EDF1CS-E3/77

EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Ultrafast Surface-Mount Bridge Rectifiers FEATURES • • • • UL recognition, file number E54214 Ideal for automated placement Glass passivated pellet chip junction Ultrafast reverse recovery time for high frequency • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~ ~ ~ ~ TYPICAL APPLICATIONS Case Style DFS LINKS TO ADDITIONAL RESOURCES 3D 3D General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. 3D Models MECHANICAL DATA Case: DFS PRIMARY CHARACTERISTICS IF(AV) 1A VRRM 50 V, 100 V, 150 V, 200 V IFSM 50 A Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test IR 5 μA VF at IF = 1.0 A 1.05 V Polarity: as marked on body trr 50 ns TJ max. 150 °C Package DFS Circuit configuration Quad     per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Maximum RMS voltage VRMS 35 70 106 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A I2t 10 A2s TJ, TSTG -55 to +150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range V A Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle Revision: 09-Jul-2020 Document Number: 88578 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode 1.0 A (1) Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS VF 1.05 IR TA = 125 °C trr UNIT V 5.0 μA 1.0 mA 50 ns Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT Typical thermal resistance (1) RJA 38 RJL 12 °C/W Note PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY EDF1DS-E3/45 0.406 45 50 DELIVERY MODE Tube EDF1DS-E3/77 0.406 77 1500 13" diameter paper tape and reel Revision: 09-Jul-2020 Document Number: 88578 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 IPK/IAV = π Resistive or Inductive Load 0.75 0.51 x 0.51" (13 x 13 mm) Copper Pads 0.5 Capacitive Loads 5.0 Ipk = 10 IAV 20 0.25 Instantaneous Reverse Leakage Current (µA) Average Forward Output Current (A) 1.0 0 TJ = 125 °C 10 1 TJ = 25 °C 0.1 20 60 40 100 80 120 140 160 0 20 40 80 60 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Derating Curves Output Rectified Current Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 60 30 TJ = 150 °C Single Sine-Wave 50 Junction Capacitance (pF) Peak Forward Surge Current (A) 100 40 30 20 10 1.0 Cycle 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 20 15 10 5 0 1 10 100 Number of Cycles at 60 Hz 0.1 1 10 100 1000 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 10 1 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Revision: 09-Jul-2020 Document Number: 88578 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS Mounting Pad La yout 0.205 (5.2) 0.195 (5.0) 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.404 MAX. (10.26 MAX.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45° 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.013 (0.330) 0.003 (0.076) Revision: 09-Jul-2020 Document Number: 88578 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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