EGP10GHM3/54

Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER® • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability DO-41 (DO-204AL) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V, 300 V, 400 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V MECHANICAL DATA Case: DO-41 (DO-204AL), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade TJ max. 150 °C Package DO-41 (DO-204AL) Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -65 to +150 °C Operating junction and storage temperature range Revision: 06-Oct-2021 Document Number: 88582 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 TA = 25 °C Maximum DC reverse current at rated DC blocking voltage EGP10D UNIT V 5.0 IR TA = 125 °C Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ μA 100 50 ns 22 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RθJA EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGP10D-E3/54 0.337 54 5500 13" diameter paper tape and reel EGP10D-E3/73 0.337 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.5 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 06-Oct-2021 Document Number: 88582 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor 70 Pulse Width = 300 μs 1 % Duty Cycle TJ = 150 °C 10 1 TJ = 25 °C 0.1 40 30 20 EGP10A thru EGP10D EGP10F and EGP10G 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Leakage Current (μA) 50 10 EGP10A thru EGP10D EGP10F and EGP10G 0.01 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 100 TJ = 150 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 20 40 60 80 1 0.1 0.01 0.01 0 10 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-41 (DO-204AL) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. Revision: 06-Oct-2021 Document Number: 88582 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000