EGF1T
www.vishay.com
Vishay General Semiconductor
Surface-Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
Superectifier®
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
GF1 (DO-214BA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
3D Models
For use in high voltage rectification of photoflash
application.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
1300 V
IFSM
20 A
trr
75 ns
EAS
15 mJ
VF at IF = 1.0 A
3.0 V
TJ max.
150 °C
Package
GF1 (DO-214BA)
Circuit configuration
Single
MECHANICAL DATA
Case: GF1 (DO-214BA), molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and HE3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
EGF1T
UNIT
ET
Maximum repetitive peak reverse voltage
VRRM
1300
V
Maximum RMS voltage
VRMS
910
V
Maximum DC blocking
VDC
1300
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
20
A
Non-repetitive avalanche energy at TA = 25 °C, IAS = 1 A, L = 30 mH
EAS
15
mJ
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 17-Aug-2021
Document Number: 88904
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EGF1T
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
1.0 A
SYMBOL
EGF1T
UNIT
VF (1)
3.0
V
TJ = 25 °C
TJ = 25 °C
5.0
IR (2)
Maximum DC reverse current
VRM
Typical reverse recovery time
IF = 0.5 A, IR =1.0 A,
Irr = 0.25 A
trr
75
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
8.0
pF
SYMBOL
EGF1T
UNIT
RθJA (1)
50
RθJL (1)
20
TJ = 125 °C
μA
50
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.95" x 0.95" (24 mm x 24 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.104
67A
1500
7" diameter plastic tape and reel
EGF1T-E3/5CA
0.104
5CA
6500
13" diameter plastic tape and reel
EGF1THE3_A/H (1)
0.104
H
1500
7" diameter plastic tape and reel
EGF1THE3_A/I (1)
0.104
I
6500
13" diameter plastic tape and reel
EGF1T-E3/67A
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Forward Surge Current (A)
Average Forward Current (A)
1.5
1.0
0.5
20
15
10
5
0
0
25
50
75
100
125
150
175
1
10
100
TL - Lead Temperature (°C)
Number of Cycles
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Forward Surge Current
Revision: 17-Aug-2021
Document Number: 88904
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EGF1T
www.vishay.com
Vishay General Semiconductor
100
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
1
0.01
0
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance Per Leg
100
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Leakage
Current (µA)
10
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
1
0.1
0.001
10
20
30
40
50
60
70
80
90
10
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GF1 (DO-214BA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 (1.52)
MIN.
0.118 (3.00)
0.108 (2.74)
0.100 (2.54)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.208 (5.28)
REF.
0.114 (2.90)
0.094 (2.39)
0.226 (5.74)
0.196 (4.98)
Revision: 17-Aug-2021
Document Number: 88904
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000
