-50
90
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Temperature (°C)
2nd line
VIN (V)
2nd line
Switching Time vs. Temperature
Supply Current vs. Enable Input Voltage
Axis Title
10000
-40 °C to +85 °C
VINL
100
-5.0
1000
-10.0
1st line
2nd line
1000
2nd line
QINJ - Charge Injection (pC)
0
VINH
V+ = 2 V
100
V+ = 2.5 V
-15.0
V+ = 3 V
V+ = 5 V
-20.0
10
1.5
2.5
3.5
4.5
5.5
10
0
1
2
3
4
5
V+ - Supply Voltage (V)
2nd line
VNC/NO - Analog Voltage (V)
2nd line
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
8
ICOM(PD) Power Down Leakage Current (nA)
ICOM(PD) Power Down Leakage Current (nA)
Axis Title
10000
1st line
2nd line
2nd line
VIN - Switching Threshold (V)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1st line
2nd line
1000
V+ = +2.5 V, tON
2nd line
I+ - Supply Current (μA)
100
V+ = +2.0 V, tON
1st line
2nd line
2nd line
tON, tOFF - Switching Time (ns)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
V+ = VIN = GND
7
6
5
4
85 ºC
3
2
-40 ºC
1
25 ºC
0
0
2
4
6
2.5
V+ = VIN = GND
VCOM=+3 V
2
1.5
1
0.5
0
-40
-20
0
20
40
60
80
100
VCOM (V)
Temperature (°C)
2nd line
Power Down Leakage Current vs VCOM
Power Down Leakage Current vs Temperature
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
8
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
V+
3V
Logic
Input
tf < 20 ns
V+
NO or NC
Switch
tr < 20 ns
50 %
0V
Switch Output
COM
V OUT
0.9 x V OUT
Switch
Output
IN
Logic
Input
RL
300
GND
CL
35 pF
0V
tOFF
tON
Logic “1” = switch on
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
RL
V OUT = V COM
R L + R ON
Fig. 1 - Switching Time
V+
Logic
Input
V+
VNO
VNC
0V
COM
NO
tr < 5 ns
tf < 5 ns
3V
VO
NC
RL
300 Ω
IN
CL
35 pF
GND
VNC = V NO
VO
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Fig. 2 - Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
NC or NO
COM
VOUT
VOUT
+
IN
Vgen
CL = 1 nF
3V
IN
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Fig. 3 - Charge Injection
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
9
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9411E
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
COM
IN
COM
0 V, 2.4 V
NC or NO
V NC/NO
Off Isolation = 20 log
RL
GND
VCOM
Analyzer
Fig. 4 - Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Fig. 5 - Channel Off / On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76294.
S18-0419-Rev. C, 23-Apr-18
Document Number: 76294
10
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000