Not for New Designs
EGF1A, EGF1B, EGF1C, EGF1D
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Vishay General Semiconductor
Surface-Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
Superectifier®
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
GF1 (DO-214BA)
• AEC-Q101 qualified
Cathode
Anode
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
3D Models
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
30 A
trr
50 ns
VF
1.0 V
TJ max.
175 °C
Package
GF1 (DO-214BA)
Circuit configuration
Single
MECHANICAL DATA
Case: GF1 (DO-214BA), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meet JESD 201 class 2 whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
EGF1A
EGF1B
EGF1C
EGF1D
EA
EB
EC
ED
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TL = 125 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
TJ, TSTG
-65 to +175
°C
Operating junction and storage temperature range
V
Revision: 24-Oct-2022
Document Number: 88579
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
1.0 A
VF
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
SYMBOL
TA = 125 °C
EGF1A
EGF1B
(1)
EGF1C
EGF1D
UNIT
1.0
V
5.0
IR (1)
μA
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGF1B
EGF1C
85
RθJL (1)
30
RθJA
Typical thermal resistance
EGF1A
(1)
EGF1D
UNIT
°C/W
Note
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EGF1DHE3_B/H (1)
0.104
H
1500
7" diameter plastic tape and reel
EGF1DHE3_B/I (1)
0.104
I
6500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
30
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
25
20
15
10
5
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 24-Oct-2022
Document Number: 88579
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
70
10
TJ = 150 °C
TJ = 25 °C
1
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.2
50
40
30
20
10
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
1000
Instantaneous Reverse Leakage
Current (µA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
60
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
100
TJ = 150 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
10
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GF1 (DO-214BA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 (1.52)
MIN.
0.118 (3.00)
0.108 (2.74)
0.100 (2.54)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.208 (5.28)
REF.
0.114 (2.90)
0.094 (2.39)
0.226 (5.74)
0.196 (4.98)
Revision: 24-Oct-2022
Document Number: 88579
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Document Number: 91000
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024
