EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast
Surface-Mount Bridge Rectifiers
FEATURES
•
•
•
•
UL recognition, file number E54214
Ideal for automated placement
Glass passivated pellet chip junction
Ultrafast reverse recovery time for high
frequency
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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~
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TYPICAL APPLICATIONS
Case Style DFS
LINKS TO ADDITIONAL RESOURCES
3D 3D
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
3D Models
MECHANICAL DATA
Case: DFS
PRIMARY CHARACTERISTICS
IF(AV)
1A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
IR
5 μA
VF at IF = 1.0 A
1.05 V
Polarity: as marked on body
trr
50 ns
TJ max.
150 °C
Package
DFS
Circuit configuration
Quad
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Maximum RMS voltage
VRMS
35
70
106
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward output rectified current at TA = 40 °C (1)
IF(AV)
1.0
Peak forward surge current single half sine-wave superimposed on rated load
IFSM
50
A
I2t
10
A2s
TJ, TSTG
-55 to +150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
V
A
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Revision: 09-Jul-2020
Document Number: 88578
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
drop per diode
1.0 A (1)
Maximum DC reverse current at rated DC
blocking voltage per diode
TA = 25 °C
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS
VF
1.05
IR
TA = 125 °C
trr
UNIT
V
5.0
μA
1.0
mA
50
ns
Note
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT
Typical thermal resistance
(1)
RJA
38
RJL
12
°C/W
Note
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
EDF1DS-E3/45
0.406
45
50
DELIVERY MODE
Tube
EDF1DS-E3/77
0.406
77
1500
13" diameter paper tape and reel
Revision: 09-Jul-2020
Document Number: 88578
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
IPK/IAV = π Resistive
or Inductive Load
0.75
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0.5
Capacitive
Loads
5.0
Ipk
= 10
IAV
20
0.25
Instantaneous Reverse Leakage
Current (µA)
Average Forward Output Current (A)
1.0
0
TJ = 125 °C
10
1
TJ = 25 °C
0.1
20
60
40
100
80
120
140
160
0
20
40
80
60
100
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Derating Curves Output Rectified Current
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
60
30
TJ = 150 °C
Single Sine-Wave
50
Junction Capacitance (pF)
Peak Forward Surge Current (A)
100
40
30
20
10
1.0 Cycle
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
0.1
1
10
100
1000
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Revision: 09-Jul-2020
Document Number: 88578
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFS
Mounting Pad La yout
0.205 (5.2)
0.195 (5.0)
0.047 (1.20)
0.040 (1.02)
0.047 MIN.
(1.20 MIN.)
0.404 MAX.
(10.26 MAX.)
0.060 MIN.
(1.52 MIN.)
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
0.320 (8.13)
45°
0.255 (6.5)
0.245 (6.2)
0.130 (3.3)
0.120 (3.05)
0.205 (5.2)
0.195 (5.0)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Revision: 09-Jul-2020
Document Number: 88578
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024