DG9421, DG9422
www.vishay.com
Vishay Siliconix
Precision Low-Voltage, Low-Glitch CMOS Analog Switches
DESCRIPTION
FEATURES
Using BiCMOS wafer fabrication technology allows the
DG9421, DG9422 to operate on single and dual supplies.
• 2.7 V thru 12 V single supply or ± 2.7 V
thru ± 6 V dual supply
Available
• Low on-resistance - RDS(on): 2 Ω at 12 V
• Fast switching - tON: 22 ns
Available
- tOFF: 28 ns
• TTL and low voltage logic
• Low leakage: 10 pA (typ.)
• > 2000 V ESD protection
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Designed for optimal performance at single 5 V and
dual ± 5 V, the DG9421, DG9422 combine low and flat
on-resistance (3 Ω), fast speed (tON = 38 ns) and is well
suited for applications where signal switching accuracy, low
noise and low distortion is critical.
The DG9421 and DG9422 respond to opposite control logic
as shown in the Truth Table.
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
BENEFITS
•
•
•
•
•
•
High accuracy
High speed, low glitch
Single and dual supply capability
Low RON in small TSOP package
Low leakage
Low power consumption
APPLICATIONS
•
•
•
•
•
•
Automatic test equipment
Data acquisition
XDSL and DSLAM
PBX systems
Reed relay replacement
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
V+
1
6
IN
COM
2
5
NC
3
4
GND
V-
Top View
TRUTH TABLE
LOGIC
DG9421
DG9422
0
ON
OFF
1
OFF
ON
Notes
• Logic “0” ≤ 0.8 V
• Logic “1” ≥ 2.4 V
• Switches shown for logic “0” input
Device Marking:
DG9421DV = 4Exxx
TSOP-6
V+
1
6
IN
COM
2
5
NO
V-
3
4
GND
ORDERING INFORMATION
TEMP. RANGE
-40 °C to +85 °C
Top View
Device Marking:
PACKAGE
6 / Pin TSOP
PART NUMBER
DG9421DV-T1
DG9421DV-T1-E3
DG9422DV-T1
DG9422DV-T1-E3
DG9422DV = 4Fxxx
S14-2339-Rev. H, 08-Dec-14
Document Number: 70679
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
V+ to V-
UNIT
-0.3 to +13
GND to V-
V
7
-0.3 to (V+ + 0.3)
or 50 mA, whichever occurs first
VIN a, VS, VD
Continuous Current (any terminal)
50
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle)
100
Storage Temperature
Power Dissipation (Packages) b
V/mA
mA
-65 to +150
°C
570
mW
6-Pin TSOP c
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 25 °C.
SPECIFICATIONS
a
PARAMETER
(Single Supply 12 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 V f
LIMITS
-40 °C to +85°C
TEMP. b
MIN. d
UNIT
TYP. c
MAX. d
Analog Switch
Analog Signal Range a
Drain-Source
On-Resistance
Switch Off
Leakage Current
VANALOG
RDS(on)
V+ = 10.8 V, V- = 0 V, IS = 5 mA, VD = 2 V/9 V
IS(off)
VD = 1/11 V, VS = 11 V/1 V
ID(off)
Channel-On
Leakage Current
Full
0
-
12
Room
-
2
3
Full
-
2
3.4
Room
-1
-
1
Full
-10
-
10
Room
-1
-
1
Full
-10
-
10
Room
-1
-
1
Full
-10
-
10
V
Ω
nA
ID(on)
VS = VD = 11 V/1 V
Input Current, VIN Low
IIL
VIN under test = 0.8 V
Full
-1
0.02
1
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
-1
0.02
1
Room
-
20
45
RL = 300 Ω, CL = 35 pF, VS = 5 V
see figure 2
Full
-
-
49
Room
-
25
47
Full
-
-
59
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
-
43
-
pC
Off-Isolation e
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
-
-60
-
dB
Source Off Capacitance e
CS(off)
Room
-
31
-
Drain Off Capacitance e
CD(off)
Room
-
30
-
Channel On Capacitance e
CD(on)
Room
-
71
-
Room
-
0.020
1
5
Digital Control
μA
Dynamic Characteristics
Turn-On Time e
tON
e
tOFF
Turn-Off Time
