ESH2C-M3/5BT

ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.93 V TJ max. 175 °C Package SMB (DO-214AA) Circuit configuration Single Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH2B ESH2C ESH2D EHB EHC EHD UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V 100 150 200 Maximum DC blocking voltage VDC Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V Revision: 13-May-2020 Document Number: 89482 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage VALUE UNIT VF (1) 0.93 V TA = 25 °C Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time SYMBOL IF = 2 A IR TA = 125 °C IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr TJ = 25 °C Typical reverse recovery time IF = 2 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C Typical stored charge IF = 2 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 100 °C Typical junction capacitance 4.0 V, 1 MHz trr TJ = 25 °C Qrr CJ 2.0 µA 50 25 ns 35 ns 55 20 nC 35 30 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle  THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ESH2B ESH2C RJA (1) 65 RJL (1) 20 ESH2D UNIT °C/W Note Units mounted on PCB with 8.0 mm x 8.0 mm land areas (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel ESH2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel PREFERRED P/N Revision: 13-May-2020 Document Number: 89482 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 2.0 1.5 1.0 0.5 TJ = 175 °C 100 TJ = 150 °C 10 1000 TJ = 125 °C 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 2.5 1 0.1 100 TJ = 25 °C 0.01 TJ = -40 °C 10 0.001 0 0 25 50 75 100 125 150 20 175 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 60 100 50 Junction Capacitance (pF) Peak Forward Surge Current (A) 10000 1000 40 30 20 10 1 0.1 0 1 10 10 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Axis Title TJ = 175 °C 10 TJ = 150 °C 1000 TJ = 125 °C 1 TJ = 25 °C 100 0.1 TJ = -40 °C 0.01 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 10000 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 13-May-2020 Document Number: 89482 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH2B-M3, ESH2C-M3, ESH2D-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 13-May-2020 Document Number: 89482 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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