ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
SMB (DO-214AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
300 V, 400 V
IFSM
50 A
trr
35 ns
VF at IF
1.1 V
TJ max.
150 °C
Package
DO-214AA (SMB)
Circuit configuration
Single
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
ES2F
ES2G
EF
EG
UNIT
Maximum repetitive peak reverse voltage
VRRM
300
400
V
Working peak reverse voltage
VRWM
225
300
V
Maximum RMS voltage
VRMS
210
280
V
Maximum average forward rectified current at TL = 110 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 22-Mar-18
Document Number: 88588
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
SYMBOL
TA = 25 °C
Maximum reverse current at VRRM
ES2F
VF (1)
2.0 A
UNIT
V
10
IR
TA = 100 °C
ES2G
1.1
µA
200
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
trr
50
ns
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
IRM
3.0
A
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
Qrr
50
nC
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance
ES2F
ES2G
RJA (1)
75
RJL (1)
25
UNIT
°C/W
Note
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES2G-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
ES2G-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
ES2GHE3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
ES2GHE3_A/I (1)
0.096
I
3200
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 22-Mar-18
Document Number: 88588
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
3.0
2.0
1.0
0
100
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
0.1
80
90
100
110
120
130
140
150
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
60
200
8.3 ms Single Half Sine-Wave
at TL = 110 °C
50
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Peak Forward Surge Current (A)
TJ = 150 °C
40
30
20
10
0
at 5 A, 50 A/µs
160
120
at 2 A, 20 A/µs
at 5 A, 50 A/µs
80
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
40
trr
Qrr
0
1
10
100
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Reverse Switching Characteristics
100
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.2
TJ = 25 °C
0.4
0.6
0.8
1
1.2
1.4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
1000
Revision: 22-Mar-18
Document Number: 88588
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 22-Mar-18
Document Number: 88588
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000