DZ23C4V7-G3-08

DZ23-G Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common cathode 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %. 1 DESIGN SUPPORT TOOLS 2 • The parameters are valid for both diodes in one case. VZ and Rzj of the two diodes in one case is  5 % • AEC-Q101 qualified click logo to get started • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Models Available • Base P/N-G3 - green, commercial grade PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5 mA VZ specification Pulse current Circuit configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912   Dual common cathode ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY DZ23C2V7-G3-08 to DZ23C51-G3-08 3000 (8 mm tape on 7" reel) 10 000 DZ23C2V7-G3-18 to DZ23C51-G3-18 10 000 (8 mm tape on 13" reel) 15 000 DZ23-G-Series PACKAGE PACKAGE NAME SOT-23 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Thermal resistance,  junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C IZ Ptot/VZ mA Junction temperature Zener current Rev. 1.2, 13-Feb-18 Document Number: 85879 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors Rev. 1.2, 13-Feb-18 Document Number: 85879 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT1  10-4/°C V nA MIN. NOM. MAX. MAX. MAX. MIN. MAX. DZ23C2V7-G V41 2.5 2.7 2.9 5 1 MAX. - - 75 (< 83) < 500 -9 -4 DZ23C3V0-G V42 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 DZ23C3V3-G V43 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V6-G V44 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V9-G V45 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 DZ23C4V3-G V46 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 DZ23C4V7-G V47 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 DZ23C5V1-G V48 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 DZ23C5V6-G V49 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 6 DZ23C6V2-G V50 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 7 DZ23C6V8-G V51 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 2 7 DZ23C7V5-G V52 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 3 7 DZ23C8V2-G V53 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 4 7 DZ23C9V1-G V54 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 5 8 DZ23C10-G V55 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 DZ23C11-G V56 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 DZ23C12-G V57 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 6 9 DZ23C13-G V58 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 DZ23C15-G V59 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 DZ23C16-G V60 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 DZ23C18-G V61 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 DZ23C20-G V62 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 DZ23C22-G V63 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 DZ23C24-G V64 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 DZ23C27-G V65 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 DZ23C30-G V66 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 DZ23C33-G V67 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 DZ23C36-G V68 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 DZ23C39-G V69 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 DZ23C43-G V70 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 DZ23C47-G V71 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 DZ23C51-G V72 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.2, 13-Feb-18 Document Number: 85879 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 Ω 100 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 10-1 33 2 27 22 10 TJ = 25 °C 10-2 18 15 5 4 10-3 3 -4 2 12 10 10 6.8/8.2 6.2 1 10-5 0 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward Characteristics mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj Ptot 47 + 51 43 39 36 3 2 300 102 200 7 5 4 3 100 2 0 0 100 Tamb 18115 10 0.1 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 5.6 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current 10 5 4 3 negative 2 positive 1 1 18121 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.2, 13-Feb-18 Document Number: 85879 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 7 IZ = 5 mA 5 4 Rzj Δ VZ ΔTj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 4 5 10 2 3 4 5 18122 0 100 V 0 VZ 20 60 40 Fig. 7 - Dynamic Resistance vs. Zener Voltage 80 100 V VZ 18125 Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 V 9 20 7 8 Δ VZ ΔTj 5 mA IZ = 1 mA 20 mA 15 Δ VZ 51 6 5 43 4 10 36 3 5 2 1 0 0 1 2 3 4 5 10 2 3 4 5 0 100 V VZ 18123 25 0.7 VZ at IZ = 5 mA 0.6 8 0.4 7 0.3 0.2 6.2 5.9 0.1 5.6 0 1 0.8 0.6 0.4 0.2 0 5.1 -1 3.6 18124 40 60 80 140 °C 1.2 Δ VZ 20 80 100 120 Tj ΔVZ = Rzth x IZ 1.4 0.5 0 60 V 1.6 15 10 - 0.2 40 Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 20 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Δ VZ IZ = 2 mA -1 -5 4.7 100 120 140 C Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature - 0.2 - 0.4 18127 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage Rev. 1.2, 13-Feb-18 Document Number: 85879 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors mA 30 V 5 10 12 ΔVZ = Rzth x IZ Tj = 25 °C 4 lZ Δ VZ 3 15 20 18 IZ = 5 mA 22 2 27 Test 10 current IZ 5 mA 1 33 36 IZ = 2 mA 0 0 20 40 60 0 100 V 80 0 VZ 18128 Tj = 25 °C 30 mA 10 2.7 40 Tj = 25 °C 6.8 lZ 40 V VZ 3.9 5.6 3.3 4.7 8 8.2 lZ 30 6 20 4 Test current IZ 5 mA 10 20 Fig. 15 - Breakdown Characteristics Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage mA 50 10 18112 Test current IZ 5 mA 39 51 43 47 2 0 0 0 1 2 3 4 18111 5 6 7 8 9 10 V 0 VZ 10 20 30 40 50 60 70 80 90 100 V VZ 18113 Fig. 14 - Breakdown Characteristics Fig. 16 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.2, 13-Feb-18 Document Number: 85879 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-G Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23. Sep. 2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.2, 13-Feb-18 Document Number: 85879 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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