ES2F, ES2G
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Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
Available
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMB (DO-214AA)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
3D Models
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
300 V, 400 V
IFSM
50 A
trr
35 ns
VF at IF
1.1 V
TJ max.
150 °C
Package
SMB (DO-214AA)
Circuit configuration
Single
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
ES2F
ES2G
EF
EG
UNIT
Maximum repetitive peak reverse voltage
VRRM
300
400
V
Working peak reverse voltage
VRWM
225
300
V
Maximum RMS voltage
VRMS
210
280
Maximum average forward rectified current at TL = 110 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
V
Revision: 13-May-2020
Document Number: 88588
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
SYMBOL
ES2F
VF (1)
2.0 A
TA = 25 °C
Maximum reverse current at VRRM
UNIT
V
10
IR
TA = 100 °C
ES2G
1.1
µA
200
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
35
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM
trr
50
ns
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM
IRM
3.0
A
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM
Qrr
50
nC
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2G
75
RJL (1)
25
RJA
Maximum thermal resistance
ES2F
(1)
UNIT
°C/W
Note
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
(1)
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES2G-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
ES2G-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
ES2GHE3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
ES2GHE3_A/I (1)
0.096
I
3200
13" diameter plastic tape and reel
PREFERRED P/N
Note
(1) AEC-Q101 qualified
Revision: 13-May-2020
Document Number: 88588
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
2.0
1.0
TJ = 150 °C
100
TJ = 125 °C
TJ = 100 °C
10
1000
1st line
2nd line
2nd line
Instantaneous Reverse Current (μA)
Average Forward Rectified Current (A)
Resistive or Inductive Load
0
1
TJ = 25 °C
100
0.1
0.01
TJ = -40 °C
10
0.001
80
90
100
110
120
130
140
150
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
60
200
8.3 ms Single Half Sine-Wave
at TL = 110 °C
50
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Peak Forward Surge Current (A)
10000
1000
3.0
40
30
20
10
0
at 5 A, 50 A/µs
160
120
at 2 A, 20 A/µs
at 5 A, 50 A/µs
80
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
40
trr
Qrr
0
1
10
100
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Reverse Switching Characteristics
Axis Title
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
10
TJ = 125 °C
1000
TJ = 100 °C
1
100
TJ = 25 °C
0.1
TJ = -40 °C
0.01
Junction Capacitance (pF)
2nd line
Instantaneous Forward Current (A)
100
10000
100
10
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.1
1
10
100
1000
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 13-May-2020
Document Number: 88588
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 13-May-2020
Document Number: 88588
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000