Not for New Designs
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
SUPERECTIFIER®
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
DO-41 (DO-204AL)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V, 100 V, 150 V, 200 V, 300 V, 400 V
IFSM
30 A
trr
50 ns
VF
0.95 V, 1.25 V
MECHANICAL DATA
Case: DO-41 (DO-204AL), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
TJ max.
150 °C
Package
DO-41 (DO-204AL)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGP10A
EGP10B
EGP10C
EGP10D
EGP10F
EGP10G
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
TJ, TSTG
-65 to +150
°C
Operating junction and storage temperature range
Revision: 06-Oct-2021
Document Number: 88582
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
1.0 A
SYMBOL
EGP10A
EGP10B
VF
EGP10C
EGP10F
0.95
EGP10G
1.25
TA = 25 °C
Maximum DC reverse
current at rated DC
blocking voltage
EGP10D
UNIT
V
5.0
IR
TA = 125 °C
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction
capacitance
4.0 V, 1 MHz
CJ
μA
100
50
ns
22
15
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJA
EGP10A
EGP10B
EGP10C
(1)
EGP10D
EGP10F
EGP10G
50
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EGP10D-E3/54
0.337
54
5500
13" diameter paper tape and reel
EGP10D-E3/73
0.337
73
3000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
30
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
1.0
0.5
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
25
20
15
10
5
0
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 06-Oct-2021
Document Number: 88582
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
70
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 150 °C
10
1
TJ = 25 °C
0.1
40
30
20
EGP10A thru EGP10D
EGP10F and EGP10G
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
1000
Instantaneous Reverse Leakage
Current (μA)
50
10
EGP10A thru EGP10D
EGP10F and EGP10G
0.01
0.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
60
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
100
TJ = 150 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
20
40
60
80
1
0.1
0.01
0.01
0
10
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Revision: 06-Oct-2021
Document Number: 88582
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024