Charge Injection e
f = 1 MHz
ns
pF
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
S14-2339-Rev. H, 08-Dec-14
I+
IIGND
VIN = 0 V or 12 V
Full
-
-
Room
-1
-0.002
-
Full
-5
-
-
Room
-1
-0.002
-
Full
-5
-
-
μA
Document Number: 70679
2
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(Dual Supply ± 5 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = -5 V, VIN = 2.4 V, 0.8 V f
LIMITS
-40 °C to +85 °C
TEMP. b
MIN. d
TYP. c
UNIT
MAX. d
Analog Switch
Analog Signal Range e
VANALOG
Drain-Source
On-Resistance
RDS(on)
IS(off)
Switch Off
Leakage Current g
ID(off)
Channel-On
Leakage Current g
ID(on)
V+ = 5 V, V- = 5 V
IS = 5 mA, VD = ± 3.5 V
V+ = 5.5 V, V- = 5.5 V
− 4.5 V
VD = ± 4.5 V, VS = +
Full
-5
-
5
Room
-
2.2
3.2
Full
-
-
3.6
Room
-1
-
1
Full
-10
-
10
Room
-1
-
1
Full
-10
-
10
V+ = 5.5 V, V- = -5.5 V
VS = VD = ± 4.5 V
Room
-1
-
1
Full
-10
-
10
V
Ω
nA
Digital Control
Input Current, VIN Low e
IIL
VIN under test = 0.8 V
Full
-1
0.02
1
Input Current, VIN High e
IIH
VIN under test = 2.4 V
Full
-1
0.02
1
Room
μA
Dynamic Characteristics
-
38
63
RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V
see figure 2
Full
-
-
68
Room
-
45
83
Full
-
-
97
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
-
207
-
pC
Off-Isolation e
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
-
-57
-
dB
Source Off Capacitance e
CS(off)
Room
-
32
-
Room
-
31
-
Room
-
71
-
Room
-
0.030
1
Full
-
-
5
Room
-1
-0.002
-
Full
-5
-
-
Room
-1
-0.002
-
Full
-5
-
-
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection e
Drain Off Capacitance e
Channel On Capacitance
CD(off)
e
f = 1 MHz
CD(on)
ns
pF
Power Supplies
Positive Supply Current e
Negative Supply Current e
Ground Current e
S14-2339-Rev. H, 08-Dec-14
I+
IIGND
VIN = 0 V or 5 V
μA
Document Number: 70679
3
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(Single Supply 5 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = 0 V, VIN = 2.4 V, 0.8 V f
LIMITS
-40 °C to +85 °C
TEMP. b
MIN. d
TYP. c
UNIT
MAX. d
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
VANALOG
RDS(on)
Full
0
-
5
Room
-
3.6
6
Full
-
-
6.6
Room
-
43
67
RL = 300 Ω, CL = 35 pF, VS = 3.5 V,
see figure 2
Hot
-
-
74
Room
-
30
67
Hot
-
-
80
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
-
25
-
Room
-
0.020
1
Hot
-
-
5
Room
-1
-0.002
-
Hot
-5
-
-
Room
-1
-0.002
-
Hot
-5
-
-
V+ = 4.5 V, IS = 5 mA,
VD = 1 V, 3.5 V
V
Ω
Dynamic Characteristics
Turn-On Time e
Turn-Off Time e
Charge Injection e
tON
tOFF
Q
ns
pC
Power Supplies
Positive Supply Current e
Negative Supply Current e
Ground Current e
S14-2339-Rev. H, 08-Dec-14
I+
IIGND
VIN = 0 V or 5 V
μA
Document Number: 70679
4
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
SPECIFICATIONS
a
PARAMETER
Vishay Siliconix
(Single Supply 3 V)
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V- = 0 V, VIN = 0.4 V f
LIMITS
-40 °C to +85 °C
TEMP. b
MIN. d
TYP. c
UNIT
MAX. d
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
Switch Off
Leakage Current g
VANALOG
RDS(on)
IS(off)
ID(off)
Channel-On
Leakage Current g
ID(on)
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5 V, 2.2 V
V+ = 3.3 V, V- = 0 V
VS = 1, 2 V, VD = 2 V, 1 V
Full
0
-
3
Room
-
7.3
8.8
Full
-
-
10.1
Room
-1
-
1
Full
-10
-
10
Room
-1
-
1
Full
-10
-
10
V+ = 3.3 V, V- = 0 V
VD = VS = 1 V, 2 V
Room
