Not for New Designs
EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G
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Vishay General Semiconductor
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
50 V, 100 V, 150 V, 200 V, 300 V, 400 V
IFSM
150 A
MECHANICAL DATA
trr
50 ns
VF
0.96 V, 1.25 V
TJ max.
175 °C
Package
DO-201AD
Circuit configuration
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGP51A
EGP51B
EGP51C
EGP51D
EGP51F
EGP51G
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 138.8 °C
IF(AV)
5
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
TJ, TSTG
-65 to +175
°C
Operating and storage temperature range
Revision: 06-Oct-2021
Document Number: 87530
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
5.0 A
SYMBOL EGP51A EGP51B EGP51C EGP51D EGP51F EGP51G UNIT
VF (1)
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
TA = 125 °C
0.96
1.25
5.0
IR (2)
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
V
μA
50
50
ns
117
48
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width, ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP51A EGP51B EGP51C EGP51D EGP51F EGP51G UNIT
Typical thermal resistance
RθJA (1)(2)
55
RθJL (2)(3)
8.5
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R
D
J
θJA
(2) Thermal resistance R
θJA - junction to ambient, RθJL - junction to lead at 0.375" (9.5 mm) lead length (use DC test method)
(3) Device mounted on 30 mm x 30 mm PCB pad size areas.
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EGP51G-E3/C
1.21
C
1400
13" diameter paper tape and reel
EGP51G-E3/D
1.21
D
1000
Ammo pack packaging
6.0
6.0
EGP51A thru EGP51D
5.0
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.0
3.0
Copper Heatsinks
2.0
1.0
0.375" (9.5 mm)
Lead Length
0
0
25
50
D = 0.8
D = 0.5
5.0
D = 0.3
4.0
D = 0.2
D = 1.0
D = 0.1
3.0
2.0
T
1.0
D = tp/T
tp
0
75
100
125
150
175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 06-Oct-2021
Document Number: 87530
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G
www.vishay.com
Vishay General Semiconductor
Average Power Loss (W)
EGP51F thru EGP51G
Instantaneous Reverse Current (˩A)
6.0
D = 0.8
5.0
D = 0.5
D = 0.3
4.0
D = 1.0
D = 0.2
3.0
D = 0.1
2.0
T
1.0
D = tp/T
tp
0
0
1
2
3
4
5
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
6
10
Average Forward Current (A)
40
50
60
70
80
90
100
Fig. 6 - Typical Reverse Leakage Characteristics
1000
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
150
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
EGP51A thru EGP51D
EGP51F thru EGP51G
1
0
1
10
0.1
100
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current
TJ = 150 °C
10
TJ = 25 °C
0.1
EGP51A thru EGP51D
EGP51F thru EGP51G
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
1000
1.6
Fig. 7 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
1
1
Reverse Voltage (V)
Number of Cycles at 60 Hz
Instantaneous Forward Current (A)
30
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
Peak Forward Surge Current (A)
20
1.8
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.1
0.001
0.1
10
1000
t - Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance
Revision: 06-Oct-2021
Document Number: 87530
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not for New Designs
EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 06-Oct-2021
Document Number: 87530
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Document Number: 91000
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024
