ESH3C-M3/57T

ESH3B-M3, ESH3C-M3, ESH3D-M3 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMC (DO-214AB) Cathode Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer, and automotive. 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 3.0 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.90 V TJ max. 175 °C Package SMC (DO-214AB) Circuit configuration Single Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH3B ESH3C ESH3D EHB EHC EHD Maximum repetitive peak reverse voltage VRMM 100 150 200 Maximum RMS voltage VRMS 70 105 140 100 150 200 Maximum DC blocking voltage VDC Maximum average forward rectified current (fig. 1) IF(AV) 3.0 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 TJ, TSTG -55 to +175 Operating junction and storage temperature range UNIT V A °C Revision: 08-Apr-2020 Document Number: 88461 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH3B-M3, ESH3C-M3, ESH3D-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE UNIT VF (1) 0.90 V IF = 3 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage IR TA = 125 °C Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr Typical reverse recovery time IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Typical stored charge IF = 3 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Typical junction capacitance 4.0 V, 1 MHz trr TJ = 100 °C Qrr TJ = 100 °C CJ 5.0 150 µA 25 40 ns 55 25 60 70 nC pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ESH3B ESH3C RθJA (1) 50 RθJL (1) 15 ESH3D UNIT °C/W Note Units mounted on PCB with 12.0 mm x 12.0 mm land areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH3D-M3/57T 0.211 57T 850 7" diameter plastic tape and reel ESH3D-M3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel Revision: 08-Apr-2020 Document Number: 88461 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH3B-M3, ESH3C-M3, ESH3D-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.5 2.0 1.5 1.0 0.5 100 TJ = 175 °C 10 TJ = 125 °C TJ = 150 °C 1000 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 3.0 1 TJ = 25 °C 100 0.1 TJ = -40 °C 0.01 10 0.001 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 1000 Junction Capacitance (pF) 125 Peak Forward Surge Current (A) 10000 1000 3.5 100 75 50 25 10 10 1 0.1 0 1 100 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance Axis Title TJ = 175 °C 10 TJ = 150 °C 1000 TJ = 125 °C 1 TJ = 25 °C 100 0.1 TJ = -40 °C 0.01 10 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 10000 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Apr-2020 Document Number: 88461 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ESH3B-M3, ESH3C-M3, ESH3D-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 08-Apr-2020 Document Number: 88461 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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