-1
-
1
Full
-10
-
10
V
Ω
nA
Digital Control
Input Current, VIN Low e
IIL
VIN under test = 0.4 V
Full
-1
0.02
1
Input Current, VIN High e
IIH
VIN under test = 2.4 V
Full
-1
0.02
1
μA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Room
90
110
RL = 300 Ω, CL = 35 pF, VS = 1.5 V
see figure 2
Room
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
31
pC
Off-Isolation e
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
-60
dB
Source Off Capacitance e
CS(off)
Room
35
Drain Off Capacitance e
CD(off)
Room
34
Channel On Capacitance e
CD(on)
Room
77
Charge Injection e
Full
125
32
Full
f = 1 MHz
84
ns
99
pF
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2339-Rev. H, 08-Dec-14
Document Number: 70679
5
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
IS = 5 mA
V+ = 3.0 V
8
R ON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
T = 25 °C
IS = 5 mA
V+ = 3.0 V
6
V+ = 5.0 V
4
V+ = 10.8 V
8
A
B
6
A
C
B
4
C
2
2
A = 85 °C
B = 25 °C
C = - 40 °C
V+ = 12 V
0
0
0
2
4
6
8
10
0
12
RON vs. VCOM and Supply Voltage
RON vs. Analog Voltage and Temperature
1000
8
V± = ± 5 V
IS = 5 mA
V+ = ± 5 V
VIN = 0 V
I+ - Supply Current (pA)
RON - On-Resistance (Ω)
5
4
2
3
VCOM - Analog Voltage (V)
1
VCOM - Analog Voltage (V)
6
4
A
100
B
2
A = 85 °C
B = 25 °C
C = - 40 °C
C
0
-5
-3
-1
1
3
10
- 60
5
- 40
- 20
0
20
40
60
80
Drain Voltage (V)
Temperature (°C)
RON vs. Analog Voltage and Temperature
Supply Current vs. Temperature
10 m
100
100
V+ = 5 V
V- = 0 V
Leakage Current (pA)
1m
I+ - Supply Current (A)
V+ = 5.0 V
100 µ
10 µ
1µ
10
I(on)
I(off)
100 n
10 n
1
10
100
1K
10K
100K
1M
10M
- 60
- 40
- 20
0
20
40
60
80
Input Switching Frequences (Hz)
Temperature (°C)
Supply Current vs. Input Switching Frequency
Leakage Current vs. Temperature
S14-2339-Rev. H, 08-Dec-14
100
Document Number: 70679
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG9421, DG9422
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
V+ = 5 V
V- = 0 V
V+ = ± 5 V
Leakage Current (pA)
Leakage Current (pA)
60
10
I(on)
1
I(off)
INO(off)/INC(off)
20
ICOM(off)
- 20
ICOM(on)
- 60
0.1
- 60
- 100
- 40
- 20
0
20
40
60
80
0
100
1
Leakage Current vs. Temperature
3
4
5
Leakage vs. Analog Voltage
400
120
t ON , t OFF - Switching Time (ns)
V+ = 12 V
V- = 0 V
300
Leakage Current (pA)
2
VCOM, V NO, V NC - Analog Voltage (V)
Temperature (°C)
200
100
ICOM(on)
0
- 100
INO(off)/INC(off)
- 200
- 300
100
tON V+ = 3 V
80
60
tON V+ = 5 V
tOFF V+ = 5 V
40
20
ICOM(off)
2
tOFF V+ = 12 V
tON V+ = 12 V
0
- 60
- 400
0
tOFF V+ = 3 V
4
6
8
10
12
- 40
VCOM, V NO, V NC - Analog Voltage (V)
- 20
0
20
40
60
80
100
Temperature (°C)
Leakage vs. Analog Voltage
Switching Time vs. Temperature and Supply Voltage (DG9421)
2.5
10
Loss
0
V T - Switching Threshold (V)
V+ = 3 V
RL = 50
- 10
Loss, OIRR (dB)
- 20
- 30
- 40
OIRR
- 50
- 60
- 70
2.0
1.5
1.0
0.5
- 80
- 90
100K
0.0
1M
10M
Frequency (MHz)
100M
Insertion Loss, Off Isolation vs. Frequency
S14-2339-Rev. H, 08-Dec-14
1G
0
2
4
6
8
10
V+ - Supply Voltage (V)
12
14
Switching Threshold vs. Supply Voltage
Document Number: 70679
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300
250
200
200
150
150
Q - Charge Injection (pC)
Q - Charge Injection (pC)
300
V+ = 12 V
250
100
50
0
V+ = 5 V
V+ = 3 V
- 50
- 100
- 150
100
0
- 50
- 100
- 150
- 200
- 200
- 250
- 250
- 300
0
