FEP16AT-E3/45

FEP16xT, FEPB16xT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES D2PAK (TO-263AB) TO-220AB • Power pack • Glass passivated pellet chip junction K • Ultrafast recovery time • Low switching losses, high efficiency 2 • High forward surge capability 1 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 FEP16xT • Solder dip 275 °C max. 10 s, per JESD 22-B106 for TO-220AB package FEPB16xT PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 2 K • AEC-Q101 qualified available HEATSINK - Automotive ordering code: base P/NHE3 for D2PAK (TO-263AB package) LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. PRIMARY CHARACTERISTICS IF(AV) 2 x 8.0 A VRRM 50 V to 600 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V MECHANICAL DATA TJ max. 150 °C Package TO-220AB, D2PAK (TO-263AB) Circuit configurations Common cathode Case: TO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS Maximum DC blocking voltage VDC Maximum average forward rectified current at TC = 100 °C IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating storage and temperature range TJ, TSTG -55 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V 100 150 200 300 400 500 600 V 35 70 105 140 210 280 350 420 V 50 100 150 200 300 400 500 600 V 16 200 A 125 A Revision: 13-Sep-2022 Document Number: 88596 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPB16xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode 8.0 A SYMBOL FEP 16AT VF (1) Maximum DC reverse current per diode at rated DC blocking voltage FEP 16BT FEP 16CT FEP 16DT FEP 16FT 0.95 FEP 16GT FEP 16HT 1.30 TC = 25 °C FEP 16JT 1.50 UNIT V 10 IR TC = 100 °C Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ μA 500 35 50 85 ns 60 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP FEPF FEPB UNIT RθJC 2.2 3.1 2.2 °C/W Typical thermal resistance from junction to case per diode ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB FEP16JT-E3/45 1.85 45 50/tube Tube TO-263AB FEPB16JT-E3/45 1.35 45 50/tube Tube TO-263AB FEPB16JT-E3/81 1.35 81 800/reel Tape and reel TO-220AB FEP16JTHE3/45 (1) 1.85 45 50/tube Tube TO-263AB FEPB16JTHE3_A/P (1) 1.35 P 50/tube Tube 1.35 I 800/reel Tape and reel TO-263AB PREFERRED P/N FEPB16JTHE3_A/I (1) DELIVERY MODE Note (1) AEC-Q101 qualified Revision: 13-Sep-2022 Document Number: 88596 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPB16xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 20 Instantaneous Reverse Leakage Current (μA) Average Forward Current (A) Resistive or Inductive Load 16 12 8 4 0 10 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 0 50 100 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 300 1000 TC = 100 °C 8.3 ms Single Half Sine-Wave 250 200 150 100 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 V to 400 V 500 V to 600 V Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 50 V to 400 V 500 V to 600 V 100 10 0 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 13-Sep-2022 Document Number: 88596 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPB16xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) TO-220AB 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 13-Sep-2022 Document Number: 88596 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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