ES3F, ES3G
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Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
Available
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMC (DO-214AB)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
300 V, 400 V
IFSM
100 A
trr
35 ns
VF at IF
1.1 V
TJ max.
150 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - haloge-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
ES3F
ES3G
EF
EG
UNIT
Maximum repetitive peak reverse voltage
VRRM
300
400
V
Working peak reverse voltage
VRWM
225
300
V
Maximum RMS voltage
VRMS
210
280
Maximum average forward rectified current at TL = 110 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
V
Revision: 05-Aug-2020
Document Number: 88590
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
SYMBOL
TA = 25 °C
Maximum DC reverse current at working
peak reverse voltage
ES3F
VF (1)
3.0 A
UNIT
V
10
IR
TA = 100 °C
ES3G
1.1
µA
350
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
trr
50
ns
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
IRM
3.0
A
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
Qrr
50
nC
Typical junction capacitance
4.0 V, 1 MHz
CJ
30
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
ES3F
ES3G
RJA (1)
50
RJL (1)
15
UNIT
°C/W
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES3G-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
ES3G-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
ES3GHE3_A/H (1)
0.211
H
850
7" diameter plastic tape and reel
ES3GHE3_A/I (1)
0.211
I
3500
13" diameter plastic tape and reel
ES3G-M3/57T
0.211
57T
850
7" diameter plastic tape and reel
ES3G-M3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
ES3GHM3_A/H (1)
0.211
H
850
7" diameter plastic tape and reel
ES3GHM3_A/I (1)
0.211
I
3500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 05-Aug-2020
Document Number: 88590
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
2.0
1.0
TJ = 150 °C
1000
TJ = 125 °C
100
1000
TJ = 100 °C
1st line
2nd line
Resistive or Inductive Load
2nd line
Instantaneous Reverse Current (µA)
Average Forward Rectified Current (A)
3.0
10
TJ = 25 °C
1
100
0.1
TJ = -40 °C
0.01
10
0.001
0
80
90
100
110
120
130
140
0
150
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
150
200
8.3 ms Single Half Sine-Wave
at TL = 110 °C
125
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Peak Forward Surge Current (A)
10000
10 000
100
75
50
25
0
at 5 A, 50 A/µs
160
120
at 2 A, 20 A/µs
80
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
40
trr
Qrr
0
1
25
100
10
50
75
100
125
150
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Reverse Switching Characteristics
175
Axis Title
10000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 125 °C
1000
TJ = 100 °C
1
TJ = 25 °C
100
0.1
TJ = -40 °C
10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Junction Capacitance (pF)
TJ = 150 °C
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
100
10
1
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 05-Aug-2020
Document Number: 88590
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES3F, ES3G
www.vishay.com
Vishay General Semiconductor
3.0
D = 0.5
D = 0.3
2.5
Average Power Loss (W)
D = 0.8
D = 0.2
2.0
D = 1.0
D = 0.1
1.5
T
1.0
0.5
D = tp/T
tp
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 05-Aug-2020
Document Number: 88590
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000