2
4
6
8
VCOM - Analog Voltage (V)
10
V=±5V
50
- 300
-6
12
-4
-2
0
2
4
6
VCOM - Analog Voltage (V)
Charge Injection vs. Analog Voltage
Charge Injection vs. Analog Voltage
SCHEMATIC DIAGRAM (Typical Channel)
V+
NC/NO
VLevel
Shift/
Drive
VIN
V+
GND
COM
V-
Fig. 1
TEST CIRCUITS
V+
Logic
Input
VS
D
tOFF
VO
Switch
Input*
IN
GND
RL
300 Ω
V-
VSwitch
Input*
CL (includes fixture and stray capacitance)
RL
RL + rDS(on)
VS
VO
CL
35 pF
Switch
Output
VO = V S
tr < 5 ns
tf < 5 ns
50 %
0V
V+
S
VNC/NO
90 %
0V
tON
VO
- VS
90 %
Note: * Logic input waveform is inverted for switches that
have the opposite logic sense control
Fig. 2 - Switching Time
S14-2339-Rev. H, 08-Dec-14
Document Number: 70679
8
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DG9421, DG9422
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Vishay Siliconix
TEST CIRCUITS
ΔV O
V+
VO
V+
Rg
S
INX
D
IN
Vg
OFF
VO
ON
OFF
CL
10 nF
3V
V-
GND
INX
V-
OFF
ON
Q = ΔVO x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
Fig. 3 - Charge Injection
V+
C
V+
D1
S1
VS
Rg = 50 Ω
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V , 2.4 V
RL
IN2
GND
XTALK Isolation = 20 log
V-
C
VS
VO
V-
C = RF bypass
Fig. 4 - Crosstalk
V+
V+
C
C
V+
S
VS
VO
D
V+
S
Rg = 50 Ω
0 V, 2.4 V
RL
50 Ω
IN
GND
V-
C
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
VOff Isolation = 20 log
V-
C
VS
VO
V-
C = RF Bypass
Fig. 5 - Off Isolation
Fig. 6 - ource/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70679.
S14-2339-Rev. H, 08-Dec-14
Document Number: 70679
9
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
INCHES
7 Nom
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1
AN823
Vishay Siliconix
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see http://www.vishay.com/doc?71200 and see
http://www.vishay.com/doc?72610 for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
0.167
4.25
0.074
1.875
0.014
0.35
0.122
3.1
0.026
0.65
0.049
1.25
0.049
1.25
0.010
0.25
FIGURE 1. Recommended Copper Spreading Footprint
Document Number: 71743
27-Feb-04
Ramp-Up Rate
+6_C/Second Maximum
Temperature @ 155 " 15_C
120 Seconds Maximum
Temperature Above 180_C
70 − 180 Seconds
Maximum Temperature
240 +5/−0_C
Time at Maximum Temperature
20 − 40 Seconds
Ramp-Down Rate
+6_C/Second Maximum
FIGURE 2. Solder Reflow Temperature Profile
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1
AN823
Vishay Siliconix
10 s (max)
255 − 260_C
1X4_C/s (max)
3-6_C/s (max)
217_C
140 − 170_C
60 s (max)
60-120 s (min)
Pre-Heating Zone
3_C/s (max)
Reflow Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
THERMAL PERFORMANCE
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
rDS(on) − On-Resiistance
(Normalized)
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
1.2
1.0
0.8
0.6
−50
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
FIGURE 4. Si3434DV
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
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2
Document Number: 71743
27-Feb-04
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
0.064
(1.626)
0.028
(0.699)
(3.023)
0.119
(2.510)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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26
Document Number: 72610
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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