FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
3
• Low thermal resistance
2
1
• High forward surge capability
TO-3P (TO-247AD)
PIN 1
PIN 2
PIN 3
CASE
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
50 V, 100 V, 150 V, 200 V, 300 V,
400 V, 500 V, 600 V
IFSM
300 A
MECHANICAL DATA
trr
35 ns, 50 ns
VF at IF = 15 A
0.95 V, 1.3 V, 1.5 V
TJ max.
150 °C
Package
TO-3P (TO-247AD)
Circuit configuration
Common cathode
Case: TO-3P (TO-247AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
350
420
V
50
100
150
200
300
400
500
600
V
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
at TC = 100 °C
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
300
A
TJ, TSTG
-55 to +150
°C/W
Operating storage and temperature range
Revision: 27-May-2020
Document Number: 88597
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST
SYMBOL
CONDITIONS
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse current at
rated DC blocking voltage
per diode
15.0 A
FEP
30AP
FEP
30BP
VF
TC = 25 °C
FEP
30CP
FEP
30DP
FEP
30FP
0.95
FEP
30GP
FEP
30HP
1.3
FEP
30JP
1.5
UNIT
V
10
IR
TC = 100 °C
Maximum reverse recovery time
per diode
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
μA
500
35
50
175
ns
145
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
RJC (1)
Typical thermal resistance per diode
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
1.0
UNIT
°C/W
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
TO-247AD
PREFERRED P/N
FEP30JP-E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
6.15
30
30/tube
Tube
Revision: 27-May-2020
Document Number: 88597
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
Instantaneous Reverse Current (μA)
36
Average Forward Current (A)
Resistive or Inductive Load
30
24
12
6
0
10
TJ = 100 °C
1
0.1
TJ = 25 °C
50
100
10
150
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
300
1000
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 125 °C
100
0.01
0
200
150
100
50
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
50 V to 400 V
500 V to 600 V
10
1
10
100
0.1
Number of Cycles at 60 Hz
100
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 125 °C
10
TJ = 25 °C
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Instantaneous Forward Current (A)
50 V to 200 V
300 V to 600 V
1.6
1.8
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 27-May-2020
Document Number: 88597
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3P (TO-247AD)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
Revision: 27-May-2020
Document Number: 88597
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000