ESH1PD-E3/85A

ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP ® Series Available • Ideal for automated placement • Glass passivated pellet chip junction • Ultrafast recovery times for high frequency • Low forward voltage drop, low power loss • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C SMP (DO-220AA) • AEC-Q101 qualified Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in secondary rectification and freewheeling for ultrafast switching speeds of AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V IFSM 50 A trr 25 ns VF 0.90 V TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH1PB ESH1PC ESH1PD PB PC PD 100 150 200 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range Revision: 08-Mar-2022 Document Number: 88895 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.7 A Maximum instantaneous forward voltage SYMBOL VF (1) TJ = 25 °C IF = 1 A TJ = 25 °C Maximum reverse current at rated VR voltage IR (2) TJ = 125 °C Maximum reverse current VR = 20 V Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 150 °C Typical reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Typical stored charge IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz TJ = 25 °C TJ = 25 °C V 0.90 1.0 μA 25 IR 50 μA 25 ns 25 ns 35 Qrr TJ = 100 °C UNIT 0.86 trr trr TJ = 100 °C VALUE 10 nC 15 CJ 25 pF ESH1PC ESH1PD UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ESH1PB RθJA (1) 105 RθJM (2) 15 °C/W Notes (1) Thermal resistance from junction to ambient on free air (2) Mounted on 5 mm x 5 mm pad size from junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH1PB-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel ESH1PB-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel ESH1PBHM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel ESH1PBHM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel Note Automotive grade (1) Revision: 08-Mar-2022 Document Number: 88895 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 TJ = 175 °C 100 TJ = 150 °C 10 1000 TJ = 125 °C 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 1.0 1 0.1 100 TJ = 25 °C 0.01 TJ = -40 °C 10 0.001 0 95 105 115 125 135 145 155 165 175 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 1000 Junction Capacitance (pF) 50 Peak Forward Surge Current (A) 10000 1000 1.2 40 30 20 10 100 10 10 1 0.1 0 1 100 1 10 100 Number of Cycles at 50 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Axis Title 10000 10 TJ = 150 °C 1000 TJ = 125 °C 1 TJ = 25 °C 100 0.1 TJ = -40 °C 10 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Transient Thermal Impedance (°C/W) 1000 TJ = 175 °C 1st line 2nd line 2nd line Instantaneous Forward Current (A) 100 100 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Mar-2022 Document Number: 88895 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMP (DO-220AA) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) Mounting pad layout 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.025 0.030 (0.635) (0.762) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.050 (1.27) Revision: 08-Mar-2022 Document Number: 88895 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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