DG9461DY-E3

DG9461 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9461 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 40 Ω) and small physical size (TSOP-6), the DG9461 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. • • • • • • • • • The DG9461 is built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9461. Low Voltage Operation (+ 2.7 to + 5 V) Low On-Resistance - rDS(on): 40 Ω Fast Switching - tON: 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200 pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) Available in TSOP-6 and SOIC-8 Pb-free Available RoHS* COMPLIANT BENEFITS Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. • • • • Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space (TSOP-6) APPLICATIONS • • • • • • • Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TSOP-6 IN 1 6 NO V+ 2 5 COM GND 3 4 NC TRUTH TABLE Logic NC NO 0 ON OFF 1 OFF ON Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V Top View ORDERING INFORMATION SOIC-8 NO 1 8 V+ COM 2 7 IN NC 3 6 * GND 4 5 * Temp Range Package TSOP-6 - 40 to 85 °C SOIC-8 Part Number DG9461DV-T1 DG9461DV-T1-E3 DG9461DY-T1 DG9461DY-T1-E3 Top View *Not Connected * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70832 S-71009–Rev. C, 14-May-07 www.vishay.com 1 DG9461 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit - 0.3 to + 13 Reference V+ to GND IN, COM, NC, NOa Continuous Current (Any terminal) Unit V - 0.3 V to (V+ + 0.3 V) ± 20 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ESD (Method 3015.7) Storage Temperature (D Suffix) Power Dissipation (Packages)b mA ± 40 > 2000 V - 65 to 125 °C 400 mW 8-Pin Narrow Body SOICc Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/°C above 75 °C. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ±10 %, VIN = 0.4 or 2.4 Ve D Suffix - 40 to 85 °C Tempa Minc Full 0 Typb Maxc Unit 3 V Analog Switch Analog Signal Ranged VANALOG rDS(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA Room Full 50 80 140 rDS(on)Matchd ΔrDS(on) VNO or VNC = 1.5 V Room 0.4 2 rDS(on) Flatnessf rDS(on) Flatness VNO or VNC = 1 and 2 V Room 4 8 INO/NC(off) VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V Room Full - 100 - 5000 5 100 5000 COM Off Leakage Currentg ICOM(off) VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V Room Full - 100 - 5000 5 100 5000 Channel-On Leakage Currentg ICOM(on) VCOM = VNO or VNC = 1 V/2 V Room Full - 200 - 10000 10 200 10000 Drain-Source On-Resistance NO or NC Off Leakage Currentg Ω pA Digital Control IINL or IINH Full 1 Turn-On Time tON Room Full 50 120 200 Turn-Off Time tOFF VNO or VNC = 1.5 V Room Full 20 50 120 ns 5 pC Input Current µA Dynamic Characteristics Break-Before-Make Time td Room 3 20 Charge Injection QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω Room 1 Off-Isolation OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 74 Source Off Capacitance CS(off) Channel-On Capacitance CD(on) f = 1 MHz Room 7 Room 32 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ www.vishay.com 2 2.7 V+ = 3.3 V, VIN = 0 or 3.3 V 12 V 1 µA Document Number: 70832 S-71009–Rev. C, 14-May-07 DG9461 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 Ve D Suffix - 40 to 85 °C Tempa Minc Full 0 Typb Maxc Unit 5 V Analog Switch Analog Signal Ranged VANALOG rDS(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA Room Full 30 60 75 rDS(on)Matchd ΔrDS(on) VNO or VNC = 1.5 V Room 0.4 2 rDS(on) Flatnessf rDS(on) Flatness VNO or VNC = 1,2 and 3 V Room 2 6 NO or NC Off Leakage Current INO/NC(off) VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V Room Full - 100 - 5000 10 100 5000 COM Off Leakage Current ICOM(off) VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V Room Full - 100 - 5000 10 100 5000 Channel-On Leakage Current ICOM(on) VCOM = VNO or VNC = 1 V/4 V Room Full - 200 - 10000 Drain-Source On-Resistance Ω pA 200 10000 Digital Control IINL or IINH Full 1 Turn-On Time tON Room Full 35 75 150 Turn-Off Time tOFF Room Full 20 50 100 ns 5 pC Input Current µA Dynamic Characteristics Break-Before-Make Time VNO or VNC = 3.0 V td Room 3 10 Charge Injection QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω Room 2 Off-Isolation OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 74 NC and NO Capacitance C(off) Room -7 Channel-On Capacitance CD(on) Room 32 f = 1 MHz dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 2.7 V+ = 5.5 V, VIN = 0 or 5.5 V 12 V 1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guraranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70832 S-71009–Rev. C, 14-May-07 www.vishay.com 3 DG9461 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3000 2.0 V+ = 3 V 1.5 2500 1.0 2000 I SUPPLY (μA) Q INJ (pC) 0.5 0.0 - 0.5 1500 V+ = 5 V 1000 500 - 1.0 0 - 1.5 V+ = 3 V - 500 -2 0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 - 40 1 nA - 60 OFF-Isolation (dB) I COM(off) (A) 5 Supply Current vs. VIN 10 nA 100 pA ICOM(off) ICOM(on) - 80 - 100 - 120 1 pA - 140 0.1 pA 25 4 VIN VCOM Charge Injection 10 pA 3 45 65 85 105 0.001 M 125 0.01 M Temperature (°C) 0.1 M 1M 10 M Frequency (Hz) Off-Isolation vs. Frequency Leakage Current vs. Temperature 80 2.5 2.0 V+ = 5 V 1.5 V+ = 3 V 60 ICOM 0.5 r DS(on) (Ω) I OFF (pA) 1.0 0.0 - 0.5 INO/NC 40 V+ = 5 V - 1.0 20 - 1.5 - 2.0 0 - 2.5 0 1 2 3 4 VCOM Off-Leakage vs. Voltage at 25 °C www.vishay.com 4 5 0 1 2 3 4 5 VCOM rDS vs. VCOM Document Number: 70832 S-71009–Rev. C, 14-May-07 DG9461 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 70 V+ = 3 V 60 85 °C 60 tON 25 °C t ON / t OFF (ns) r DS(on) (Ω) 50 40 °C 40 40 30 tOFF 20 20 10 0 0 0.5 1.0 1.5 2.0 2.5 0 - 60 3.0 - 30 0 VCOM 30 60 90 120 Temperature (°C) rDS vs. VCOM Switching Time vs. Temperature 120 2.25 100 2.00 1.75 V IN (sw) T (ns) 80 60 1.50 1.25 tON 40 1.00 tOFF 20 0 1.5 0.75 0.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ tON/tOFF vs. Power Supply Voltage Document Number: 70832 S-71009–Rev. C, 14-May-07 5.0 2 3 4 5 6 V+ Input Switching Point vs. Power Supply Voltage www.vishay.com 5 DG9461 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ Switch Input 0V Switch Output COM NO or NC tr < 20 ns tf < 20 ns 50 % VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL V OUT = V COM R L + R ON Figure 1. Switching Time V+ Logic Input V+ VNO VNC tr < 5 ns tf < 5 ns 0V COM NO 3V VO NC RL 300 Ω IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 70832 S-71009–Rev. C, 14-May-07 DG9461 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0 V, 2.4 V IN COM NC or NO Off Isolation = 20 log RL GND VNC/ NO VCOM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70832. Document Number: 70832 S-71009–Rev. C, 14-May-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1